Design of test-system for EMC investigations of aviation electronic devices

The first few atomic layers of a solid can form a barrier between its interior and an often hostile environment. Although adsorption at the vacuum-solid interface has been studied in great detail, little is known about adsorption at the liquid-solid interface. Adsorption at a liquid-solid interface is of intrinsic interest, and is of technological importance because it provides a way to coat a surface with monolayer or multilayer structures. A pinhole free monolayer (with a reasonable dielectric constant) could lead to the development of nanoscale capacitors with unique characteristics and lithographic resists that surpass the resolution of their conventional counterparts. Chemically selective adsorption is of particular interest because it can be used to passivate a surface from external modification or change the wear and the lubrication properties of a surface to reflect new and useful properties. Immunochemical adsorption could be used to fabricate novel molecular electronic devices or to construct small, “smart”, unobtrusive sensors with the potential to detect a wide variety of preselected species at the molecular level. These might include a particular carcinogen in the environment, a specific type of explosive, a chemical agent, a virus, or even a tumor in the human body.

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Study of dislocation loops in Arsenic-Rich as-grown GaAs

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100126548 ◽

1987 ◽

Vol 45 ◽

pp. 350-351

Author(s):

Byung-Teak Lee

Keyword(s):

Point Defects ◽

Electronic Devices ◽

Arsenic Concentration ◽

Stoichiometric Compound ◽

Dislocation Loops ◽

Gaas Crystal ◽

Ion Milling ◽

Transmission Electron ◽

Arsenic Source ◽

High Arsenic

Grown-in dislocations in GaAs have been a major obstacle in utilizing this material for the potential electronic devices. Although it has been proposed in many reports that supersaturation of point defects can generate dislocation loops in growing crystals and can be a main formation mechanism of grown-in dislocations, there are very few reports on either the observation or the structural analysis of the stoichiometry-generated loops. In this work, dislocation loops in an arsenic-rich GaAs crystal have been studied by transmission electron microscopy.The single crystal with high arsenic concentration was grown using the Horizontal Bridgman method. The arsenic source temperature during the crystal growth was about 630°C whereas 617±1°C is normally believed to be optimum one to grow a stoichiometric compound. Samples with various orientations were prepared either by chemical thinning or ion milling and examined in both a JEOL JEM 200CX and a Siemens Elmiskop 102.

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Immunogold labeling of CMP-KDO synthetase produced by recombinant E. Coli cells

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100128900 ◽

1987 ◽

Vol 45 ◽

pp. 924-925

Author(s):

F. A. Durum ◽

R. G. Goldman ◽

T. J. Bolling ◽

M. F. Miller

Keyword(s):

Inclusion Bodies ◽

Large Scale ◽

Recombinant Dna ◽

Test System ◽

Cell Protein ◽

Gram Negative Bacteria ◽

Cytoplasmic Inclusions ◽

Isolation And Purification ◽

E Coli ◽

Low Concentrations

CMP-KDO synthetase (CKS) is an enzyme which plays a key role in the synthesis of LPS, an outer membrane component unique to gram negative bacteria. CKS activates KDO to CMP-KDO for incorporation into LPS. The enzyme is normally present in low concentrations (0.02% of total cell protein) which makes it difficult to perform large scale isolation and purification. Recently, the gene for CKS from E. coli was cloned and various recombinant DNA constructs overproducing CKS several thousandfold (unpublished data) were derived. Interestingly, no cytoplasmic inclusions of overproduced CKS were observed by EM (Fig. 1) which is in contrast to other reports of large proteinaceous inclusion bodies in various overproducing recombinant strains. The present immunocytochemical study was undertaken to localize CKS in these cells.Immune labeling conditions were first optimized using a previously described cell-free test system. Briefly, this involves soaking small blocks of polymerized bovine serum albumin in purified CKS antigen and subjecting them to various fixation, embedding and immunochemical conditions.

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Real Ear Sound Pressure Levels Developed by Three Portable Stereo System Earphones

American Journal of Audiology ◽

10.1044/1059-0889.0104.52 ◽

1992 ◽

Vol 1 (4) ◽

pp. 52-55 ◽

Cited By ~ 4

Author(s):

Gail L. MacLean ◽

Andrew Stuart ◽

Robert Stenstrom

Keyword(s):

High Frequency ◽

Sound Pressure ◽

Low Frequency ◽

Test System ◽

Output Frequency ◽

Frequency Effects ◽

Adult Men ◽

Frequency Responses ◽

Significant Difference ◽

Sound Pressure Levels

Differences in real ear sound pressure levels (SPLs) with three portable stereo system (PSS) earphones (supraaural [Sony Model MDR-44], semiaural [Sony Model MDR-A15L], and insert [Sony Model MDR-E225]) were investigated. Twelve adult men served as subjects. Frequency response, high frequency average (HFA) output, peak output, peak output frequency, and overall RMS output for each PSS earphone were obtained with a probe tube microphone system (Fonix 6500 Hearing Aid Test System). Results indicated a significant difference in mean RMS outputs with nonsignificant differences in mean HFA outputs, peak outputs, and peak output frequencies among PSS earphones. Differences in mean overall RMS outputs were attributed to differences in low-frequency effects that were observed among the frequency responses of the three PSS earphones. It is suggested that one cannot assume equivalent real ear SPLs, with equivalent inputs, among different styles of PSS earphones.

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