Growth Optimization of Low-Pressure Chemical Vapor Deposition Silicon Nitride Film

Author(s):  
Wen Lei ◽  
Maojun Wang ◽  
Xinnan Lin ◽  
Meihua Liu ◽  
Jiansheng Luo ◽  
...  
1992 ◽  
Vol 259 ◽  
Author(s):  
Mansour Moinpour ◽  
K. Bohannan ◽  
M. Shenasa ◽  
A. Sharif ◽  
G. Guzzo ◽  
...  

ABSTRACTA contamination control study of a Silicon Valley Group Thermco Systems Vertical Thermal Reactor(VTR) is presented. Trace elements of contaminants such as water vapor and oxygen have been shown to significantly affect the integrity of the silicon nitride film deposited by the low pressure chemical vapor deposition (LPCVD) process. This study documented the effects of process parameters on gaseous contamination levels, i.e., O2 and H2O vapor. Starting with a baseline process, the effects of an excursion of pre-deposition temperature ramp-up and stabilization condition, wafer load/unload and various post deposition conditions were explored. An axial profile of moisture and oxygen levels along the wafer load was obtained using Linde's Low Pressure Reactor Analysis(LPRAS) methodology. In addition, other process parameters such as gas flow rates during load and unload of wafers, pre-deposition N2 purge and process tube exposure time to ambient environment were- investigated. The wafers were analyzed for contaminants on the wafer surface or in the deposited silicon nitride film using FTIR and Auger spectroscopy techniques. They showed low levels of Si-O and no measurable Si-H or N-H bonds.


1997 ◽  
Vol 477 ◽  
Author(s):  
Koichiro Saga ◽  
Takeshi Hattori

ABSTRACTTrace organic contaminants adsorbing on silicon surfaces during transportation of wafers to a reaction chamber in an air ambient cause incubation before film growth starts in low-pressure chemical vapor deposition (LPCVD) of silicon nitride film on silicon substrates. The incubation time for wafers either exposed to cleanroom air for a long period without being stored in a box or stored in an outgassing plastic box prior to LPCVD is longer than that for wafers transported to the CVD reactor immediately after the previous step. It has been found that the longer incubation time is attributed to not only extraneous oxide grown on the silicon surface but also organic contaminants adsorbed on the surface.


2016 ◽  
Vol 119 (14) ◽  
pp. 145702 ◽  
Author(s):  
Pramod Reddy ◽  
Shun Washiyama ◽  
Felix Kaess ◽  
M. Hayden Breckenridge ◽  
Luis H. Hernandez-Balderrama ◽  
...  

2015 ◽  
Vol 54 (8S1) ◽  
pp. 08KD12 ◽  
Author(s):  
Ken Mishina ◽  
Atsufumi Ogishi ◽  
Kiyoshi Ueno ◽  
Sachiko Jonai ◽  
Norihiro Ikeno ◽  
...  

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