A Physical Current Model for Multi-Finger Gate Tunneling FET with Schottky Junction

2020 ◽  
Author(s):  
Yimei Li ◽  
Jin Luo ◽  
Qianqian Huang ◽  
Xia An ◽  
Le Ye ◽  
...  
Keyword(s):  
Current Model ◽  
Schottky Junction ◽  
Tunneling Fet ◽  
Gate Tunneling

An analytical gate tunneling current model for MOSFETs

2012 ◽  
Vol 46 (3) ◽  
pp. 386-390 ◽  
Author(s):  
Iman Abaspur Kazerouni ◽  
Seyed Ebrahim Hosseini
Keyword(s):  
Current Model ◽  
Tunneling Current ◽  
Gate Tunneling

Gate Tunneling Current Model of Scaled Strained Si n-MOSFET with Drain Induced Barrier Lowering Effects

2017 ◽  
Vol 12 (7) ◽  
pp. 724-730
Author(s):  
Zhao Zhichao ◽  
Wu Tiefeng ◽  
Li Jing ◽  
Wang Quan ◽  
Han Wanglong
Keyword(s):  
Current Model ◽  
Tunneling Current ◽  
Strained Si ◽  
Gate Tunneling

Asymmetric dual-gate tunneling FET with improved performance

2016 ◽  
Vol 91 ◽  
pp. 216-224 ◽  
Author(s):  
Ying Wang ◽  
Yan-fu Wang ◽  
Wei Xue ◽  
Fei Cao
Keyword(s):  
Tunneling Fet ◽  
Dual Gate ◽  
Gate Tunneling ◽  
Improved Performance

MODELING GATE CURRENT FOR NANO SCALE MOSFET WITH DIFFERENT GATE SPACER

2011 ◽  
Vol 20 (08) ◽  
pp. 1659-1675 ◽  
Author(s):  
ASHWANI K. RANA ◽  
NAROTTAM CHAND ◽  
VINOD KAPOOR
Keyword(s):  
Leakage Current ◽  
Scale Effects ◽  
Current Model ◽  
Tunneling Current ◽  
Oxide Semiconductor ◽  
Experimental Result ◽  
Gate Leakage ◽  
Gate Current ◽  
Nano Scale ◽  
Gate Tunneling

Dimensions of metal–oxide–semiconductor field effect transistor (MOSFET) have been scaled down for decades to maintain the performance. So, as a result of aggressive scaling, gate oxide thickness approaches its manufacturing and physically limiting value of less than 2 nm in nano regime. Under such circumstances, gate leakage (tunneling) current has become a critical problem in nano domain as compared to subthreshold leakage current. Consequently, accurate quantitative understanding of gate tunneling leakage current is very important especially in context of low power VLSI application. In this work, gate tunneling currents have been modeled including the inevitable nano scale effects for a MOSFET having different high-k dielectric spacer such as SiO2 , Si3N4 , Al2O3 , HfO2 . The gate current model is compared and contrasted with santaurus simulation results and reported experimental result to verify the accuracy of the model. The agreement found was good, thus validating the developed analytical model. It is observed that neglecting nano scale effects may lead to large error in the calculated gate current. It is found in the results that gate leakage current decreases with the increase of dielectric constant of the gate spacer. Further, it is also reported that the spacer materials impact the threshold voltage, on current, off current, drain induced barrier lowering, and subthreshold slope of the device.

An Accurate Analytical Current Model of Double-gate Heterojunction Tunneling FET

2017 ◽  
Vol 64 (3) ◽  
pp. 938-944 ◽  
Author(s):  
Yunhe Guan ◽  
Zunchao Li ◽  
Wenhao Zhang ◽  
Yefei Zhang
Keyword(s):  
Current Model ◽  
Double Gate ◽  
Tunneling Fet
Sign in / Sign up

Export Citation Format

Share Document