A* high Q-factor circular-section solenoid-type inductor is designed and fabricated through micro electro mechanical system (MEMS) technology. The radius of the circular-section is 100μm. Ansoft HFSS is used to design and optimize the structure parameters of the inductor. The stable inductance of 10nH and maximum Q-factor of 46 is gained at the N of 10, wire width w of 10μm, space between wires d of 15μm and the self-resonance frequency of the inductor is above 10GHz. A novel fabrication method—flip chip bonding is proposed to bond the two parts of the inductor, and the process is compatible with CMOS process.
High-Q integrated inductors on trenched silicon islands