E-beam mechanics and net connectivity for interlayer short detection: DI: Defect inspection and reduction

Author(s):  
Peter Lin ◽  
Na Cai ◽  
Sangkee Eah ◽  
Oliver D. Patterson ◽  
Weihong Gao
Author(s):  
Mike Santana ◽  
Alfredo V. Herrera

Abstract This paper describes a methodology for correlating physical defect inspection/navigation systems with electrical bitmap data through the fabrication of artificial defects via reticle alterations or circuit modifications using an inline FIB. The methodology chosen consisted of altering decommissioned reticles to create defects resulting in both open and shorted circuits within areas of an AMD microprocessor cache. The reticles were subsequently scanned using a KLA SL300HR StarLight inspection system to confirm their location, while wafers processed on these reticles were scanned at several layers using standard inline metrology. Finally, the wafers were electrically tested, bitmapped, and physically deprocessed. All defect data was then analyzed and cross-correlated between each system, uncovering some important system deficiencies and learning opportunities. Data and images are included to support the significance and effectiveness of such a methodology.


Author(s):  
Oliver D. Patterson ◽  
Deborah A. Ryan ◽  
Xiaohu Tang ◽  
Shuen Cheng Lei

Abstract In-line E-beam inspection may be used for rapid generation of failure analysis (FA) results for low yielding test structures. This approach provides a number of advantages: 1) It is much earlier than traditional FA, 2) de-processing isn’t required, and 3) a high volume of sites can be processed with the additional support of an in-line FIB. Both physical defect detection and voltage contrast inspection modes are useful for this application. Voltage contrast mode is necessary for isolation of buried defects and is the preferred approach for opens, because it is faster. Physical defect detection mode is generally necessary to locate shorts. The considerations in applying these inspection modes for rapid failure analysis are discussed in the context of two examples: one that lends itself to physical defect inspection and the other, more appropriately addressed with voltage contrast inspection.


Author(s):  
C. Monachon ◽  
M.S. Zielinski ◽  
D. Gachet ◽  
S. Sonderegger ◽  
S. Muckenhirn ◽  
...  

Abstract Quantitative cathodoluminescence (CL) microscopy is a new optical spectroscopy technique that measures electron beam-induced optical emission over large field of view with a spatial resolution close to that of a scanning electron microscope (SEM). Correlation of surface morphology (SE contrast) with spectrally resolved and highly material composition sensitive CL emission opens a new pathway in non-destructive failure and defect analysis at the nanometer scale. Here we present application of a modern CL microscope in defect and homogeneity metrology, as well as failure analysis in semiconducting electronic materials


Author(s):  
Tian Qiu ◽  
Zhiquan Lin ◽  
Chen Jung Tsai ◽  
Chi Shing Wong ◽  
Xin Zhang ◽  
...  

Sensors ◽  
2021 ◽  
Vol 21 (13) ◽  
pp. 4292
Author(s):  
Horng-Horng Lin ◽  
Harshad Kumar Dandage ◽  
Keh-Moh Lin ◽  
You-Teh Lin ◽  
Yeou-Jiunn Chen

Solar cells may possess defects during the manufacturing process in photovoltaic (PV) industries. To precisely evaluate the effectiveness of solar PV modules, manufacturing defects are required to be identified. Conventional defect inspection in industries mainly depends on manual defect inspection by highly skilled inspectors, which may still give inconsistent, subjective identification results. In order to automatize the visual defect inspection process, an automatic cell segmentation technique and a convolutional neural network (CNN)-based defect detection system with pseudo-colorization of defects is designed in this paper. High-resolution Electroluminescence (EL) images of single-crystalline silicon (sc-Si) solar PV modules are used in our study for the detection of defects and their quality inspection. Firstly, an automatic cell segmentation methodology is developed to extract cells from an EL image. Secondly, defect detection can be actualized by CNN-based defect detector and can be visualized with pseudo-colors. We used contour tracing to accurately localize the panel region and a probabilistic Hough transform to identify gridlines and busbars on the extracted panel region for cell segmentation. A cell-based defect identification system was developed using state-of-the-art deep learning in CNNs. The detected defects are imposed with pseudo-colors for enhancing defect visualization using K-means clustering. Our automatic cell segmentation methodology can segment cells from an EL image in about 2.71 s. The average segmentation errors along the x-direction and y-direction are only 1.6 pixels and 1.4 pixels, respectively. The defect detection approach on segmented cells achieves 99.8% accuracy. Along with defect detection, the defect regions on a cell are furnished with pseudo-colors to enhance the visualization.


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