High Q Circular-Section Solenoid-Type Inductor

Author(s):  
Xiuhan Li ◽  
Guanghua Shu ◽  
Jinan Sao ◽  
Xiongwei Zhang

A* high Q-factor circular-section solenoid-type inductor is designed and fabricated through micro electro mechanical system (MEMS) technology. The radius of the circular-section is 100μm. Ansoft HFSS is used to design and optimize the structure parameters of the inductor. The stable inductance of 10nH and maximum Q-factor of 46 is gained at the N of 10, wire width w of 10μm, space between wires d of 15μm and the self-resonance frequency of the inductor is above 10GHz. A novel fabrication method—flip chip bonding is proposed to bond the two parts of the inductor, and the process is compatible with CMOS process.

2010 ◽  
Author(s):  
N. Khalid ◽  
K. Shah ◽  
J. Singh ◽  
H. P. Le ◽  
J. Devlin ◽  
...  
Keyword(s):  
Q Factor ◽  
High Q ◽  

2015 ◽  
Vol 815 ◽  
pp. 364-368
Author(s):  
N. Khalid ◽  
N.I.M. Nor ◽  
W.M.W. Norhaimi ◽  
Zaliman Sauli ◽  
Vithyacharan Retnasamy

This paper presents the design and analysis of new proposed topology micro-electro-mechanical system (MEMS) inductor. This new symmetric MEMS inductor is designed to reduce the total length of the conductor strip and hence reduce the resistance of the metal tracks. This results significant increases in the quality (Q) factor of the inductor. In this paper, the MEMS inductor is designed using CoventorWare®, which is powerful software for MEMS computer aided design (CAD), modeling and simulation. Results indicate that new symmetric inductor topology has thehighest Q-factor and it hasbeenimproved bytwo times compared to circular inductor. The analysis revealed that area of the symmetric inductor has reduced by37.5% compared to the circular inductor. Result has proved that the reduction of length of the conductor strip has reduced the resistance of the metal tracks and results in a high Q-factor inductor.


2015 ◽  
Vol 799-800 ◽  
pp. 1217-1221
Author(s):  
Ping Cheng Chen ◽  
Chung Long Pan ◽  
Y.C. Qiu ◽  
G.P. Jhuan

A design and simulation for microstrip line filter with semicircle defected ground structure has been researched. In this paper, simulated soft (Ansoft HFSS V.6.0) used to be simulated the frequency response under different parameters such as dimensions, amounts of SDGS.The results show good performance of SDGS in high cut-off frequency, erase of harmonic frequency, smaller dimension. Final, a filter with4.4GHz center frequency,high Q-factor had been design and fabricated.


2013 ◽  
Vol 543 ◽  
pp. 176-179 ◽  
Author(s):  
D.Q. Zhao ◽  
Xia Zhang ◽  
P. Liu ◽  
F. Yang ◽  
C. Lin ◽  
...  

In this work we studied the fabrication of a monolithic bimaterial micro-cantilever resonant IR sensor with on-chip drive circuits. The effects of high temperature process and stress induced performance degradation were investigated. The post-CMOS MEMS (micro electro mechanical system) fabrication process of this IR sensor is the focus of this paper, starting from theoretical analysis and simulation, and then moving to experimental verification. The capacitive cantilever structure was fabricated by surface micromachining method, and drive circuits were prepared by standard CMOS process. While the stress introduced by MEMS films, such as the tensile silicon nitride which works as a contact etch stopper layer for MOSFETs and releasing stop layer for the MEMS structure, increases the electron mobility of NMOS, PMOS hole mobility decreases. Moreover, the NMOS threshold voltage (Vth) shifts, and transconductance (Gm) degrades. An additional step of selective removing silicon nitride capping layer and polysilicon layer upon IC area were inserted into the standard CMOS process to lower the stress in MOSFET channel regions. Selective removing silicon nitride and polysilicon before annealing can void 77% Vth shift and 86% Gm loss.


Photonics ◽  
2021 ◽  
Vol 8 (7) ◽  
pp. 256
Author(s):  
Yue-Xin Yin ◽  
Xiao-Pei Zhang ◽  
Xiao-Jie Yin ◽  
Yue Li ◽  
Xin-Ru Xu ◽  
...  

A high-Q-factor tunable silica-based microring resonator (MRR) is demonstrated. To meet the critical-coupling condition, a Mach–Zehnder interferometer (MZI) as the tunable coupler was integrated with a racetrack resonator. Then, 40 mW electronic power was applied on the microheater on the arm of MZI, and a maximal notch depth of about 13.84 dB and a loaded Q factor of 4.47 × 106 were obtained. The proposed MRR shows great potential in practical application for optical communications and integrated optics.


Sensors ◽  
2021 ◽  
Vol 21 (11) ◽  
pp. 3731
Author(s):  
Maik Bertke ◽  
Ina Kirsch ◽  
Erik Uhde ◽  
Erwin Peiner

To monitor airborne nano-sized particles (NPs), a single-chip differential mobility particle sizer (DMPS) based on resonant micro cantilevers in defined micro-fluidic channels (µFCs) is introduced. A size bin of the positive-charged fraction of particles herein is separated from the air stream by aligning their trajectories onto the cantilever under the action of a perpendicular electrostatic field of variable strength. We use previously described µFCs and piezoresistive micro cantilevers (PMCs) of 16 ng mass fabricated using micro electro mechanical system (MEMS) technology, which offer a limit of detection of captured particle mass of 0.26 pg and a minimum detectable particulate mass concentration in air of 0.75 µg/m3. Mobility sizing in 4 bins of a nebulized carbon aerosol NPs is demonstrated based on finite element modelling (FEM) combined with a-priori knowledge of particle charge state. Good agreement of better than 14% of mass concentration is observed in a chamber test for the novel MEMS-DMPS vs. a simultaneously operated standard fast mobility particle sizer (FMPS) as reference instrument. Refreshing of polluted cantilevers is feasible without de-mounting the sensor chip from its package by multiply purging them alternately in acetone steam and clean air.


2011 ◽  
Vol 66-68 ◽  
pp. 933-936
Author(s):  
Xian Jie Meng

A one degree of freedom nonlinear dynamics model of self-excited vibration induced by dry-friction was built firstly, the numerical method was taken to study the impacts of structure parameters on self-excited vibration. The calculation result shows that the variation of stiffness can change the vibration amplitude and frequency of the self-excited vibration, but can not eliminate it, Along with the increase of system damping the self-excite vibration has the weakened trend and there a ritical damping, when damping is greater than it the self-excite vibration will be disappeared.


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