Characterization and Modeling of Ceramic Capacitor Losses under Large Signal Operating Conditions

Author(s):  
Samantha Coday ◽  
Christopher B. Barth ◽  
Robert C.N. Pilawa-Podgurski
Energies ◽  
2021 ◽  
Vol 14 (23) ◽  
pp. 7904
Author(s):  
Muhammad Saad ◽  
Yongfeng Ju ◽  
Husan Ali ◽  
Sami Ullah Jan ◽  
Dawar Awan ◽  
...  

The remarkable progress of power electronic converters (PEC) technology has led to their increased penetration in distributed energy systems (DES). Particularly, the direct current (dc) nanogrid-based DES embody a variety of sources and loads, connected through a central dc bus. Therefore, PECs are required to be employed as an interface. It would facilitate incorporation of the renewable energy sources and battery storage system into dc nanogrids. However, it is more challenging as the integration of multiple modules may cause instabilities in the overall system dynamics. Future dc nanogrids are envisioned to deploy ready-to-use commercial PEC, for which designers have no insight into their dynamic behavior. Furthermore, the high variability of the operating conditions constitute a new paradigm in dc nanogrids. It exacerbates the dynamic analysis using traditional techniques. Therefore, the current work proposes behavioral modeling to perform system level analysis of a dc nanogrid-based DES. It relies only on the data acquired via measurements performed at the input–output terminals only. To verify the accuracy of the model, large signal disturbances are applied. The matching of results for the switch model and its behavioral model verifies the effectiveness of the proposed model.


2012 ◽  
Vol 2012 ◽  
pp. 1-11 ◽  
Author(s):  
Danqiong Hou ◽  
Griff L. Bilbro ◽  
Robert J. Trew

We have developed a new, zone-based compact physics-based AlGaN/GaN heterojunction field-effect transistor (HFET) model suitable for use in commercial harmonic-balance microwave circuit simulators. The new model is programmed in Verilog-A, an industry-standard compact modeling language. The new model permits the dc, small-signal, and large-signal RF performance for the transistor to be determined as a function of the device geometric structure and design features, material composition parameters, and dc and RF operating conditions. The new physics-based HFET model does not require extensive parameter extraction to determine model element values, as commonly employed for traditional equivalent-circuit-based transistor models. The new model has been calibrated and verified. We report very good agreement between simulated and measured dc and RF performance of an experimental C-band microwave power amplifier.


1948 ◽  
Vol 26f (8) ◽  
pp. 340-346
Author(s):  
Hugh A. Watson

A graphical means of design and gain calculation for cathode coupled amplifiers is described. The method, based on data supplied by the plate characteristic curves of the tube, can be used to advantage in predicting the performance of the amplifier and in determining the zero signal operating conditions.


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