Fabrication and Characterization of High-Current-Gain 4H-SiC Bipolar Junction Transistors

2008 ◽  
Vol 55 (8) ◽  
pp. 1899-1906 ◽  
Author(s):  
Jianhui Zhang ◽  
Xueqing Li ◽  
Petre Alexandrov ◽  
Leonid Fursin ◽  
Xiaohui Wang ◽  
...  
Keyword(s):  
Current Gain ◽  
Bipolar Junction Transistors ◽  
High Current ◽  
Fabrication And Characterization

Enhanced Current Gain (>250) in 4H-SiC Bipolar Junction Transistors by a Deep-Level-Reduction Process

2012 ◽  
Vol 717-720 ◽  
pp. 1117-1122 ◽  
Author(s):  
Hiroki Miyake ◽  
Tsunenobu Kimoto ◽  
Jun Suda
Keyword(s):  
Room Temperature ◽  
Surface Passivation ◽  
Deep Level ◽  
Reduction Process ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
High Current ◽  
Previous Record ◽  
Maximum Current ◽  
Level Reduction

We demonstrate 4H-SiC bipolar junction transistors (BJTs) with an enhanced current gain over 250. High current gain was achieved by utilizing optimized device geometry as well as optimized surface passivation, continuous epitaxial growth of the emitter-base junction, combined with an intentional deep-level-reduction process based on thermal oxidation to improve the lifetime in p-SiC base. We achieved a maximum current gain (β) of 257 at room temperature and 127 at 250°C for 4H-SiC BJTs fabricated on the (0001)Si-face. The gain of 257 is twice as large as the previous record gain. We also demonstrate BJTs on the (000-1)C-face that showed the highest β of 439 among the SiC BJTs ever reported.

4H-SiC Bipolar Junction Transistors with a Current Gain of 108

2008 ◽  
Vol 600-603 ◽  
pp. 1159-1162 ◽  
Author(s):  
Q. Jon Zhang ◽  
Charlotte Jonas ◽  
Albert A. Burk ◽  
Craig Capell ◽  
Jonathan Young ◽  
...  
Keyword(s):  
High Temperatures ◽  
Breakdown Voltage ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
High Current ◽  
Emitter Current ◽  
Wide Range ◽  
Operating Temperatures ◽  
A Current

4H-SiC BJTs with a common emitter current gain (b) of 108 at 25°C have been demonstrated. The high current gain was accomplished by using a base as thin as 0.25 μm. The current gain decreases at high temperatures but is still greater than 40 at 300°C. The device demonstrates an open emitter breakdown voltage (BVCBO) of 1150 V, and an open base breakdown voltage (BVCEO) of 250 V. A low specific on-resistance of 3.6 mW-cm2 at 25°C was achieved. The BJTs have shown blocking capabilities over a wide range of operating temperatures up to 300°C.

Fabrication and Characterization of 4H-SiC 6kV Gate Turn-Off Thyristor

2012 ◽  
Vol 717-720 ◽  
pp. 1163-1166 ◽  
Author(s):  
Lei Lin ◽  
Jian Hui Zhao
Keyword(s):  
High Current Density ◽  
High Current ◽  
Initial Pulse ◽  
Large Area ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Pulse Testing ◽  
Blocking Voltage ◽  
Fabrication And Characterization

In this paper, we report a 0.1cm2 4H-SiC gate-turn-off (GTO) thyristor with 6 kV blocking voltage fabricated on a structure with a 60µm blocking layer. A relatively large area, high voltage 4H-SiC GTO that exhibits encouraging characteristic at the on- and off-states, and a low leakage current with 63% devices blocking 3kV or higher. Initial pulse testing result shows that the fabricated GTOs are capable of both high current density and high turn-off speed.

scholarly journals A New Low Cost Current Measurement Circuit with Temperature Compensation

2020 ◽  
Vol 15 (3) ◽  
pp. 1-5
Author(s):  
Antonio Carlos da Costa Telles ◽  
Jair Lins de Emeri ◽  
Saulo Finco ◽  
Luis Eduardo Seixas
Keyword(s):  
Temperature Compensation ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Electrical Characterization ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Exponential Relationship ◽  
Electrical Currents ◽  
Commercial Off The Shelf

The electrical characterization of semiconductors devices, when submitted to ionizing radiation should be done in a large range of currents; however, the instrumentation with this ability is very expensive. This work proposes a low-cost circuit using commercial off-the-shelf components (COTS) that enables the measurement of electrical currents in the order of pA range. The circuit presents an output current that is an amplified version of the current to be measured, using the exponential relationship between currents and voltages in Bipolar Junction Transistors (BJTs) and Metal Oxide Silicon Field Effect Transistors (MOSFETs) when operating in the weak inversion region. Furthermore, a block was introduced in order to compensate the gain’s temperature dependence. The results showed that the operating range for the current that will be measured was more than seven decades using BJTs and five decades by using MOSFETs with a high linearity. The circuit version using MOSFETs was able to measure currents as low as 100 fA. The current gain has also good linearity for over five decades. This circuit has a stable behavior for the range of 20 °C to 40 °C, because of the temperature compensation block.

High Temperature Characterization of 4H-SiC Bipolar Junction Transistors

2006 ◽  
Vol 527-529 ◽  
pp. 1437-1440 ◽  
Author(s):  
Sumi Krishnaswami ◽  
Anant K. Agarwal ◽  
Jim Richmond ◽  
Craig Capell ◽  
Sei Hyung Ryu ◽  
...  
Keyword(s):  
High Temperature ◽  
Leakage Current ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Linear Region ◽  
Collector Voltage ◽  
Avalanche Behavior ◽  
Dc Current ◽  
Recent Demonstration

This paper summarizes the recent demonstration of 3200 V, 10 A BJT devices with a high common emitter current gain of 44 in the linear region, and a specific on-resistance of 8.1 mΩ- cm2 (10 A at 0.90 V with a base current of 350 mA and an active area of 0.09 cm2). The onresistance increases to 40 mΩ-cm2 at 350°C, while the DC current gain decreases to 30. A sharp avalanche behavior was observed with a leakage current of 10 μA at a collector voltage of 3.2 kV.

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