Simulation of the Effect of GaN Buffer Layer Doped with Iron Fe and Carbon C on the DC Static Characteristics of Normally Open HEMT AlGaN/AlN/GaN Transistor

2021 ◽  
Author(s):  
Than Phyo Kyaw ◽  
Vladimir Egorkin ◽  
Victor Korneev ◽  
Myo Min Thant
Keyword(s):  
Buffer Layer ◽  
Static Characteristics ◽  
Gan Buffer Layer

The Influence of Growth Temperature on Oxygen Concentration in GaN Buffer Layer

2008 ◽  
Vol 1068 ◽  
Author(s):  
Ewa Dumiszewska ◽  
Wlodek Strupinski ◽  
Piotr Caban ◽  
Marek Wesolowski ◽  
Dariusz Lenkiewicz ◽  
...  
Keyword(s):  
High Temperature ◽  
Buffer Layer ◽  
Oxygen Concentration ◽  
Growth Temperature ◽  
Low Temperatures ◽  
Buffer Layers ◽  
Crystalline Quality ◽  
Temperature Growth ◽  
Gan Buffer Layer

ABSTRACTThe influence of growth temperature on oxygen incorporation into GaN epitaxial layers was studied. GaN layers deposited at low temperatures were characterized by much higher oxygen concentration than those deposited at high temperature typically used for epitaxial growth. GaN buffer layers (HT GaN) about 1 μm thick were deposited on GaN nucleation layers (NL) with various thicknesses. The influence of NL thickness on crystalline quality and oxygen concentration of HT GaN layers were studied using RBS and SIMS. With increasing thickness of NL the crystalline quality of GaN buffer layers deteriorates and the oxygen concentration increases. It was observed that oxygen atoms incorporated at low temperature in NL diffuse into GaN buffer layer during high temperature growth as a consequence GaN NL is the source for unintentional oxygen doping.

Effect of N/Ga Flux Ratio in GaN Buffer Layer Growth by MBE on (0001) Sapphire on Defect Formation in the GaN Main Layer

1999 ◽  
Vol 572 ◽  
Author(s):  
S. Ruvimov ◽  
Z. Liliental-Weber ◽  
J. Washburn ◽  
Y. Kim ◽  
G. S. Sudhir ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Buffer Layer ◽  
Defect Formation ◽  
Flux Ratio ◽  
Growth Conditions ◽  
Buffer Layers ◽  
Simultaneous Increase ◽  
Growth Stages ◽  
Dislocation Generation ◽  
Gan Buffer Layer

ABSTRACTTransmission electron microscopy was employed to study the effect of N/Ga flux ratio in the growth of GaN buffer layers on the structure of GaN epitaxial layers grown by molecular-beamepitaxy (MBE) on sapphire. The dislocation density in GaN layers was found to increase from 1×1010 to 6×1010 cm−2 with increase of the nitrogen flux from 5 to 35 sccm during the growth of the GaN buffer layer with otherwise the same growth conditions. All GaN layers were found to contain inversion domain boundaries (IDBs) originated at the interface with sapphire and propagated up to the layer surface. Formation of IDBs was often associated with specific defects at the interface with the substrate. Dislocation generation and annihilation were shown to be mainly growth-related processes and, hence, can be controlled by the growth conditions, especially during the first growth stages. The decrease of electron Hall mobility and the simultaneous increase of the intensity of “green” luminescence with increasing dislocation density suggest that dislocation-related deep levels are created in the bandgap.

Investigation of the effect of doping the GaN buffer layer with carbon on the avalanche breakdown effect of normally open HEMT AlGaN/AlN/GaN transistors

2021 ◽  
Author(s):  
Than Phyo Kyaw
Keyword(s):  
Buffer Layer ◽  
Layer Thickness ◽  
Breakdown Voltage ◽  
Carbon Doping ◽  
Avalanche Breakdown ◽  
Gate Length ◽  
20 Nm ◽  
Gan Buffer Layer ◽  
Effect Of Doping

The influence of the GaN buffer layer doped with carbon on the avalanche breakdown effect of normally open HEMT AlGaN / AlN / GaN transistors was studied. The avalanche breakdown was simulated in a structure where the gate length is LG = 0.3 mkm, the distance between the source and gate is LSG = 1.5 mkm, and the distance between the gate and drain is LGD = 2.2 mkm. For modeling, consider a layer doped with carbon, the thickness of which is 0.3 mkm, and the layer is located at a distance of 20 nm from the channel. The Simulation showed that with an increase in the concentration of carbon doping of the buffer, the breakdown voltage increases in the range UB = 225 – 360 (V). When the layer thickness changes to 0.4 mkm, the breakdown voltage increases in the range UB = 230 – 446 (V). For a structure where the gate length is LG = 0.8 mkm, the distance between the source and the gate is LSG = 1.0 mkm, the distance between the gate and drain is LGD = 3.0 mkm, the breakdown voltage increases in the range UB = 300 – 622 (V).

Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High-Electron-Mobility Transistors

2019 ◽  
Vol 45 (8) ◽  
pp. 761-764
Author(s):  
T. V. Malin ◽  
D. S. Milakhin ◽  
I. A. Aleksandrov ◽  
V. E. Zemlyakov ◽  
V. I. Egorkin ◽  
...  
Keyword(s):  
Buffer Layer ◽  
High Resistance ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Gan Buffer Layer

Negative transconductance effect in p-GaN gate AlGaN/GaN HEMTs by traps in unintentionally doped GaN buffer layer

2019 ◽  
Vol 28 (10) ◽  
pp. 107301 ◽  
Author(s):  
Mei Ge ◽  
Qing Cai ◽  
Bao-Hua Zhang ◽  
Dun-Jun Chen ◽  
Li-Qun Hu ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Gan Hemts ◽  
Gan Buffer Layer

scholarly journals Effects of GaN Buffer Resistance on the Device Performances of AlGaN/GaN HEMTs

Crystals ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 848
Author(s):  
Ki-Sik Im ◽  
Jae-Hoon Lee ◽  
Yeo Jin Choi ◽  
Sung Jin An
Keyword(s):  
Buffer Layer ◽  
Deep Level ◽  
Low Frequency ◽  
High Electron Mobility Transistors ◽  
Frequency Noise ◽  
High Electron ◽  
Electron Mobility Transistors ◽  
Noise Characteristics ◽  
Temperature Method ◽  
Gan Buffer Layer

We investigated the effects of GaN buffer resistance of AlGaN/GaN high-electron-mobility transistors (HEMTs) on direct current (DC), low-frequency noise (LFN), and pulsed I-V characterization performances. The devices with the highest GaN buffer resistance were grown on sapphire substrate using two-step growth temperature method without additional compensation doping. The proposed device exhibited the degraded off-state leakage current due to the improved GaN buffer quality compared to the reference devices with relative low buffer resistance, which is confirmed by high resolution X-ray diffraction (HRXRD). However, the proposed device with deep-level defects in GaN buffer layer showed the reduced hysteresis (∆Vth), increased breakdown voltage (BV), and enhanced pulse I-V characteristics. Regardless of GaN buffer resistance, all devices clearly showed 1/f behavior with carrier number fluctuations (CNF) at on-state but followed 1/f2 characteristic at off-state. From the 1/f2 noise characteristics, the extracted trap time constant (τi) of the proposed device can be obtained to be 10 ms, which is shorter than those of the reference devices because of the full compensation of deep-level defects in the GaN buffer layer.

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