A comparative study of GaAs/AlGaAs quantum well infrared photodetectors grown by molecular beam epitaxy and metal organic vapour phase epitaxy

2002 ◽  
Author(s):  
M.B. Johnston ◽  
L.V. Dao ◽  
M. Gal ◽  
N.E. Lumpkin ◽  
R.G. Clark ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Comparative Study ◽  
Molecular Beam ◽  
Vapour Phase ◽  
Infrared Photodetectors ◽  
Vapour Phase Epitaxy ◽  
Quantum Well Infrared Photodetectors ◽  
Metal Organic ◽  
Organic Vapour

The Influence of Substrate Polarity on the Blue Emission from As-doped GaN Layers Grown by Molecular Beam Epitaxy

2003 ◽  
Vol 798 ◽  
Author(s):  
S. V. Novikov ◽  
L. X. Zhao ◽  
C. T. Foxon ◽  
I. Harrison ◽  
R. P. Campion ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Blue Emission ◽  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
Sample Orientation ◽  
Metal Organic ◽  
Organic Vapour ◽  
Strong Blue Emission ◽  
Influence Of Substrate

ABSTRACTThe influence of sample orientation and polarity on the blue emission from As-doped GaN layers grown by plasma-assisted molecular beam epitaxy (PA-MBE) was investigated. Arsenic doped GaN layers were grown under identical PA-MBE conditions on several types of substrates including c-plane (0001) sapphire and polar and non-polar GaN templates grown by metal-organic vapour phase epitaxy (MOVPE). Non-polar GaN MOVPE templates were grown on aplane (11–20) sapphire and LiAlO2 (100). The orientation and polarity have a strong influence on the morphology and the optical properties of As-doped GaN layers. Strong blue emission from As-doped GaN was observed only in the case of (000–1) oriented N-polarity layers.

scholarly journals The influence of quantum well and barrier thicknesses on photoluminescence spectra of InGaAs/AlInAs superlattices grown by LP-MOVPE

2020 ◽  
Vol 50 (2) ◽  
Author(s):  
Adriana Łozińska ◽  
Mikołaj Badura ◽  
Katarzyna Bielak ◽  
Beata Ściana ◽  
Marek Tłaczała
Keyword(s):  
Quantum Well ◽  
Vapour Phase ◽  
Semiconductor Heterostructures ◽  
Photoluminescence Spectra ◽  
Vapour Phase Epitaxy ◽  
Line Energy ◽  
Metal Organic ◽  
Organic Vapour ◽  
Non Destructive ◽  
Lattice Matched

In the presented work, the influence of the quantum well and barrier thicknesses on optical characteristics of InGaAs/AlInAs superlattices was reported. Six different structures of In0.53Ga0.47As/Al0.48In0.52As superlattices lattice-matched to InP were grown by low pressure metal organic vapour phase epitaxy (LP-MOVPE). Optical properties of the obtained structures were examined by means of photoluminescence spectroscopy. This technique allows quick, simple and non-destructive measurements of radiative optical transitions in different semiconductor heterostructures. The analysis of recorded photoluminescence spectra revealed the influence of the quantum well and barrier thicknesses on the emission line energy.

Structural and photoconducting properties of MBE and MOCVD grown III-nitride double-heterostructures

2008 ◽  
Vol 1076 ◽  
Author(s):  
Sindy Hauguth-Frank ◽  
Vadim Lebedev ◽  
Katja Tonisch ◽  
Henry Romanus ◽  
Thomas Kups ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Structural Properties ◽  
Molecular Beam ◽  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
Group Iii ◽  
Measurement Systems ◽  
Double Heterostructures ◽  
Metal Organic ◽  
Organic Vapour

ABSTRACTInvestigations on standing wave (SW) interferometry come in focus of interest in the course of ongoing miniaturization of high precision length measurement systems. A key problem within these efforts is the development of a transparent ultra-thin photodetector for sampling the intensity profile of the generated SW. Group III-materials are promising candidates to ensure a good photodetector performance combined with the required optical transparency. In this work, we report on the interrelation of strain and dislocation density along with the influence of the structural properties on the sensitivity of double-heterostructure III-nitride photodetectors grown by molecular beam and metal organic vapour phase epitaxy.

Misfit dislocations in green-emitting InGaN/GaN quantum well structures

2005 ◽  
Vol 892 ◽  
Author(s):  
Pedro MFJ Costa ◽  
Ranjan Datta ◽  
Menno J Kappers ◽  
Mary E Vickers ◽  
Colin J Humphreys
Keyword(s):  
Quantum Well ◽  
Strain Relaxation ◽  
Vapour Phase ◽  
Misfit Dislocations ◽  
Single Quantum Well ◽  
Vapour Phase Epitaxy ◽  
Quantum Well Structures ◽  
Transmission Electron ◽  
Metal Organic ◽  
Organic Vapour

AbstractMisfit dislocations (MDs) have been observed using transmission electron microscopy (TEM) in InGaN/GaN quantum well (MQW) structures grown under different metal-organic vapour phase epitaxy (MOVPE) regimes and with In-contents equal to or higher than 20%. These dislocations are even observed in a single quantum well 3 nm thick with an In-content of 22%. Conversely, no MDs were observed in QW structures with an In-content of 16%. The presence of MDs in the QW stack leads to strain relaxation which has been confirmed in the indium-rich structures by high resolution X-ray diffraction (HRXRD).

Sign in / Sign up

Export Citation Format

Share Document