Near room temperature electrical injection lasing for dilute nitride Ga(NAsP)/GaP quantum-well structures grown by metal organic vapour phase epitaxy

2006 ◽  
Vol 42 (10) ◽  
pp. 601 ◽  
Author(s):  
B. Kunert ◽  
A. Klehr ◽  
S. Reinhard ◽  
K. Volz ◽  
W. Stolz
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Vapour Phase ◽  
Dilute Nitride ◽  
Vapour Phase Epitaxy ◽  
Quantum Well Structures ◽  
Metal Organic ◽  
Organic Vapour ◽  
Electrical Injection

Misfit dislocations in green-emitting InGaN/GaN quantum well structures

2005 ◽  
Vol 892 ◽  
Author(s):  
Pedro MFJ Costa ◽  
Ranjan Datta ◽  
Menno J Kappers ◽  
Mary E Vickers ◽  
Colin J Humphreys
Keyword(s):  
Quantum Well ◽  
Strain Relaxation ◽  
Vapour Phase ◽  
Misfit Dislocations ◽  
Single Quantum Well ◽  
Vapour Phase Epitaxy ◽  
Quantum Well Structures ◽  
Transmission Electron ◽  
Metal Organic ◽  
Organic Vapour

AbstractMisfit dislocations (MDs) have been observed using transmission electron microscopy (TEM) in InGaN/GaN quantum well (MQW) structures grown under different metal-organic vapour phase epitaxy (MOVPE) regimes and with In-contents equal to or higher than 20%. These dislocations are even observed in a single quantum well 3 nm thick with an In-content of 22%. Conversely, no MDs were observed in QW structures with an In-content of 16%. The presence of MDs in the QW stack leads to strain relaxation which has been confirmed in the indium-rich structures by high resolution X-ray diffraction (HRXRD).

scholarly journals Aluminium incorporation in polar, semi- and non-polar AlGaN layers: a comparative study of x-ray diffraction and optical properties

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Duc V. Dinh ◽  
Nan Hu ◽  
Yoshio Honda ◽  
Hiroshi Amano ◽  
Markus Pristovsek
Keyword(s):  
Room Temperature ◽  
Optical Emission ◽  
Vapour Phase ◽  
Optical Data ◽  
Bandgap Energy ◽  
X Ray Diffraction ◽  
Vapour Phase Epitaxy ◽  
X Ray ◽  
Metal Organic ◽  
Organic Vapour

Abstract Growth of AlxGa1−xN layers (0 ≤ x ≤ 1) simultaneously on polar (0001), semipolar ($$10\bar{{\rm{1}}}$$ 10 1 ¯ 3) and ($$11\bar{{\rm{2}}}2$$ 11 2 ¯ 2 ), as well as nonpolar ($$10\bar{{\rm{1}}}0$$ 10 1 ¯ 0 ) and ($$11\bar{{\rm{2}}}0$$ 11 2 ¯ 0 ) AlN templates, which were grown on planar sapphire substrates, has been investigated by metal-organic vapour phase epitaxy. By taking into account anisotropic in-plane strain of semi- and non-polar layers, their aluminium incorporation has been determined by x-ray diffraction analysis. Optical emission energy of the layers was obtained from room-temperature photoluminescence spectra, and their effective bandgap energy was estimated from room-temperature pseudo-dielectric functions. Both x-ray diffraction and optical data consistently show that aluminium incorporation is comparable on the polar, semi- and non-polar planes.

scholarly journals The influence of quantum well and barrier thicknesses on photoluminescence spectra of InGaAs/AlInAs superlattices grown by LP-MOVPE

2020 ◽  
Vol 50 (2) ◽  
Author(s):  
Adriana Łozińska ◽  
Mikołaj Badura ◽  
Katarzyna Bielak ◽  
Beata Ściana ◽  
Marek Tłaczała
Keyword(s):  
Quantum Well ◽  
Vapour Phase ◽  
Semiconductor Heterostructures ◽  
Photoluminescence Spectra ◽  
Vapour Phase Epitaxy ◽  
Line Energy ◽  
Metal Organic ◽  
Organic Vapour ◽  
Non Destructive ◽  
Lattice Matched

In the presented work, the influence of the quantum well and barrier thicknesses on optical characteristics of InGaAs/AlInAs superlattices was reported. Six different structures of In0.53Ga0.47As/Al0.48In0.52As superlattices lattice-matched to InP were grown by low pressure metal organic vapour phase epitaxy (LP-MOVPE). Optical properties of the obtained structures were examined by means of photoluminescence spectroscopy. This technique allows quick, simple and non-destructive measurements of radiative optical transitions in different semiconductor heterostructures. The analysis of recorded photoluminescence spectra revealed the influence of the quantum well and barrier thicknesses on the emission line energy.

ZnSe metal organic vapour-phase epitaxy on GaAs: substrate preparation as the limiting factor in ZnSe growth

1998 ◽  
Vol 184-185 ◽  
pp. 1338 ◽  
Author(s):  
D.N. Gnoth ◽  
T.L. Ng ◽  
I.B. Poole ◽  
D.A. Evans ◽  
N. Maung ◽  
...  
Keyword(s):  
Gaas Substrate ◽  
Vapour Phase ◽  
Limiting Factor ◽  
Substrate Preparation ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour

EXCITON AND BIEXCITON PHENOMENA IN ZINC SULPHIDE EPILAYERS

1996 ◽  
Vol 05 (04) ◽  
pp. 621-629 ◽  
Author(s):  
J. VALENTA ◽  
D. GUENNANI ◽  
A. MANAR ◽  
P. GILLIOT
Keyword(s):  
Optical Gain ◽  
Vapour Phase ◽  
Zinc Sulphide ◽  
Detailed Characterization ◽  
Vapour Phase Epitaxy ◽  
Nanosecond Lasers ◽  
Metal Organic ◽  
Organic Vapour ◽  
Linear Optical Properties

The detailed characterization of metal organic vapour phase epitaxy grown ZnS layers on GaAs is the first step towards the study of their different non-linear optical properties performed with nanosecond lasers. Biexciton phenomena (with a binding energy of about 10 meV) are observed in photoluminescence-excitation and optical-gain spectra.

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