An Accurate Analytical Current Model of Double-gate Heterojunction Tunneling FET

IEEE Transactions on Electron Devices ◽

10.1109/ted.2017.2654248 ◽

2017 ◽

Vol 64 (3) ◽

pp. 938-944 ◽

Author(s):

Yunhe Guan ◽

Zunchao Li ◽

Wenhao Zhang ◽

Yefei Zhang

Keyword(s):

Current Model ◽

Double Gate ◽

Download Full-text

Analytical drain current model using temperature dependence model in nanoscale Double-Gate (DG) MOSFETs

2013 14th International Conference on Ultimate Integration on Silicon (ULIS) ◽

10.1109/ulis.2013.6523503 ◽

2013 ◽

Author(s):

M. Cheralathan ◽

C. Sampedro ◽

F. Gamiz ◽

B. Iniguez

Keyword(s):

Temperature Dependence ◽

Current Model ◽

Drain Current ◽

Download Full-text

An analytical charge-based drain current model for nano-scale In0.52Al0.48As–In0.53Ga0.47as a separated double-gate HEMT

Semiconductor Science and Technology ◽

10.1088/0268-1242/25/11/115003 ◽

2010 ◽

Vol 25 (11) ◽

pp. 115003 ◽

Author(s):

Servin Rathi ◽

Jyotika Jogi ◽

Mridula Gupta ◽

R S Gupta

Keyword(s):

Current Model ◽

Drain Current ◽

Double Gate ◽

Download Full-text

Numerical Corrections to Estimate Depletion Region Width in Pseudo-two-dimensional Model of Double-Gate Tunneling FET

10.1109/niles53778.2021.9600561 ◽

2021 ◽

Author(s):

Muhammad Elgamal ◽

Ahmed Shaker

Keyword(s):

Depletion Region ◽

Double Gate ◽

Two Dimensional ◽

Dimensional Model ◽

Tunneling Fet ◽

Two Dimensional Model ◽

Download Full-text

An Accurate Drain Current Model of Dual Material Double Gate Metal Oxide Semiconductor Field Effect Transistor

Silicon ◽

10.1007/s12633-021-01321-y ◽

2021 ◽

Author(s):

Himeli Chakrabarti ◽

Reshmi Maity ◽

S. Baishya ◽

N. P. Maity

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Current Model ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor ◽

Download Full-text

Analytical drain current model to study the impact of interface trap charges on device performance of Double Gate Ge Ferroelectric FET (DGGeFeFET)

2018 Conference on Emerging Devices and Smart Systems (ICEDSS) ◽

10.1109/icedss.2018.8544314 ◽

2018 ◽

Author(s):

Monika Bansal ◽

Harsupreet Kaur

Keyword(s):

Current Model ◽

Drain Current ◽

Interface Trap ◽

Device Performance ◽

Double Gate ◽

Download Full-text

A unified drain current model for nanoscale double-gate and surrounding-gate MOSFETs incorporating velocity saturation

2010 3rd International Nanoelectronics Conference (INEC) ◽

10.1109/inec.2010.5424994 ◽

2010 ◽

Author(s):

Lining Zhang ◽

Xingye Zhou ◽

Yiwen Xu ◽

Lin Chen ◽

Wang Zhou ◽

...

Keyword(s):

Current Model ◽

Drain Current ◽

Double Gate ◽

Velocity Saturation ◽

Surrounding Gate

Download Full-text

Drain current model for double-gate tunnel field-effect transistor with hetero-gate-dielectric and source-pocket

Microelectronics Reliability ◽

10.1016/j.microrel.2015.09.014 ◽

2016 ◽

Vol 59 ◽

pp. 30-36 ◽

Author(s):

Ping Wang ◽

YiQi Zhuang ◽

Cong Li ◽

Zhi Jiang ◽

YuQi Liu

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Current Model ◽

Drain Current ◽

Double Gate ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

Download Full-text

A subthreshold current model for nanoscale short channel junctionless MOSFETs applicable to symmetric and asymmetric double-gate structure

Solid-State Electronics ◽

10.1016/j.sse.2013.02.004 ◽

2013 ◽

Vol 82 ◽

pp. 77-81 ◽

Author(s):

Xiaoshi Jin ◽

Xi Liu ◽

Hyuck-In Kwon ◽

Jung-Hee Lee ◽

Jong-Ho Lee

Keyword(s):

Current Model ◽

Double Gate ◽

Short Channel ◽

Subthreshold Current ◽

Download Full-text

Drain current model for undoped symmetric double-gate FETs using a velocity saturation model with exponent n=2

2007 International Semiconductor Device Research Symposium ◽

10.1109/isdrs.2007.4422298 ◽

2007 ◽

Author(s):

Venkatnarayan Hariharan ◽

Juzer Vasi ◽

Ramgopal Rao

Keyword(s):

Current Model ◽

Drain Current ◽

Double Gate ◽

Saturation Model ◽

Velocity Saturation

Download Full-text

Explicit drain current model of junctionless double-gate field-effect transistors

Solid-State Electronics ◽

10.1016/j.sse.2013.07.015 ◽

2013 ◽

Vol 89 ◽

pp. 134-138 ◽

Author(s):

Ashkhen Yesayan ◽

Fabien Prégaldiny ◽

Jean-Michel Sallese

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Current Model ◽

Drain Current ◽

Download Full-text