Influence of Surface Organic Contamination on the Incubation Time in Low-Pressure Chemical Vapor Deposition of Silicon Nitride on Silicon Substrates

1997 ◽  
Vol 477 ◽  
Author(s):  
Koichiro Saga ◽  
Takeshi Hattori
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Incubation Time ◽  
Vapor Deposition ◽  
Organic Contaminants ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Silicon Nitride Film ◽  
Silicon Substrates ◽  
Pressure Chemical

ABSTRACTTrace organic contaminants adsorbing on silicon surfaces during transportation of wafers to a reaction chamber in an air ambient cause incubation before film growth starts in low-pressure chemical vapor deposition (LPCVD) of silicon nitride film on silicon substrates. The incubation time for wafers either exposed to cleanroom air for a long period without being stored in a box or stored in an outgassing plastic box prior to LPCVD is longer than that for wafers transported to the CVD reactor immediately after the previous step. It has been found that the longer incubation time is attributed to not only extraneous oxide grown on the silicon surface but also organic contaminants adsorbed on the surface.

In Situ Contamination Control Investigation of Silicon Nitride Low Pressure Chemical Vapor Deposition Process in Vertical Thermal Reactors

1992 ◽  
Vol 259 ◽  
Author(s):  
Mansour Moinpour ◽  
K. Bohannan ◽  
M. Shenasa ◽  
A. Sharif ◽  
G. Guzzo ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Process Parameters ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Contamination Control ◽  
Pressure Chemical

ABSTRACTA contamination control study of a Silicon Valley Group Thermco Systems Vertical Thermal Reactor(VTR) is presented. Trace elements of contaminants such as water vapor and oxygen have been shown to significantly affect the integrity of the silicon nitride film deposited by the low pressure chemical vapor deposition (LPCVD) process. This study documented the effects of process parameters on gaseous contamination levels, i.e., O2 and H2O vapor. Starting with a baseline process, the effects of an excursion of pre-deposition temperature ramp-up and stabilization condition, wafer load/unload and various post deposition conditions were explored. An axial profile of moisture and oxygen levels along the wafer load was obtained using Linde's Low Pressure Reactor Analysis(LPRAS) methodology. In addition, other process parameters such as gas flow rates during load and unload of wafers, pre-deposition N2 purge and process tube exposure time to ambient environment were- investigated. The wafers were analyzed for contaminants on the wafer surface or in the deposited silicon nitride film using FTIR and Auger spectroscopy techniques. They showed low levels of Si-O and no measurable Si-H or N-H bonds.

High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies

2016 ◽  
Vol 119 (14) ◽  
pp. 145702 ◽  
Author(s):  
Pramod Reddy ◽  
Shun Washiyama ◽  
Felix Kaess ◽  
M. Hayden Breckenridge ◽  
Luis H. Hernandez-Balderrama ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
High Temperature ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Band Offsets ◽  
Pressure Chemical

Elaboration of Monocrystalline Si Thin Film on 3C-SiC(100)/Si Epilayers by Low Pressure Chemical Vapor Deposition

2012 ◽  
Vol 711 ◽  
pp. 61-65 ◽  
Author(s):  
Sai Jiao ◽  
Marc Portail ◽  
Jean François Michaud ◽  
Marcin Zielinski ◽  
Thierry Chassagne ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Structural Properties ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Growth Conditions ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Micro Electro Mechanical Systems ◽  
Pressure Chemical

The growth of continuous silicon monocrystalline thin films on 3C-SiC epilayers deposited on silicon substrates is presented in this study. Such heterostructures can be beneficial for the fabrication of Micro Electro Mechanical Systems or electronic applications. The elaboration of these heterostructures was carried out using Low Pressure Chemical Vapor Deposition. X-ray Diffraction, Fourier Transformed Infra-Red spectroscopy and Scanning Electron Microscopy have been used to investigate the structural properties of Si epilayers and their dependence on growth conditions. Monocrystalline Si (110) films are obtained on 3CSiC(100)/Si (100) substrates, only when using growth temperatures close to 850°C. The strong influence of the underlying 3C-SiC film on the final structural properties of Si epilayer is evidenced.

Low pressure chemical vapor deposition of silicon nitride using the environmentally friendly tris(dimethylamino)silane precursor

1996 ◽  
Vol 11 (6) ◽  
pp. 1483-1488 ◽  
Author(s):  
R. A. Levy ◽  
X. Lin ◽  
J. M. Grow ◽  
H. J. Boeglin ◽  
R. Shalvoy
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Environmentally Benign ◽  
Silicon Nitride Films ◽  
Pressure Chemical ◽  
Phase Nucleation ◽  
Silane Precursor

This study investigates the use of the environmentally benign precursor tri(dimethylamino)silane (TDMAS) with NH3 to synthesize silicon nitride films by low pressure chemical vapor deposition. The growth kinetics are investigated as a function of deposition temperature, total pressure, and NH3/TDMAS flow ratios. The deposits are found to be essentially stoichiometric and to contain ∼5 at. % carbon when appropriate NH3 concentrations are present. The films are found in all cases to be amorphous and highly tensile. For optimized processing conditions, values of the refractive index are close to those reported for Si3N4. The film density is observed to increase with higher deposition temperatures up to 800 °C and then decrease due to the onset of gas phase nucleation effects. This behavior is readily reflected in the etch rate of those films. FTIR spectra reveal the presence of hydrogen even at high deposition temperatures (900 °C). Hardness and Young's modulus of the films are seen to increase with higher deposition temperatures, reaching saturation values near 20 and 185 GPa, respectively, above 800 °C.

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