scholarly journals Design of the Low Noise Amplifier Circuit in Band L for Improve the Gain and Circuit Stability

2018 ◽  
Vol 1 (4) ◽  
Author(s):  
Arash Omidi ◽  
Rohalah Karami ◽  
Parisa Sadat Emadi ◽  
Hamed Moradi
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
System Stability ◽  
Third Order ◽  
Cmos Transistor ◽  
Cmos Lna ◽  
Noise Amplifier ◽  
The Cost ◽  
Intercept Point

In this paper, focuses on the design of Low Noise Amplifier circuitry in the frequency band L. This circuit is designed using the 0.18 nm CMOS transistor technology, which consists of two transistor Stage. The purpose of this research is to improve the cost of: Increase Gain - Increase circuit linearization - Create an integrative matching network for system stability. The application of this circuit can be used in wireless and GPS systems. The CMOS LNA exhibits a gain greater than 23 dB from 1.1 to 2.0 GHz, and a noise figure of 2.7 to 3.3 dB from 1.2 to 2.4 GHz. At 1.575 GHz, the 1-dB compression point (P1dB) is 1.73 dBm, with an input third-order intercept point (IIP3) of -3.98 dBm. This circuit is designed using ADS software.

scholarly journals LNA Prototype at 54 MHz to 88 MHz Using Discrete Components

2020 ◽  
Vol 4 (1) ◽  
pp. 32
Author(s):  
Prapto Nugroho ◽  
Ivan Muhammad Ihsan Izetbegovic ◽  
Wahyu Dewanto
Keyword(s):  
Power Consumption ◽  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Area Network ◽  
Third Order ◽  
Regional Area ◽  
Technical Specifications ◽  
Noise Amplifier ◽  
Intercept Point

This paper presents a design and prototyping of a Low-Noise Amplifier (LNA) for Wireless Regional Area Network (WRAN) operating in TV broadcast bands between 54 MHz – 88 MHz. The LNA design was then implemented by using discrete components. Components values was obtained by utilized DC analysis according to specifications which follows the Institute of Electrical and Electronics Engineering (IEEE) 802.22 standard on WRAN technical specifications. Simulation with 88 MHz produced S11 = -5.72 dB, S12 = -41.57 dB, S21 = 15.07 dB, S22 = -4.76 dB, Noise Figure (NF) = 3.9 dB, Input Third Order Intercept Point (IIP3) = 2.21 dBm, and power consumption of 45.39 mW. Experiments results on 88 MHz showed S11 = -6.13 dB and S21 = 0.74 dB.

A CMOS LNA Partially Degenerated Topology Proposal Using Active Inductors

2017 ◽  
Vol 26 (05) ◽  
pp. 1750078
Author(s):  
E. V. V. Cambero ◽  
C. E. Capovilla ◽  
I. R. S. Casella ◽  
R. R. Munoz ◽  
H. X. Araujo
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Active Area ◽  
Technical Feasibility ◽  
Active Inductors ◽  
Cmos Lna ◽  
Noise Amplifier ◽  
Compact Design

This paper presents the design of a CMOS low-noise amplifier (LNA) with partial inductive degeneration using active inductors in [Formula: see text]m technology. Both, the inductor of the partial degeneration and the load inductor, are actives. The inductors configurations are cascode with feedback resistance and Wu folded compact. The LNA has a gain of 13.2[Formula: see text]dB and a noise figure of 4.7[Formula: see text]dB at 1.8[Formula: see text]GHz. The layout has an active area of [Formula: see text]. The results are satisfactory, validating the compact design and demonstrating the technical feasibility of this proposed topology.

An ESD Protected Wideband CMOS Low Noise Amplifier Employing Active Feedback Technique

2011 ◽  
Vol 403-408 ◽  
pp. 2809-2813
Author(s):  
Kuan Bao ◽  
Xiang Ning Fan
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Cmos Process ◽  
Fully Integrated ◽  
Input Matching ◽  
Active Feedback ◽  
Cmos Lna ◽  
Noise Amplifier ◽  
On Chip

This paper presents a wideband low noise amplifier (LNA) for multi-standard radio applications. The low noise characteristic and input matching are simultaneously achieved by active-feedback technique. Bond-wire inductors and electrostatic devices (ESDs) are co-designed to improve the chip performance. Implemented in 0.18-μm CMOS process, the core size of the fully integrated LNA circuits is 535 μm×425 μm without any passive on-chip inductor. The simulated gain and the minimal noise figure of the CMOS LNA are 17.5 dB and 2.0 dB, respectively. The LNA achieves a -3dB bandwidth of 3.1 GHz. And the simulated IIP3 is -4.4 dBm at 2.5 GHz. Operating at 1.8V, the LNA draws a current of 7.7 mA.

scholarly journals Design of Low Noise Amplifier for 1.5 GHz

SCITECH Nepal ◽  
2018 ◽  
Vol 13 (1) ◽  
pp. 40-47
Author(s):  
Bijaya Shrestha
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Design System ◽  
Rf Receiver ◽  
Current Consumption ◽  
Additional Noise ◽  
Noise Amplifier ◽  
Rf Signal ◽  
Intercept Point

Low Noise Amplifier (LNA) is a front-end device of a radio frequency (RF) receiver used to increase the amplitude of an RF signal without much additional noise, thereby increasing the noise figure of the system. This paper presents design, simulation, and prototype of an LNA operating at 1.5 GHz for the bandwidth of 100 MHz. The circuit was simulated using Advanced Design System (ADS). The components used are Surface Mount Devices (SMDs); with transistor "Infineon BFP420" as a major component. Other components are resistors, capacitors, and inductors; inductors being superseded by microstrip lines. The circuit was fabricated on FR4 board. The measurements of several parameters of LNA were made using Vector Network Analyzer (VNA), Noise Figure Meter; and Spectrum Analyzer. The LNA has minimum gain of 15.4 dB and maximum noise figure of 1.33 dB. It is unconditionally stable from 50 MHz to 10 GHz. DC supply is 5V and the current consumption is 10 mA. This LNA offers Output-Third­Order-Intercept-Point (OJP3) of about 1 4 dBm.

scholarly journals Broadband GaAs pHemt LNA design for T/R module application

2016 ◽  
Vol 54 (5) ◽  
pp. 584
Author(s):  
Phong Dai Le ◽  
Vu Duy Thong ◽  
Pham Le Binh
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Small Signal Gain ◽  
Small Signal ◽  
Third Order ◽  
Wide Bandwidth ◽  
Fully Integrated ◽  
Three Stages ◽  
Noise Amplifier

In this paper, a three stages monolithic low noise amplifier (LNA) for T/R module application is presented. This LNA is fully integrated on 0.15-um pHEMT GaAs technology and achieves a wide bandwidth from 6 GHz to 11 GHz. Within this band, the LNA has the minimum of 1.3 dB noise figure and over 25 dB small signal gain. The output third order interception point (OIP3) is over 30 dBm and the 1 dB compression point (P1 dB) is 16 dBm at the output.

A Ku-Band Low Noise Amplifier Based on Transformer

2013 ◽  
Vol 655-657 ◽  
pp. 1550-1554 ◽  
Author(s):  
Yu Lin Wang ◽  
Man Long Her ◽  
Ming Wei Hsu ◽  
Wen Ko
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Feedback Network ◽  
Chip Size ◽  
Cmos Lna ◽  
Flat Gain ◽  
Noise Amplifier ◽  
Source Degeneration ◽  
Ku Band

The aim of this paper is to design and implement a low noise amplifier (LNA) based on transformer for a Ku-band application. The proposed CMOS LNA can have an enhanced gain because of the cascade topology, a highly flat gain response because of the RC feedback network, and a wide passband because of the source degeneration structure that effectively suppresses the Miller effect. The Ku-band LNA dissipates 22.175 mW power and achieves the S11 of -10.31 to -6.77 dB, S22 of -18.1 to -37.78 dB, flat S21 of 8.78 to 10.59 dB, and noise figure of 3.96 to 5.33 dB across the 12~18 GHz span. The measured output P1dB is approximately -2 dBm. The chip size including all testing pads is only 0.545 x 0.599 mm2.

Measurement of a 270 GHz Low Noise Amplifier With 7.5 dB Noise Figure

2007 ◽  
Vol 17 (7) ◽  
pp. 546-548 ◽  
Author(s):  
T. Gaier ◽  
L. Samoska ◽  
A. Fung ◽  
W. R. Deal ◽  
V. Radisic ◽  
...  
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Noise Amplifier

Design of 3.1-10.6GHz CMOS LNA Based on Input Matching Technique of Common-Gate Topology

2013 ◽  
Vol 479-480 ◽  
pp. 1014-1017
Author(s):  
Yi Cheng Chang ◽  
Meng Ting Hsu ◽  
Yu Chang Hsieh
Keyword(s):  
Noise Figure ◽  
Supply Voltage ◽  
Average Power ◽  
Wide Band ◽  
Low Noise ◽  
Input Matching ◽  
Common Gate ◽  
Cmos Lna ◽  
Noise Amplifier ◽  
Is Design

In this study, three stage ultra-wide-band CMOS low-noise amplifier (LNA) is presented. The UWB LNA is design in 0.18μm TSMC CMOS technique. The LNA input and output return loss are both less than-10dB, and achieved 10dB of average power gain, the minimum noise figure is 6.55dB, IIP3 is about-9.5dBm. It consumes 11mW from a 1.0-V supply voltage.

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