Advanced Dram Cell Dielectric Films using Rapid Thermal Processing

1994 ◽  
Vol 342 ◽  
Author(s):  
Randhir P.S. Thakur ◽  
Viju K. Mathews ◽  
Pierre C. Fazan
Keyword(s):  
Silicon Nitride ◽  
Thermal Processing ◽  
Structural Characteristics ◽  
Rapid Thermal Processing ◽  
Random Access ◽  
Dielectric Materials ◽  
Nonlinear Dependence ◽  
Dielectric Films ◽  
Storage Node ◽  
Carrier Tunneling

ABSTRACTThe reliable operation of a dynamic random access memory (DRAM) device requires a minimum level of charge to be stored in the capacitor. The nonlinear dependence between the scaling of the minimum charge and the cell area for higher DRAM densities is the driving force in the development of exotic capacitor structures and advanced cell dielectric materials. The conventional option of reducing the thickness of the silicon nitride dielectric films for high density DRAM applications will eventually be constrained by the increase in the leakage current due to direct carrier tunneling or by the decrease in the oxidation resistance of the films.In this paper we discuss the use of rapid thermal processing to modify the interface between the polysilicon storage node of the capacitor and the silicon nitride to improve the electrical and structural characteristics without any loss in capacitance. The influence of electrode roughness on the electrical behavior will also be discussed for the various dielectric stack combinations.

In-Situ Multiprocessing of Ultrathin Silicon Nitride Capacitors for Advanced Dram Cells

1994 ◽  
Vol 342 ◽  
Author(s):  
Randhir P.S. Thakur ◽  
Rick Hawthorne ◽  
Viju K. Mathews ◽  
Pierre C. Fazan ◽  
Chris J. Werkhoven ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Thermal Processing ◽  
Dielectric Film ◽  
Rapid Thermal Processing ◽  
Dielectric Films ◽  
Free Interface ◽  
Interface Control ◽  
Structural And Electrical Properties ◽  
Cluster Tool

ABSTRACTUltrathin silicon nitride capacitors were fabricated using in-situ multiprocessing technology. In this paper we present comparative studies of capacitor formation using standard furnace processing, rapid thermal processing (RTP), and cluster tool processing of ONO dielectric films. We show that, due to better interface control using cluster tool processing, higher capacitance can be obtained for a fixed leakage level for the same thickness of dielectric film when compared to furnace and rapid thermal processing. We discuss the structural and electrical properties of these films and show that, due to an oxide-free interface, the improved film quality results in lower leakage current density and higher reliability.

Rapid Thermal Processes for Future Nanometer MOS Devices

1998 ◽  
Vol 525 ◽  
Author(s):  
John R. Hauser
Keyword(s):  
Thermal Processing ◽  
Gate Dielectric ◽  
Rapid Thermal Processing ◽  
Dielectric Materials ◽  
Nanometer Scale ◽  
Thermal Processes ◽  
Contact Material ◽  
Mos Devices ◽  
Front End ◽  
Projected Changes

ABSTRACTScaling of MOS devices is projected to continue down to device dimensions of at least 50 nm. However, there are many potential roadblocks to achieving such dimensions and many standard materials and front-end processes which must be significantly changed to achieve these goals. The most important areas for change include (a) gate dielectric materials, (b) gate contact material, (c) source/drain contacting structure and (d) fundamental bulk CMOS structure. These projected changes are reviewed along with possible applications of rapid thermal processing to achieving future nanometer scale MOS devices.

Nitrogen Enhanced Oxygen Precipitation in Czochralski Silicon Wafers Coated with Silicon Nitride Films

2011 ◽  
Vol 178-179 ◽  
pp. 249-252 ◽  
Author(s):  
Xiang Yang Ma ◽  
Li Ming Fu ◽  
De Ren Yang
Keyword(s):  
Silicon Nitride ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicon Wafers ◽  
Czochralski Silicon ◽  
Silicon Nitride Films ◽  
Oxygen Precipitation ◽  
Different Temperatures ◽  
Nitrogen Bonds ◽  
Sinx Film

Oxygen precipitation (OP) behaviors were investigated for Czochralski (Cz) silicon wafers, which were coated with silicon nitride (SiNx) films or not, subjected to two-step anneal of 800C/4 h+1000°C/16 h following rapid thermal processing (RTP) at different temperatures ranging from 1150 to 1250C for 50 s. It was found that OP in the Cz silicon wafers coated with SiNx films was stronger in each case. This was because that nitrogen atoms diffused into bulk of Cz silicon wafer from the surface coated SiNx film during the high temperature RTP. Furthermore, it was proved that the RTP lamp irradiation facilitated the in-diffusion of nitrogen atoms, which was most likely due to that the ultraviolet light enhanced the breakage of silicon-nitrogen bonds.

Oxidation Resistance of Ultrathin Silicon Nitride Passivation Layers on Si(100)

1997 ◽  
Vol 477 ◽  
Author(s):  
A. Kamath ◽  
B. Y. Kim ◽  
P. M. Blass ◽  
Y. M. Sun ◽  
J. M. White ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Oxidation Resistance ◽  
Photoelectron Spectroscopy ◽  
Thermal Processing ◽  
Oxidation Process ◽  
Rapid Thermal Processing ◽  
Tantalum Pentoxide ◽  
Process Window ◽  
X Ray ◽  
Passivation Layers

ABSTRACTThe oxidation resistance of ultrathin (5–15Å) thermally grown silicon nitride (Si3N4), in conditions relevant to the deposition/annealing of Tantalum Pentoxide (Ta2O5) in a Rapid Thermal Processing (RTP) environment, has been non destructively examined using X-Ray Photoelectron Spectroscopy (XPS). This has been carried out with a view to establishing a process window for the deposition of Ta2O5 on a Rapid Thermally Nitrided (RTN) Si(100) surface, with negligible oxidation of the Si(100) substrate. A physical model of the oxidation process of these films is also proposed.

Silicon Oxynitride and Oxide-Nitride-Oxide Gate Dielectrics by Combined Plasma-Rapid Thermal Processing

1994 ◽  
Vol 342 ◽  
Author(s):  
Y. Ma ◽  
S.V. Hattangady ◽  
T. Yasuda ◽  
H. Niimi ◽  
S. Gandhi ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Silicon Oxide ◽  
Gate Dielectric ◽  
Rapid Thermal Processing ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Dielectric Films ◽  
Mos Capacitor ◽  
Nitride Oxide

ABSTRACTWe have used a combination of plasma and rapid thermal processing for the formation of thin gate-dielectric films. The bulk dielectric films investigated include silicon oxide, oxynitride and multilayer oxide-nitride-oxide heterostructures formed by plasma-assisted oxidation, remoteplasma-enhanced chemical-vapor deposition (remote-PECVD) followed by post-deposition rapid thermal annealing (RTA). Auger electron spectroscopy (AES) and infrared absorption spectroscopy (IR) have been used to study the chemistry of interface formation and the bulk dielectric chemical bonding, respectively. Electrical characterization of MOS capacitor structures incorporating these dielectrics was performed by conventional capacitance and current voltage techniques, C-V and I-V, respectively.

LPCVD of Silicon Nitride from Dichlorosilane and Ammonia by Single Wafer Rapid Thermal Processing

2001 ◽  
Vol 4 (5) ◽  
pp. F11 ◽  
Author(s):  
Dana Teasdale ◽  
Yoshihide Senzaki ◽  
Robert Herring ◽  
Gary Hoeye ◽  
Lawrence Page ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Thermal Processing ◽  
Rapid Thermal Processing

ChemInform Abstract: LPCVD of Silicon Nitride from Dichlorosilane and Ammonia by Single Wafer Rapid Thermal Processing.

ChemInform ◽  
2010 ◽  
Vol 32 (30) ◽  
pp. no-no
Author(s):  
Dana Teasdale ◽  
Yoshihide Senzaki ◽  
Robert Herring ◽  
Gary Hoeye ◽  
Lawrence Page ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Thermal Processing ◽  
Rapid Thermal Processing

Material and Electrical Properties of Gate Dielectrics Grown by Rapid Thermal Processing

1985 ◽  
Vol 52 ◽  
Author(s):  
J. Nulman ◽  
J. P. Krusius ◽  
P. Renteln
Keyword(s):  
Silicon Dioxide ◽  
Thermal Processing ◽  
Material Characterization ◽  
Gate Dielectrics ◽  
Rapid Thermal Processing ◽  
Pure Oxygen ◽  
Dielectric Films ◽  
Electrical Characteristics ◽  
Current Voltage ◽  
Capacitance Voltage

ABSTRACTThe material and electrical characteristics of silicon dielectric films prepared via Rapid Thermal Processing (RTP) are described. A commercial RTP system with heat provided by tungsten-halogen lamps was used. Silicon dioxide films were grown in pure oxygen and in oxygen with 4% hydrogen chloride ambients. As grown films were either annealed in a nitrogen ambient or nitrided in an ammonia ambient. Film thickness ranges from 4 to 70 nm for RTP times from 0 to 300 s at 1150 C. Current-voltage and capacitance-voltage methods were used for electrical characteristics. Ellipsometry, Auger and TEM were used for material characterization.

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