Polysilicon thin film transistors fabricated at 100°C on a flexible plastic substrate

2002 ◽  
Author(s):  
P.G. Carey ◽  
P.M. Smith ◽  
M.O. Thompson ◽  
T.W. Sigmon
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Plastic Substrate ◽  
Flexible Plastic Substrate

scholarly journals Flexography‐Printed In 2 O 3 Semiconductor Layers for High‐Mobility Thin‐Film Transistors on Flexible Plastic Substrate

2015 ◽  
Vol 27 (44) ◽  
pp. 7168-7175 ◽  
Author(s):  
Jaakko Leppäniemi ◽  
Olli‐Heikki Huttunen ◽  
Himadri Majumdar ◽  
Ari Alastalo
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Plastic Substrate ◽  
Flexible Plastic Substrate

Double-gate polycrystalline-germanium thin-film transistors using copper-induced crystallization on flexible plastic substrate

2019 ◽  
Vol 58 (4) ◽  
pp. 046501 ◽  
Author(s):  
Hiroki Utsumi ◽  
Naoki Nishiguchi ◽  
Ryo Miyazaki ◽  
Hitoshi Suzuki ◽  
Kuninori Kitahara ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Plastic Substrate ◽  
Double Gate ◽  
Induced Crystallization ◽  
Flexible Plastic Substrate

scholarly journals Electrical, Structural, Optical, and Adhesive Characteristics of Aluminum-Doped Tin Oxide Thin Films for Transparent Flexible Thin-Film Transistor Applications

Materials ◽  
2019 ◽  
Vol 12 (1) ◽  
pp. 137 ◽  
Author(s):  
Seung-Hun Lee ◽  
Kihwan Kwon ◽  
Kwanoh Kim ◽  
Jae Sung Yoon ◽  
Doo-Sun Choi ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Thin Film Transistor ◽  
Electronic Devices ◽  
Optical Transmittance ◽  
Plastic Substrate ◽  
Current Ratio ◽  
Vacancy Defects ◽  
Potential Applications

The properties of Al-doped SnOx films deposited via reactive co-sputtering were examined in terms of their potential applications for the fabrication of transparent and flexible electronic devices. Al 2.2-atom %-doped SnOx thin-film transistors (TFTs) exhibit improved semiconductor characteristics compared to non-doped films, with a lower sub-threshold swing of ~0.68 Vdec−1, increased on/off current ratio of ~8 × 107, threshold voltage (Vth) near 0 V, and markedly reduced (by 81%) Vth instability in air, attributable to the decrease in oxygen vacancy defects induced by the strong oxidizing potential of Al. Al-doped SnOx films maintain amorphous crystallinity, an optical transmittance of ~97%, and an adhesive strength (to a plastic substrate) of over 0.7 kgf/mm; such films are thus promising semiconductor candidates for fabrication of transparent flexible TFTs.

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