Misfit dislocations in green-emitting InGaN/GaN quantum well structures

2005 ◽  
Vol 892 ◽  
Author(s):  
Pedro MFJ Costa ◽  
Ranjan Datta ◽  
Menno J Kappers ◽  
Mary E Vickers ◽  
Colin J Humphreys
Keyword(s):  
Quantum Well ◽  
Strain Relaxation ◽  
Vapour Phase ◽  
Misfit Dislocations ◽  
Single Quantum Well ◽  
Vapour Phase Epitaxy ◽  
Quantum Well Structures ◽  
Transmission Electron ◽  
Metal Organic ◽  
Organic Vapour

AbstractMisfit dislocations (MDs) have been observed using transmission electron microscopy (TEM) in InGaN/GaN quantum well (MQW) structures grown under different metal-organic vapour phase epitaxy (MOVPE) regimes and with In-contents equal to or higher than 20%. These dislocations are even observed in a single quantum well 3 nm thick with an In-content of 22%. Conversely, no MDs were observed in QW structures with an In-content of 16%. The presence of MDs in the QW stack leads to strain relaxation which has been confirmed in the indium-rich structures by high resolution X-ray diffraction (HRXRD).

scholarly journals The influence of quantum well and barrier thicknesses on photoluminescence spectra of InGaAs/AlInAs superlattices grown by LP-MOVPE

2020 ◽  
Vol 50 (2) ◽  
Author(s):  
Adriana Łozińska ◽  
Mikołaj Badura ◽  
Katarzyna Bielak ◽  
Beata Ściana ◽  
Marek Tłaczała
Keyword(s):  
Quantum Well ◽  
Vapour Phase ◽  
Semiconductor Heterostructures ◽  
Photoluminescence Spectra ◽  
Vapour Phase Epitaxy ◽  
Line Energy ◽  
Metal Organic ◽  
Organic Vapour ◽  
Non Destructive ◽  
Lattice Matched

In the presented work, the influence of the quantum well and barrier thicknesses on optical characteristics of InGaAs/AlInAs superlattices was reported. Six different structures of In0.53Ga0.47As/Al0.48In0.52As superlattices lattice-matched to InP were grown by low pressure metal organic vapour phase epitaxy (LP-MOVPE). Optical properties of the obtained structures were examined by means of photoluminescence spectroscopy. This technique allows quick, simple and non-destructive measurements of radiative optical transitions in different semiconductor heterostructures. The analysis of recorded photoluminescence spectra revealed the influence of the quantum well and barrier thicknesses on the emission line energy.

Time-resolved photoluminescence study of InGaAs–GaAs single heterostructures

1991 ◽  
Vol 69 (3-4) ◽  
pp. 456-460
Author(s):  
R. Leonelli ◽  
D. Morris ◽  
J. L. Brebner ◽  
Duan Jiaqi ◽  
A. P. Roth ◽  
...  
Keyword(s):  
Vapour Phase ◽  
Misfit Dislocations ◽  
Time Resolved ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour ◽  
Excitonic Emission ◽  
Photoluminescence Studies ◽  
Time Resolved Photoluminescence

We report the results of time-resolved photoluminescence studies of the near band-gap emission from relaxed, nonpseudomorphic In0.06Ga0.94As layers grown by metal-organic vapour-phase epitaxy on GaAs substrates oriented exactly on the (001) plane and misoriented by 2° off (001) towards <110>. The layer grown on the misoriented substrate shows a narrow excitonic emission whose lifetime of 1.2 ns is indicative of the high quality of the material. The emission from the layer grown on the oriented substrate consists of four bands. Their time-resolved spectra indicate that they can be attributed to excitons bound to different distributions of levels located either in homogeneous, strain-free regions or in regions near the epilayer misfit dislocations. We also present evidence indicating that hydrogen is more readily incorporated in layers grown on oriented substrates.

scholarly journals Determination of the dislocation densities in GaN on c-oriented sapphire

1996 ◽  
Vol 1 ◽  
Author(s):  
A. Pelzmann ◽  
M. Mayer ◽  
C. Kirchner ◽  
D. Sowada ◽  
T. Rotter ◽  
...  
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
X Ray ◽  
Gas Source ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Metal Organic ◽  
Organic Vapour

We report on a comprehensive study of the defect structure in GaN grown on c-oriented sapphire by gas source molecular beam epitaxy and metal organic vapour phase epitaxy. Transmission electron microscopy is used to investigate the defect structures which are dominated by threading dislocations perpendicular to the sapphire surface and stacking faults. Additionally, dislocation densities are determined. For determination of dislocation densities by x-ray diffraction we employ a model that uses the linewidth of x-ray rocking curves for this purpose. Finally, Rutherford backscattering spectrometry is performed to complement the structural investigation.

Simultaneous TEM and Cathodoluminescence Imaging of Non Uniformity in In0.1Ga0.9N Quantum Wells

2002 ◽  
Vol 743 ◽  
Author(s):  
Nicholas M. Boyall ◽  
Ken Durose ◽  
Ian M. Watson
Keyword(s):  
Quantum Wells ◽  
Vapour Phase ◽  
Scanning Transmission Electron Microscope ◽  
Vapour Phase Epitaxy ◽  
Spatially Resolved ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Metal Organic ◽  
Organic Vapour ◽  
Cathodoluminescence Imaging

ABSTRACTMonochromatic cathodoluminescence (CL) imaging of metal-organic vapour phase epitaxy (MOVPE) grown In0.1Ga0.9N single quantum wells (QW) has been performed in a scanning transmission electron microscope (STEM). Spatially resolved fluctuations in the CL emission wavelength and intensity of the QW luminescence were recorded. The presence of regions with luminescent features asymmetrically distributed either side of the QW peak emission was inferred. These fluctuations may be attributed to, by for example, variations of ±0.01 in the In fraction of the In0.1Ga0.9N alloy, to changes of up to 0.6nm in the QW thickness. However these factors do not explain the gross fluctuations in QW emission intensity observed in TEM-CL on the scale of ∼1μm.

ZnSe metal organic vapour-phase epitaxy on GaAs: substrate preparation as the limiting factor in ZnSe growth

1998 ◽  
Vol 184-185 ◽  
pp. 1338 ◽  
Author(s):  
D.N. Gnoth ◽  
T.L. Ng ◽  
I.B. Poole ◽  
D.A. Evans ◽  
N. Maung ◽  
...  
Keyword(s):  
Gaas Substrate ◽  
Vapour Phase ◽  
Limiting Factor ◽  
Substrate Preparation ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour

EXCITON AND BIEXCITON PHENOMENA IN ZINC SULPHIDE EPILAYERS

1996 ◽  
Vol 05 (04) ◽  
pp. 621-629 ◽  
Author(s):  
J. VALENTA ◽  
D. GUENNANI ◽  
A. MANAR ◽  
P. GILLIOT
Keyword(s):  
Optical Gain ◽  
Vapour Phase ◽  
Zinc Sulphide ◽  
Detailed Characterization ◽  
Vapour Phase Epitaxy ◽  
Nanosecond Lasers ◽  
Metal Organic ◽  
Organic Vapour ◽  
Linear Optical Properties

The detailed characterization of metal organic vapour phase epitaxy grown ZnS layers on GaAs is the first step towards the study of their different non-linear optical properties performed with nanosecond lasers. Biexciton phenomena (with a binding energy of about 10 meV) are observed in photoluminescence-excitation and optical-gain spectra.

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