A VDD independent temperature sensor circuit with scaled CMOS process

2009 ◽  
Author(s):  
H. Oshiyama ◽  
T. Matsuda ◽  
K. Suzuki ◽  
H. Iwata ◽  
T. Ohzone
Keyword(s):  
Temperature Sensor ◽  
Cmos Process ◽  
Scaled Cmos

A High-Speed Temperature Sensor with Low Supply Sensitivity for SoC Thermal Monitoring

2018 ◽  
Vol 27 (07) ◽  
pp. 1850116
Author(s):  
Yuanxin Bao ◽  
Wenyuan Li
Keyword(s):  
Temperature Sensor ◽  
Conversion Rate ◽  
High Speed ◽  
Supply Voltage ◽  
Ring Oscillator ◽  
Temperature Sensitive ◽  
Cmos Process ◽  
Digital Code ◽  
Thermal Monitoring ◽  
Worst Case

A high-speed low-supply-sensitivity temperature sensor is presented for thermal monitoring of system on a chip (SoC). The proposed sensor transforms the temperature to complementary to absolute temperature (CTAT) frequency and then into digital code. A CTAT voltage reference supplies a temperature-sensitive ring oscillator, which enhances temperature sensitivity and conversion rate. To reduce the supply sensitivity, an operational amplifier with a unity gain for power supply is proposed. A frequency-to-digital converter with piecewise linear fitting is used to convert the frequency into the digital code corresponding to temperature and correct nonlinearity. These additional characteristics are distinct from the conventional oscillator-based temperature sensors. The sensor is fabricated in a 180[Formula: see text]nm CMOS process and occupies a small area of 0.048[Formula: see text]mm2 excluding bondpads. After a one-point calibration, the sensor achieves an inaccuracy of [Formula: see text][Formula: see text]1.5[Formula: see text]C from [Formula: see text]45[Formula: see text]C to 85[Formula: see text]C under a supply voltage of 1.4–2.4[Formula: see text]V showing a worst-case supply sensitivity of 0.5[Formula: see text]C/V. The sensor maintains a high conversion rate of 45[Formula: see text]KS/s with a fine resolution of 0.25[Formula: see text]C/LSB, which is suitable for SoC thermal monitoring. Under a supply voltage of 1.8[Formula: see text]V, the maximum energy consumption per conversion is only 7.8[Formula: see text]nJ at [Formula: see text]45[Formula: see text]C.

scholarly journals Silicon photonic temperature sensor
employing a ring resonator manufactured
using a standard CMOS process

2010 ◽  
Vol 18 (21) ◽  
pp. 22215 ◽  
Author(s):  
Gun-Duk Kim ◽  
Hak-Soon Lee ◽  
Chang-Hyun Park ◽  
Sang-Shin Lee ◽  
Boo Tak Lim ◽  
...  
Keyword(s):  
Temperature Sensor ◽  
Ring Resonator ◽  
Cmos Process ◽  
Standard Cmos Process ◽  
Silicon Photonic

A CMOS Temperature Sensor with a Maximum Accuracy of 1.6 °C after One-Point Calibration

2013 ◽  
Vol 336-338 ◽  
pp. 216-220
Author(s):  
Chun Chi Chen ◽  
Keng Chih Liu ◽  
Shih Hao Lin
Keyword(s):  
Temperature Sensor ◽  
Pulse Generator ◽  
Circuit Complexity ◽  
Absolute Temperature ◽  
Cmos Process ◽  
Chip Area ◽  
Test Cost Reduction ◽  
Linear Delay ◽  
Time Amplifier ◽  
Fine Resolution

This paper presents a time-domain CMOS oscillator-based temperature sensor with one-point calibration for test cost reduction. Compared with the former CMOS sensors with linear delay lines, the proposed work composed of a temperature-to-pulse generator with adjustable time gain and a time-to-digital converter (TDC) can achieve lower circuit complexity and smaller area. A temperature-dependent oscillator for temperature sensing was used to generate the period width proportional to absolute temperature (PTAT). With the help of calibration circuit, an adjustable-gain time amplifier was adopted to dynamically adjust the amplified width that was converted by the TDC into the corresponding digital code. After calibration, the fluctuation of the sensor output with process variation can be greatly reduced. The maximum inaccuracy after one-point calibration for six package chips was 1.6 °C within a 0 80 °C temperature range. The proposed sensor fabricated in a 0.35-μm CMOS process occupied a chip area of merely 0.07 mm2, achieved a fine resolution of 0.047 °C/LSB, and consumed a low power of 25 μW@10 samples/s.

Design and Fabrication of a Temperature Sensor Based on Thermopile in CMOS Technology

2003 ◽  
Author(s):  
Ioana Voiculescu ◽  
Mona Zaghloul ◽  
R. Andrew McGill
Keyword(s):  
Temperature Sensor ◽  
Silicon Oxide ◽  
Mechanical Stability ◽  
Cmos Technology ◽  
Nitride Layer ◽  
Design Parameters ◽  
Cmos Process ◽  
Post Processing ◽  
Test Chip ◽  
Optimal Geometry

This paper describes a new geometry for integrated micromachined thermopile structures. Different arrangements for the thermocouples in proximity to the heating element are examined, to optimize the accuracy of the temperature measurement. Several design parameters including thermopile lengths, and the number of thermocouples, are examined. The test chip was designed and fabricated in CMOS technology, including the appropriate opening for post-processing micromachining. The thermopile used was fabricated with polysilicon/aluminum contacts on a silicon oxide/nitride layer provided by the CMOS process. Different microbeam and bridge membrane support structures were designed for the thermopile, in order to investigate the optimal geometry for mechanical stability and to avoid structure buckling.

scholarly journals A CMOS-Thyristor Based Temperature Sensor with +0.37 °C/−0.32 °C Inaccuracy

Micromachines ◽  
2020 ◽  
Vol 11 (2) ◽  
pp. 124 ◽  
Author(s):  
Jing Li ◽  
Yuyu Lin ◽  
Siyuan Ye ◽  
Kejun Wu ◽  
Ning Ning ◽  
...  
Keyword(s):  
Power Consumption ◽  
Temperature Sensor ◽  
Current Source ◽  
Average Power ◽  
Bias Current ◽  
Cmos Process ◽  
Linear Temperature ◽  
Temperature Characteristics ◽  
Period Ratio ◽  
Average Power Consumption

This paper describes a voltage controlled oscillator (VCO) based temperature sensor. The VCOs are composed of complementary metal–oxide–semiconductor (CMOS) thyristor with the advantage of low power consumption. The period of the VCO is temperature dependent and is function of the transistors’ threshold voltage and bias current. To obtain linear temperature characteristics, this paper constructed the period ratio between two different-type VCOs. The period ratio is independent of the temperature characteristics from current source, which makes the bias current generator simplified. The temperature sensor was designed in 130 nm CMOS process and it occupies an active area of 0.06 mm2. Based on the post-layout simulation results, after a first-order fit, the sensor achieves an inaccuracy of +0.37/−0.32 °C from 0 °C to 80 °C, while the average power consumption of the sensor at room temperature is 156 nW.

A Silicon Semiconductor Temperature Sensor Applied for RFID Tag

2014 ◽  
Vol 1082 ◽  
pp. 541-546
Author(s):  
Hui Chen ◽  
Wei Ping Jing ◽  
Shao Qing Huang
Keyword(s):  
Temperature Sensor ◽  
Temperature Characteristic ◽  
Cmos Process ◽  
Linear Temperature ◽  
Ultra Low Power ◽  
Analog To Digital ◽  
Rfid Tag ◽  
Temperature Signal ◽  
Average Current ◽  
Current Dissipation

A new type of silicon semiconductor temperature sensor applied for RFID tag chip is designed based on the linear temperature characteristic of base-emitter voltage of parasitic substrate PNP transistor. A novel switched capacitor integrator based on positive-negative synchronous integration is introduced to amplify the weak temperature signal precisely and provide a method to represent the temperature in analog domain. Temperature quantization is accomplished by a 12-bit ultra-low-power successive approximation analog-to-digital converter providing a resolution of 0.03125°C/LSB. The circuit was simulated by using device model of 0.18-μm CMOS process. The output integration swing is 2VPP and the average current dissipation is 38.91μA at 1.8V supply. The sensor achieves an accuracy of -0.1°C to +0.33°C in the temperature range of -39°C to 89°C.

An Untrimmed BJT-Based Temperature Sensor With Dynamic Current-Gain Compensation in 55-nm CMOS Process

2019 ◽  
Vol 66 (10) ◽  
pp. 1613-1617
Author(s):  
Zhong Tang ◽  
Yun Fang ◽  
Zhenyan Huang ◽  
Xiao-Peng Yu ◽  
Zheng Shi ◽  
...  
Keyword(s):  
Temperature Sensor ◽  
Current Gain ◽  
Cmos Process ◽  
Gain Compensation
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