Analysis of Double Gate Tunneling FET characteristics for low power designs Suppression

2nd International conference on Innovative Engineering Technologies (ICIET'2015) August 7-8, 2015 Bangkok (Thailand) ◽

10.15242/iie.e0815005 ◽

2015 ◽

Keyword(s):

Low Power ◽

Double Gate ◽

Tunneling Fet ◽

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Numerical Corrections to Estimate Depletion Region Width in Pseudo-two-dimensional Model of Double-Gate Tunneling FET

10.1109/niles53778.2021.9600561 ◽

2021 ◽

Author(s):

Muhammad Elgamal ◽

Ahmed Shaker

Keyword(s):

Depletion Region ◽

Double Gate ◽

Two Dimensional ◽

Dimensional Model ◽

Tunneling Fet ◽

Two Dimensional Model ◽

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Double-gate tunneling FET with asymmetric gate structure and pocket source

2014 IEEE International Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2014.7061238 ◽

2014 ◽

Author(s):

Dan Li ◽

Haijun Lou ◽

Xinnan Lin ◽

Lining Zhang ◽

Mansun Chan

Keyword(s):

Double Gate ◽

Tunneling Fet ◽

Gate Structure ◽

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A compact two-dimensional analytical model of the electrical characteristics of a triple-material double-gate tunneling FET structure

Journal of Semiconductors ◽

10.1088/1674-4926/40/12/122901 ◽

2019 ◽

Vol 40 (12) ◽

pp. 122901

Author(s):

C. Usha ◽

P. Vimala

Keyword(s):

Analytical Model ◽

Double Gate ◽

Two Dimensional ◽

Electrical Characteristics ◽

Tunneling Fet ◽

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Design and Optimization of Heterostructure Double Gate Tunneling Field Effect Transistor for Ultra Low Power Circuit and System

Electrical and Electronic Devices, Circuits, and Materials ◽

10.1002/9781119755104.ch2 ◽

2021 ◽

pp. 19-36

Author(s):

Guenifi Naima ◽

Shiromani Balmukund Rahi

Keyword(s):

Low Power ◽

Field Effect ◽

Field Effect Transistor ◽

Double Gate ◽

Power Circuit ◽

Ultra Low Power ◽

Design And Optimization ◽

Effect Transistor ◽

Circuit And System ◽

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Numerical study on effects of random dopant fluctuation in double gate tunneling FET

2013 IEEE International Conference of Electron Devices and Solid-state Circuits ◽

10.1109/edssc.2013.6628040 ◽

2013 ◽

Author(s):

Ying Zhu ◽

Yun Ye ◽

Yu Cao ◽

Jin He ◽

Aixi Zhang ◽

...

Keyword(s):

Numerical Study ◽

Double Gate ◽

Random Dopant Fluctuation ◽

Tunneling Fet ◽

Gate Tunneling ◽

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Suppression of Ambipolar Current and Analysis of RF Performance in Double Gate Tunneling Field Effect Transistors for Low-Power Applications

International Journal of Nanoparticles and Nanotechnology ◽

10.35840/2631-5084/5533 ◽

2020 ◽

Vol 6 (1) ◽

Author(s):

Guenifi N ◽

Rahi SB ◽

Larbi M

Keyword(s):

Low Power ◽

Field Effect ◽

Field Effect Transistors ◽

Double Gate ◽

Tunneling Field Effect Transistors ◽

Ambipolar Current ◽

Gate Tunneling ◽

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The impact of device parameter variation on double gate tunneling FET and double gate MOSFET

2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) ◽

10.1109/edssc.2010.5713698 ◽

2010 ◽

Author(s):

Lining Zhang ◽

Mansun Chan ◽

Frank He

Keyword(s):

Parameter Variation ◽

Double Gate ◽

Tunneling Fet ◽

Device Parameter ◽

Double Gate Mosfet ◽

Gate Tunneling ◽

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A Double-Gate Tunneling Field-Effect Transistor with Silicon-Germanium Source for High-Performance, Low Standby Power, and Low Power Technology Applications

10.7567/ssdm.2007.b-9-5 ◽

2007 ◽

Author(s):

Eng-Huat Toh ◽

Grace Huiqi Wang ◽

Lap Chan ◽

Dennis Sylvester ◽

Chun-Huat Heng ◽

...

Keyword(s):

Low Power ◽

Silicon Germanium ◽

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Double Gate ◽

Technology Applications ◽

Standby Power ◽

Effect Transistor ◽

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Double-gate fully-depleted SOI transistors for low-power high-performance nano-scale circuit design

ISLPED'01: Proceedings of the 2001 International Symposium on Low Power Electronics and Design (IEEE Cat. No.01TH8581) ◽

10.1145/383082.383136 ◽

2001 ◽

Author(s):

Rongtian Zhang ◽

Kaushik Roy ◽

David Janes

Keyword(s):

Low Power ◽

Circuit Design ◽

High Performance ◽

Double Gate ◽

Fully Depleted ◽

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Resonant gate tunneling current in double-gate SOI: a simulation study

IEEE Transactions on Electron Devices ◽

10.1109/ted.2003.920126 ◽

2003 ◽

Vol 50 (12) ◽

pp. 2579-2581 ◽

Author(s):

Chang-Hoon Choi ◽

Zhiping Yu ◽

R.W. Dutton

Keyword(s):

Simulation Study ◽

Tunneling Current ◽

Double Gate ◽

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