Low Temperature Oxide Passivation for Via-last/backside process

2021 ◽  
Author(s):  
Serine Soh Siew Boon ◽  
Soon Wee Ho ◽  
Wang Zong Bin ◽  
Chia Ching Keat
Keyword(s):  
Low Temperature ◽  
Temperature Oxide

Experimental Studies of New GaAs Metal/Insulator/p-n+Switches Using Low Temperature Oxide

2002 ◽  
Vol 25 (3) ◽  
pp. 233-237
Author(s):  
K. F. Yarn
Keyword(s):  
Low Temperature ◽  
Negative Differential Resistance ◽  
Doping Concentration ◽  
Experimental Studies ◽  
Differential Resistance ◽  
Switching Behavior ◽  
Metal Insulator ◽  
Turn On ◽  
Temperature Oxide ◽  
Phase Chemical

First observation of switching behavior is reported in GaAs metal-insulator-p-n+structure, where the thin insulator is grown at low temperature by a liquid phase chemical-enhanced oxide (LPECO) with a thickness of 100 Å. A significant S-shaped negative differential resistance (NDR) is shown to occur that originates from the regenerative feedback in a tunnel metal/insulator/semiconductor (MIS) interface andp-n+junction. The influence of epitaxial doping concentration on the switching and holding voltages is investigated. The switching voltages are found to be decreased when increasing the epitaxial doping concentration, while the holding voltages are almost kept constant. A high turn-off/turn-on resistance ratio up to105has been obtained.

Thermochemistry of Hf-Zirconolite, CaHf Ti2O7

1999 ◽  
Vol 556 ◽  
Author(s):  
Robert L. Putnam ◽  
Alexandra Navrotsky ◽  
Brian F. Woodfield ◽  
Jennifer L. Shapiro ◽  
Rebecca Stevens ◽  
...  
Keyword(s):  
Heat Capacity ◽  
High Temperature ◽  
Low Temperature ◽  
Adiabatic Calorimetry ◽  
Formation Enthalpy ◽  
Solution Calorimetry ◽  
Oxide Melt ◽  
High Temperature Oxide ◽  
Temperature Oxide ◽  
Capacity Data

AbstractThe formation enthalpy, - 3752.3 ± 4.7 kJ·mol−1, of Hf-zirconolite, CaHfTi2O7, was obtained using high temperature oxide-melt solution calorimetry. Combined with heat capacity data obtained using low temperature adiabatic calorimetry we report the heat capacity (Cp) and the standard molar formation energetics (ΔH°f. elements, Δ S°T, and ΔG°f. elements)for Hf-zirconolite from T = 298.15 K to T = 1500 K. Comparison of Hf-zirconolite with Zr-zirconolite is made.

The Electrical Properties of Polyoxide Depending on the Polycrystalline-Si Formation Conditions

1990 ◽  
Vol 182 ◽  
Author(s):  
Kyoung-Soo Yi ◽  
Deok-Ho Cho ◽  
Jeong Yong Lee ◽  
Kee-Soo Nam ◽  
Sang-Won Kang ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Dielectric Property ◽  
Electrical Properties ◽  
Low Temperature ◽  
Electric Field ◽  
Transmission Electron ◽  
Formation Conditions ◽  
Temperature Oxide ◽  
Amorphous Si ◽  
Current Electric Field

AbstractPrior to growth of polyoxide, amorphous-Si with a cap of low temperature oxide was annealed to improve the dielectric property of polyoxide. Current-electric field, critical electric field, critical electric field histogram, and Fowler-Nordheim conduction plot were evaluated. The interface of polyoxide and poly-Si was observed with a transmission electron microscope. The annealing of the amorphous-Si prior to oxidation was effective to improve the dielectric property of the polyoxide.

Low Temperature Oxide Deposition Equipment

1977 ◽  
Vol 14 (2) ◽  
pp. 125-128
Author(s):  
T. E. Price
Keyword(s):  
Low Temperature ◽  
Silicon Dioxide ◽  
Chemical Reactions ◽  
Oxide Deposition ◽  
Device Applications ◽  
Temperature Oxide

The equipment described uses silane to deposit silicon dioxide at 400°C on to a substrate 50 mm in diameter; the oxide may be doped with phosphorus or boron. Details are given of the chemical reactions involved, the construction and operation together with some examples of possible device applications.

scholarly journals Low temperature oxide desorption in GaAs (111)A substrates

2013 ◽  
Vol 537 ◽  
pp. 70-75 ◽  
Author(s):  
David Fuster ◽  
Laia Ginés ◽  
Yolanda González ◽  
Jesús Herranz ◽  
Luisa González
Keyword(s):  
Low Temperature ◽  
Temperature Oxide

Low-Temperature Oxide Wafer Bonding for 3-D Integration: Chemistry of Bulk Oxide Matters

2014 ◽  
Vol 27 (3) ◽  
pp. 426-430 ◽  
Author(s):  
Wei Lin ◽  
Leathen Shi ◽  
Yiping Yao ◽  
Anita Madan ◽  
Teresa Pinto ◽  
...  
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Temperature Oxide

Low Temperature PECVD Silicon Oxide For Devices And Circuits On Flexible Substrates

2003 ◽  
Vol 769 ◽  
Author(s):  
Mark Meitine ◽  
Andrei Sazonov
Keyword(s):  
Low Temperature ◽  
Electronic Properties ◽  
Silicon Oxide ◽  
Gate Dielectric ◽  
Dielectric Breakdown ◽  
Mos Capacitors ◽  
Plastic Substrates ◽  
Temperature Oxide ◽  
Stress Uniformity ◽  
Deposited Films

AbstractThe aim of this research is to develop low temperature gate dielectric/passivation layer for μc-Si and poly-Si based devices and circuits compatible with plastic substrates.The PECVD silicon oxide films were fabricated from mixture of silane and nitrous oxide at 250 °C, 120 °C and 75 °C. Helium, argon and nitrogen were used as diluent gases to optimize density, stress, uniformity, and electronic properties.Chemical composition and bonding in the films were studied by FTIR spectroscopy. The absorption peak at 1075-1080 cm-1 observed in the spectrum of each film corresponds to SiO2 stretching mode. No presence of SiH stretching or NH-stretching vibrations was found in the FTIR spectra of the samples.Film uniformity was varied from 1.44 % to 5.60 % for 3“×3” area. Four wafers were processed at the same time. The deposited films have compressive stress varied from 0.063 GPa to 0.117 GPa. Respective film density is in the range from 1.63 g/cm3 to 1.77 g/cm3.The electronic properties were studied on MOS capacitors with 200 nm thick SiOx. The dielectric permittivity was in the range between 2.03 and 3.57. The dielectric breakdown at 9 MV/cm was observed for the films deposited at 120 °C. The films deposited at higher temperatures are characterized by lower leakage current density, which was 3.7.10-10 A/cm2 for the sample deposited at 250 °C, 9.10-9 A/cm2 for 120 °C, and 2.2.10-8 A/cm2 for 75 °C at 5 MV/cm.The a-Si:H based TFTs were fabricated using low temperature oxide as gate dielectric. TFTs demonstrate threshold voltage (3.02 – 4.12 V) and mobility (0.12 – 0.59 cm2/Vs) comparing with those using silicon nitride.

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