A Novel Anti-Fuse Based on (Ba, Sr)TiO3(BST) and Pb(Zr, Ti)O3 (PZT) Thin Films

2012 ◽  
Vol 187 ◽  
pp. 231-234
Author(s):  
Qian Ying Tang ◽  
Yuan Liu ◽  
Ya Fan He ◽  
Ping Li ◽  
Xiao Dong Xie ◽  
...  
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Amorphous Silicon ◽  
Ferroelectric Ceramics ◽  
Pzt Thin Films ◽  
Breakdown Electric Field ◽  
State Resistance

This paper presents a new application of (Ba, Sr)TiO3(BST) and Pb(Zr, Ti)O3 (PZT) thin films in anti-fuse and their resulting anti-fuse behaviors. Compared with amorphous silicon, BST and PZT anti-fuses demonstrate distinct advantages: lower on-state resistance and lower breakdown electric field. With the sandwich-like structure of Pt/Ferroelectric Ceramics/Pt, the devices exhibit an apparent anti-fuse behavior. The resistivity of BST structure switches from 6.7 MΩ to 12.3 Ω at the average breakdown electric field of 0.3 MV/cm, while the PZT structure switches from 106 MΩ to 10.7 Ω at the average breakdown electric field of 1.3 MV/cm. Finally, the prospect of using BST and PZT is discussed and suggestions for their improvements are proposed.

scholarly journals Large, Electric-Field Induced Tunable and Reversible χ(2) in PZT Thin Films for on-chip second-order nonlinearities

2021 ◽  
Author(s):  
Gilles F. Feutmba ◽  
Artur Hermans ◽  
John P. George ◽  
Irfan Ansari ◽  
Dries Van Thourhout ◽  
...  
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Second Order ◽  
Pzt Thin Films ◽  
Large Electric Field ◽  
On Chip

Directional Field Aided Lateral Crystallization of Amorphous Silicon Thin Films

2001 ◽  
Vol 664 ◽  
Author(s):  
Marek A. T. Izmajlowicz ◽  
Neil A. Morrison ◽  
Andrew J. Flewitt ◽  
William I. Milne
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Electric Field ◽  
Amorphous Silicon ◽  
Solid Phase ◽  
Excimer Laser Annealing ◽  
Solid Phase Crystallization ◽  
Metal Induced Crystallization ◽  
Silicon Thin Films ◽  
Induced Crystallization

ABSTRACTFor application to active matrix liquid crystal displays (AMLCDs), a low temperature (< 600 °C) process for the production of polycrystalline silicon is required to permit the use of inexpensive glass substrates. This would allow the integration of drive electronics onto the display panel. Current low temperature processes include excimer laser annealing, which requires expensive equipment, and solid phase crystallization, which requires high temperatures. It is known that by adding small amounts of metals such as nickel to the amorphous silicon the solid phase crystallization temperature can be significantly reduced. The rate of this solid phase metal induced crystallization is increased in the presence of an electric field. Previous work on field aided crystallization has reported crystal growth that either proceeds towards the positive terminal or is independent of the direction of the electric field. In this work, extensive investigation has consistently revealed directional crystallization, from the positive to the negative terminal, of amorphous silicon thin films during heat treatment in the presence of an electric field. This is the first time that this phenomenon has been reported. Models have been proposed for metal induced crystallization with and without an applied electric field in which a reaction between Ni and Si to produce NiSi is the rate-limiting step. The crystallization rate is increased in the presence of an electric field through the drift of positive Ni ions.

Temperature Dependent Current-Voltage Characteristics in Thin SiO2 Films

1989 ◽  
Vol 159 ◽  
Author(s):  
Jin Zhao ◽  
N. M. Ravindra
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Temperature Dependent ◽  
Sio2 Films ◽  
Breakdown Electric Field ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Nordheim Tunneling

ABSTRACTAn analysis of the Fowler-Nordheim tunneling (FNT) theory and its application to temperature dependent current-voltage characteristics, of very thin films of SiO2 on silicon, is presented. The final results are believed to provide the most complete examination of FN emission theory and predict the breakdown electric field in thin SiO2 films. The role of the roughness, at the Si-SiO2 interface, in determining the FNT current in these structures is also discussed.

scholarly journals Properties of Piezoelectric Pzt Thin Films for Microactuator Applications

1994 ◽  
Vol 360 ◽  
Author(s):  
D. Damjanovic ◽  
K. G. Brooks ◽  
A. Kholkin ◽  
M. Kohli ◽  
T. Maeder ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Permittivity ◽  
Electric Field ◽  
Lead Zirconate Titanate ◽  
Piezoelectric Properties ◽  
Lead Zirconate ◽  
Piezoelectric Response ◽  
Silicon Substrates ◽  
Pzt Thin Films ◽  
Geometrical Constraints

AbstractThe piezoelectric properties of lead zirconate titanate (PZT) thin films deposited on thick silicon substrates and thin silicon membranes were investigated using optical interferometry. The effect of the geometrical constraints and clamping effects on the piezoelectric response is discussed. The study of the dielectric permittivity and the loss as a function of the amplitude of the alternating electric field reveals that extrinsic contributions to the dielectric permittivity become active at large fields. The DC electric field has the effect of freezing out the extrinsic contributions. The influence of the dielectric loss on the piezoelectric properties is discussed.

Modeling of Hysteresis Properties of Lead Zirconate Titanate Thin Films

1991 ◽  
Vol 243 ◽  
Author(s):  
In K. Yoo ◽  
Seshu B. Desu
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Lead Zirconate ◽  
Ferroelectric Ceramics ◽  
Internal Electric Field ◽  
Polarization Reversal ◽  
Pzt Thin Films ◽  
Zirconate Titanate ◽  
Reversal Mechanism ◽  
Hysteresis Properties

AbstractIt is proposed that the polarization reversal mechanism in ferroelectric ceramics such as titanates is controlled by nucleation, growth, merging and shrinkage of ferroelectric domains. These domain phenomena are in turn determined by the nature of Barkhausen jumps, internal electric field, and dielectric relaxation times of the dipoles. Based on the proposed polarization reversal mechanism, a quantitative model was developed for simulating the hysteresis properties of lead zirconate titanate (PZT) thin films. The simulated hysteresis loops are in good agreement with the experimental results.It was observed that dielectric viscosity, which is very useful in understanding fatigue and aging behavior of PZT thin films, is one of the key parameters that controls the hysteresis properties.

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