Microwave device on coupled rectangular waveguide and T-ridge waveguide with septa for thermal processing of dielectric materials with losses

2005 ◽  
Author(s):  
V.A. Sosunov ◽  
A.A. Skvortsov ◽  
D.A. lovov
Keyword(s):  
Thermal Processing ◽  
Rectangular Waveguide ◽  
Dielectric Materials ◽  
Ridge Waveguide ◽  
Microwave Device

Rapid Thermal Processes for Future Nanometer MOS Devices

1998 ◽  
Vol 525 ◽  
Author(s):  
John R. Hauser
Keyword(s):  
Thermal Processing ◽  
Gate Dielectric ◽  
Rapid Thermal Processing ◽  
Dielectric Materials ◽  
Nanometer Scale ◽  
Thermal Processes ◽  
Contact Material ◽  
Mos Devices ◽  
Front End ◽  
Projected Changes

ABSTRACTScaling of MOS devices is projected to continue down to device dimensions of at least 50 nm. However, there are many potential roadblocks to achieving such dimensions and many standard materials and front-end processes which must be significantly changed to achieve these goals. The most important areas for change include (a) gate dielectric materials, (b) gate contact material, (c) source/drain contacting structure and (d) fundamental bulk CMOS structure. These projected changes are reviewed along with possible applications of rapid thermal processing to achieving future nanometer scale MOS devices.

Advanced Dram Cell Dielectric Films using Rapid Thermal Processing

1994 ◽  
Vol 342 ◽  
Author(s):  
Randhir P.S. Thakur ◽  
Viju K. Mathews ◽  
Pierre C. Fazan
Keyword(s):  
Silicon Nitride ◽  
Thermal Processing ◽  
Structural Characteristics ◽  
Rapid Thermal Processing ◽  
Random Access ◽  
Dielectric Materials ◽  
Nonlinear Dependence ◽  
Dielectric Films ◽  
Storage Node ◽  
Carrier Tunneling

ABSTRACTThe reliable operation of a dynamic random access memory (DRAM) device requires a minimum level of charge to be stored in the capacitor. The nonlinear dependence between the scaling of the minimum charge and the cell area for higher DRAM densities is the driving force in the development of exotic capacitor structures and advanced cell dielectric materials. The conventional option of reducing the thickness of the silicon nitride dielectric films for high density DRAM applications will eventually be constrained by the increase in the leakage current due to direct carrier tunneling or by the decrease in the oxidation resistance of the films.In this paper we discuss the use of rapid thermal processing to modify the interface between the polysilicon storage node of the capacitor and the silicon nitride to improve the electrical and structural characteristics without any loss in capacitance. The influence of electrode roughness on the electrical behavior will also be discussed for the various dielectric stack combinations.

Characterization of ferrimagnetic and dielectric materials with a rectangular waveguide—method, limits of validity

2005 ◽  
Vol 290-291 ◽  
pp. 90-93
Author(s):  
Chadi Nader ◽  
Bernard Bayard ◽  
Ali Siblini ◽  
Bruno Sauviac ◽  
Ahmad Jammal
Keyword(s):  
Rectangular Waveguide ◽  
Dielectric Materials ◽  
Waveguide Method

Measurement of Complex Permittivity of Materials Using a Double-Ridge Waveguide Resonator

2016 ◽  
Vol 723 ◽  
pp. 154-159
Author(s):  
En Li ◽  
Shu Ke Hao ◽  
Yun Peng Zhang ◽  
Yong Gao
Keyword(s):  
Complex Permittivity ◽  
Dielectric Material ◽  
Perturbation Technique ◽  
Dielectric Materials ◽  
Test System ◽  
Ridge Waveguide ◽  
Simulation Software ◽  
Experimental Result ◽  
Waveguide Resonator ◽  
Double Ridge

A double-ridge waveguide resonator loaded with rod like dielectric material was analyzed based on the electromagnetic simulation software HFSS and microwave resonant cavity perturbation technique in this paper. The perturbation method is used to calculate the complex permittivity of the material due to the change of the resonator's tiny change. The calculation expression of complex permittivity was deduced and proper test system was built for the validation at several specific frequencies, the resonant parameters of the cavity were measured by the external Agilent vector network analyzer, according to the calibration of standard quartz sample, the complex permittivity of the quartz, sapphire and PTFE samples were calculated. Experimental result showed that the method has a good performance for measuring the complex permittivity of low dielectric loss dielectric materials.

Certain Anomalies in the Analysis of Hyperbolic Heat Conduction

2001 ◽  
Vol 124 (2) ◽  
pp. 307-319 ◽  
Author(s):  
A. Haji-Sheikh ◽  
W. J. Minkowycz ◽  
E. M. Sparrow
Keyword(s):  
Heat Equation ◽  
Thermal Processing ◽  
Laser Heating ◽  
Temperature Drop ◽  
Dielectric Materials ◽  
Hyperbolic Heat Conduction ◽  
Series Solutions ◽  
Major Focus ◽  
Hyperbolic Heat Equation ◽  
Nonhomogeneous Materials

The hyperbolic diffusion equation is often used to analyze laser heating of dielectric materials and in thermal processing of nonhomogeneous materials. In this paper, anomalies in existing solutions of the hyperbolic heat equation are identified. In particular, the singularities associated with the interaction of a wave front and a boundary may cause a violation of the imposed boundary condition. This violation may give rise to physically unacceptable results such as a temperature drop due to heating or a temperature rise due to cooling. The development of appropriate remedies for these happenings is a major focus of this paper. In addition, the unique mathematical features of the hyperbolic heat equation are studied and set forth. Green’s function solutions for semi-infinite and infinite bodies are presented. For finite bodies, it is demonstrated that the relevant series solutions need special attention to accelerate their convergence and to deal with certain anomalies.

Sign in / Sign up

Export Citation Format

Share Document