A Study Of Charge Control In n- And p-type Lattice Matched And Strained Channel MODFETs With GaAs And InP Substrates

2005 ◽  
Author(s):  
M.D. Jaffe ◽  
Y. Sekiguchi ◽  
J. Singh ◽  
Y.J. Chan ◽  
D. Pavlidis ◽  
...  
Keyword(s):  
Charge Control ◽  
P Type ◽  
Type Lattice ◽  
Inp Substrates ◽  
Lattice Matched

P-type interface charge control layers for enabling GaN/SiC separate absorption and multiplication avalanche photodiodes

2012 ◽  
Vol 101 (9) ◽  
pp. 093506 ◽  
Author(s):  
A. V. Sampath ◽  
Q. G. Zhou ◽  
R. W. Enck ◽  
D. McIntosh ◽  
H. Shen ◽  
...  
Keyword(s):  
Avalanche Photodiodes ◽  
Charge Control ◽  
Interface Charge ◽  
P Type

GalnAsSb Materials for Thermophotovoltaics

1996 ◽  
Vol 450 ◽  
Author(s):  
C. A. Wang ◽  
G. W. Turner ◽  
M. J. Manfra ◽  
H. K. Choi ◽  
D. L. Spears
Keyword(s):  
Room Temperature ◽  
Molecular Beam ◽  
Hole Concentration ◽  
Organometallic Vapor Phase Epitaxy ◽  
Room Temperature Photoluminescence ◽  
P Type ◽  
First Time ◽  
Lattice Matched ◽  
Comparable Quality ◽  
Peak Emission

ABSTRACTGai1−xInxASySb1-y (0.06 < x < 0.18, 0.05 < y < 0.14) epilayers were grown lattice-matched to GaSb substrates by low-pressure organometallic vapor phase epitaxy (OMVPE) using triethylgallium, trimethylindium, tertiarybutylarsine, and trimethylantimony. These epilayers have a mirror-like surface morphology, and exhibit room temperature photoluminescence (PL) with peak emission wavelengths (λP,300K) out to 2.4 μm. 4K PL spectra have a full width at half-maximum of 11 meV or less for λP,4K < 2.1 μm (λP,300K = 2.3 μm). Nominally undoped layers are p-type with typical 300K hole concentration of 9 × 1015 cm−3 and mobility ∼ 450 to 580 cm2/V-s for layers grown at 575°C. Doping studies are reported for the first time for GalnAsSb layers doped n type with diethyltellurium and p type with dimethylzinc. Test diodes of p-GalnAsSb/n-GaSb have an ideality factor that ranges from 1.1 to 1.3. A comparison of electrical, optical, and structural properties of epilayers grown by molecular beam epitaxy indicates OMVPE-grown layers are of comparable quality.

scholarly journals Darstellung und Struktur ternärer Silizide und Germanide des Lithiums mit den Seltenen Erden Y und Gd im Fe2P-Typ / Preparation and Crystal Structure of Ternary Silicides and Germanides of Lithium with the Rare-Earth-Metals Y and Gd in the Fe2P-Type Structure

1979 ◽  
Vol 34 (8) ◽  
pp. 1057-1058 ◽  
Author(s):  
Axel Czybulka ◽  
Günter Steinberg ◽  
Hans-Uwe Schuster
Keyword(s):  
Crystal Structure ◽  
Rare Earth ◽  
Crystal Structures ◽  
Rare Earth Metals ◽  
Type Structure ◽  
Space Group ◽  
X Ray ◽  
P Type ◽  
Type Lattice ◽  
The Rare Earth

In the systems Li-M-X = (M = Y, Gd; X = Si, Ge) the compounds LiYSi, LiYGe and LiGdGe were prepared. Their crystal structures were determined by X-ray investigations. They crystallize hexagonally (space group P 6̄2m), and a C22-(Fe2P-type) lattice was found

scholarly journals Anomalous Stranski-Krastanov growth of (111)-oriented quantum dots with tunable wetting layer thickness

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Christopher F. Schuck ◽  
Simon K. Roy ◽  
Trent Garrett ◽  
Qing Yuan ◽  
Ying Wang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Self Assembly ◽  
Tensile Strain ◽  
Quantum Systems ◽  
Growth Mode ◽  
Wetting Layer ◽  
Precise Control ◽  
Growth Regime ◽  
Inp Substrates ◽  
Lattice Matched

AbstractDriven by tensile strain, GaAs quantum dots (QDs) self-assemble on In0.52Al0.48As(111)A surfaces lattice-matched to InP substrates. In this study, we show that the tensile-strained self-assembly process for these GaAs(111)A QDs unexpectedly deviates from the well-known Stranski-Krastanov (SK) growth mode. Traditionally, QDs formed via the SK growth mode form on top of a flat wetting layer (WL) whose thickness is fixed. The inability to tune WL thickness has inhibited researchers’ attempts to fully control QD-WL interactions in these hybrid 0D-2D quantum systems. In contrast, using microscopy, spectroscopy, and computational modeling, we demonstrate that for GaAs(111)A QDs, we can continually increase WL thickness with increasing GaAs deposition, even after the tensile-strained QDs (TSQDs) have begun to form. This anomalous SK behavior enables simultaneous tuning of both TSQD size and WL thickness. No such departure from the canonical SK growth regime has been reported previously. As such, we can now modify QD-WL interactions, with future benefits that include more precise control of TSQD band structure for infrared optoelectronics and quantum optics applications.

Dislocation density after S-diffusion into p-type InP substrates

1990 ◽  
Author(s):  
M. Faur ◽  
I. Weinberg ◽  
M. Faur ◽  
C. Goradia ◽  
R. Clark
Keyword(s):  
Dislocation Density ◽  
P Type ◽  
Inp Substrates

High reflectivity 1.55 μm (Al)GaAsSb/AlAsSb Bragg reflector lattice matched on InP substrates

1995 ◽  
Vol 66 (4) ◽  
pp. 442-444 ◽  
Author(s):  
B. Lambert ◽  
Y. Toudic ◽  
Y. Rouillard ◽  
M. Gauneau ◽  
M. Baudet ◽  
...  
Keyword(s):  
Bragg Reflector ◽  
High Reflectivity ◽  
Inp Substrates ◽  
Lattice Matched
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