scholarly journals Electrical, Structural, Optical, and Adhesive Characteristics of Aluminum-Doped Tin Oxide Thin Films for Transparent Flexible Thin-Film Transistor Applications

Materials ◽  
2019 ◽  
Vol 12 (1) ◽  
pp. 137 ◽  
Author(s):  
Seung-Hun Lee ◽  
Kihwan Kwon ◽  
Kwanoh Kim ◽  
Jae Sung Yoon ◽  
Doo-Sun Choi ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Thin Film Transistor ◽  
Electronic Devices ◽  
Optical Transmittance ◽  
Plastic Substrate ◽  
Current Ratio ◽  
Vacancy Defects ◽  
Potential Applications

The properties of Al-doped SnOx films deposited via reactive co-sputtering were examined in terms of their potential applications for the fabrication of transparent and flexible electronic devices. Al 2.2-atom %-doped SnOx thin-film transistors (TFTs) exhibit improved semiconductor characteristics compared to non-doped films, with a lower sub-threshold swing of ~0.68 Vdec−1, increased on/off current ratio of ~8 × 107, threshold voltage (Vth) near 0 V, and markedly reduced (by 81%) Vth instability in air, attributable to the decrease in oxygen vacancy defects induced by the strong oxidizing potential of Al. Al-doped SnOx films maintain amorphous crystallinity, an optical transmittance of ~97%, and an adhesive strength (to a plastic substrate) of over 0.7 kgf/mm; such films are thus promising semiconductor candidates for fabrication of transparent flexible TFTs.

scholarly journals P3HT Nanofibrils Thin-Film Transistors by Adsorbing Deposition in Suspension

Materials ◽  
2019 ◽  
Vol 12 (21) ◽  
pp. 3643 ◽  
Author(s):  
Shuichi Nagamatsu ◽  
Masataka Ishida ◽  
Shougo Miyajima ◽  
Shyam S. Pandey
Keyword(s):  
Thin Film ◽  
Conjugated Polymer ◽  
Thin Film Transistors ◽  
Preparation Method ◽  
Substrate Surface ◽  
Thin Film Transistor ◽  
Current Ratio ◽  
P3ht Film ◽  
Polymer Thin Film ◽  
Film Preparation

A novel film preparation method utilizing polymer suspension, entitled adsorbing deposition in suspensions (ADS), has been proposed. The poly(3-hexylthiophene) (P3HT) toluene solution forms P3HT nanofibrils dispersed suspension by aging. P3HT nanofibrils are highly crystallized with sharp vibronic absorption spectra. By the ADS method, only P3HT nanofibrils in suspension can be deposited on the substrate surface without any disordered fraction from the dissolved P3HT in suspension. Formed ADS film contains only the nanostructured conjugated polymer. Fabricated polymer thin-film transistor (TFT) utilizing ADS P3HT film shows good TFT performances with low off current, narrow subthreshold swing and large on/off current ratio.

Photoresponses of Zinc Tin Oxide Thin-Film Transistor

2020 ◽  
Vol 20 (3) ◽  
pp. 1704-1708
Author(s):  
Wei Lun Huang ◽  
Chen-Chuan Yang ◽  
Sheng-Po Chang ◽  
Shoou-Jinn Chang
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistor ◽  
Drain Current ◽  
Oxide Thin Film ◽  
Current Ratio ◽  
Uv Photodetector ◽  
Saturation Region ◽  
Zinc Tin Oxide ◽  
Sputtering System

In this study, the optical and electrical properties of a zinc tin oxide (ZTO) thin-film transistor (TFT) were investigated. The TFT was fabricated using ZTO as the active layer, which was deposited by a radio frequency magnetron sputtering system, to form an ultraviolet (UV) photodetector. The device has a threshold voltage of 0.48 V, field-effect mobility of 1.47 cm2/Vs in the saturation region, on/off drain current ratio of 2×106, and subthreshold swing of 0.45 V/decade in a dark environment. Moreover, as a UV photodetector, the device has a long photoresponse time, responsivity of 0.329 A/W, and rejection ratio of 3.19×104 at a gate voltage of -15 V under illumination of wavelength 300 nm.

The Materials Issues and Applications of Amorphous Silicon Thin Film Transistors

1986 ◽  
Vol 70 ◽  
Author(s):  
M. J. Thompson
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Liquid Crystal Display ◽  
Thin Film Transistor ◽  
Electronic Devices ◽  
Current Status ◽  
Operating Voltage ◽  
Silicon Thin Film ◽  
Input And Output

ABSTRACTRecently considerable interest has been generated in the application of thin film transistor (TFT) technology in electronic input and output devices. Amorphous silicon (a-Si:H) has made a major impact in these applications because of the relative ease with which the material can be economically manufactured over large areas. This paper will review in particular the current status of a-Si:H TFTs in liquid crystal display and printer applications, in addition to sensor/TFT arrays for page width input scanner document readers. There are a number of materials issues which limit the performance of these devices. In addition, there are some technological issues which influence the yield of the processes used to fabricate these electronic devices over large areas. Some novel new devices have been recently developed which dramatically increase the operating voltage of a- Si:H TFTs. Other new structures have been proposed and demonstrated for increasing the current and speed of these devices.

Organic Electronics

2020 ◽  
Author(s):  
Stephen R. Forrest
Keyword(s):  
Thin Film ◽  
Organic Electronics ◽  
Thin Film Transistors ◽  
High Performance ◽  
Electronic Devices ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Organic Thin Film ◽  
Graduate Studies ◽  
Organic Light

Organic electronics is a platform for very low cost and high performance optoelectronic and electronic devices that cover large areas, are lightweight, and can be both flexible and conformable to irregularly shaped surfaces such as foldable smart phones. Organics are at the core of the global organic light emitting device (OLED) display industry, and also having use in efficient lighting sources, solar cells, and thin film transistors useful in medical and a range of other sensing, memory and logic applications. This book introduces the theoretical foundations and practical realization of devices in organic electronics. It is a product of both one and two semester courses that have been taught over a period of more than two decades. The target audiences are students at all levels of graduate studies, highly motivated senior undergraduates, and practicing engineers and scientists. The book is divided into two sections. Part I, Foundations, lays down the fundamental principles of the field of organic electronics. It is assumed that the reader has an elementary knowledge of quantum mechanics, and electricity and magnetism. Background knowledge of organic chemistry is not required. Part II, Applications, focuses on organic electronic devices. It begins with a discussion of organic thin film deposition and patterning, followed by chapters on organic light emitters, detectors, and thin film transistors. The last chapter describes several devices and phenomena that are not covered in the previous chapters, since they lie outside of the current mainstream of the field, but are nevertheless important.

scholarly journals Violet-light stimulated synaptic and learning functions in a zinc–tin oxide photoelectric transistor for neuromorphic computation

RSC Advances ◽  
2020 ◽  
Vol 10 (70) ◽  
pp. 42682-42687
Author(s):  
Ting-Ruei Lin ◽  
Li-Chung Shih ◽  
Po-Jen Cheng ◽  
Kuan-Ting Chen ◽  
Jen-Sue Chen
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistor ◽  
Violet Light ◽  
Learning Functions ◽  
Zinc Tin Oxide

Photonic potentiation and electric depression are realized in a ZTO thin film transistor for the application in neuromorphic computation.

Hydrogenation Effect of Amorphous Silicon Thin Film Transistors by Atmospheric Pressure CVD

1993 ◽  
Vol 297 ◽  
Author(s):  
Byung Chul Ahn ◽  
Jeong Hyun Kim ◽  
Dong Gil Kim ◽  
Byeong Yeon Moon ◽  
Kwang Nam Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Atmospheric Pressure ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Field Effect Mobility ◽  
Silicon Thin Film ◽  
Hydrogenation Effect

The hydrogenation effect was studied in the fabrication of amorphous silicon thin film transistor using APCVD technique. The inverse staggered type a-Si TFTs were fabricated with the deposited a-Si and SiO2 films by the atmospheric pressure (AP) CVD. The field effect mobility of the fabricated a-Si TFT is 0.79 cm2/Vs and threshold voltage is 5.4V after post hydrogenation. These results can be applied to make low cost a-Si TFT array using an in-line APCVD system.

A Sustainable Approach to Flexible Electronics with Zinc-Tin Oxide Thin-Film Transistors

2018 ◽  
Vol 4 (7) ◽  
pp. 1800032 ◽  
Author(s):  
Cristina Fernandes ◽  
Ana Santa ◽  
Ângelo Santos ◽  
Pydi Bahubalindruni ◽  
Jonas Deuermeier ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Zinc Tin Oxide

Formaldehyde Detection Based on P3HT/InSnO Composite Thin Film Transistor

2014 ◽  
Vol 875-877 ◽  
pp. 82-86
Author(s):  
Xian Li ◽  
Ya Dong Jiang ◽  
Hui Ling Tai ◽  
Guang Zhong Xie ◽  
Wen Chao Dan
Keyword(s):  
Thin Film ◽  
Composite Film ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
Thin Film Transistor ◽  
Organic Thin Film Transistors ◽  
Composite Thin Film ◽  
Organic Thin Film ◽  
Response And Recovery

Formaldehyde, a colorless and pungent-smelling gas, had been confirmed be a huge threat to people health. The detection of formaldehyde was necessary and important at room temperature. Sprayed P3HT/InSnO composite film based on organic thin film transistors (OTFT) was fabricated to detect formaldehyde at room temperature in this paper. The results showed that P3HT/ InSnO-OTFT showed better response and recovery to HCHO compared with P3HT-OTFT at room temperature.

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