Large, Electric-Field Induced Tunable and Reversible χ(2) in PZT Thin Films for on-chip second-order nonlinearities

This paper presents a new application of (Ba, Sr)TiO3(BST) and Pb(Zr, Ti)O3 (PZT) thin films in anti-fuse and their resulting anti-fuse behaviors. Compared with amorphous silicon, BST and PZT anti-fuses demonstrate distinct advantages: lower on-state resistance and lower breakdown electric field. With the sandwich-like structure of Pt/Ferroelectric Ceramics/Pt, the devices exhibit an apparent anti-fuse behavior. The resistivity of BST structure switches from 6.7 MΩ to 12.3 Ω at the average breakdown electric field of 0.3 MV/cm, while the PZT structure switches from 106 MΩ to 10.7 Ω at the average breakdown electric field of 1.3 MV/cm. Finally, the prospect of using BST and PZT is discussed and suggestions for their improvements are proposed.

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Properties of Piezoelectric Pzt Thin Films for Microactuator Applications

MRS Proceedings ◽

10.1557/proc-360-429 ◽

1994 ◽

Vol 360 ◽

Cited By ~ 12

Author(s):

D. Damjanovic ◽

K. G. Brooks ◽

A. Kholkin ◽

M. Kohli ◽

T. Maeder ◽

...

Keyword(s):

Thin Films ◽

Dielectric Permittivity ◽

Electric Field ◽

Lead Zirconate Titanate ◽

Piezoelectric Properties ◽

Lead Zirconate ◽

Piezoelectric Response ◽

Silicon Substrates ◽

Pzt Thin Films ◽

Geometrical Constraints

AbstractThe piezoelectric properties of lead zirconate titanate (PZT) thin films deposited on thick silicon substrates and thin silicon membranes were investigated using optical interferometry. The effect of the geometrical constraints and clamping effects on the piezoelectric response is discussed. The study of the dielectric permittivity and the loss as a function of the amplitude of the alternating electric field reveals that extrinsic contributions to the dielectric permittivity become active at large fields. The DC electric field has the effect of freezing out the extrinsic contributions. The influence of the dielectric loss on the piezoelectric properties is discussed.

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CORONA-POLED NONLINEAR POLYMERIC FILMS: IN SITU ELECTRIC FIELD MEASUREMENT, CHARACTERIZATION AND ULTRASHORT-PULSE APPLICATIONS

Journal of Nonlinear Optical Physics & Materials ◽

10.1142/s0218199192000054 ◽

1992 ◽

Vol 01 (01) ◽

pp. 73-102 ◽

Cited By ~ 26

Author(s):

A. KNOESEN ◽

N.E. MOLAU ◽

D.R. YANKELEVICH ◽

M.A. MORTAZAVI ◽

A. DIENES

Keyword(s):

Thin Films ◽

Electric Field ◽

Ultrashort Pulse ◽

Elevated Temperatures ◽

Orientational Order ◽

Ultrashort Pulses ◽

Second Order ◽

Polymeric Films ◽

Polymeric Thin Films ◽

Corona Poling

Electric poling at field intensities approaching the dielectric strength of the film is possible with corona poling. Polymeric thin films with large second-order nonlinearities can be created with this poling technique. In this paper, the corona poling of nonlinear polymeric films at elevated temperatures, processing, characterization and possible ultrashort-pulse applications are reviewed. An experimental technique is presented to measure the electric field during poling of the nonlinear polymeric film. The characterization of orientational order in corona-poled nonlinear polymeric films and the effects associated with the large electric field during poling are discussed. Poled polymeric thin films are uniquely suited for second-order nonlinear optical applications of ultrashort pulses (< 50 fsec) since minimal pulse spreading occurs. The sum-frequency ultrashort-pulse application of nonlinear polymeric thin films and limitations of the thin polymeric films are discussed. Experimental results are presented of a side-chain nonlinear polymer that is ideally suited for ultrashort-pulse applications.

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