Low-Temperature Oxide/Metal/Oxide Multilayer Films as Highly Transparent Conductive Electrodes for Optoelectronic Devices

2021 ◽  
Author(s):  
Yunlong Zhang ◽  
Zhang Liu ◽  
Chengang Ji ◽  
Xinliang Chen ◽  
Guofu Hou ◽  
...  
Keyword(s):  
Low Temperature ◽  
Metal Oxide ◽  
Optoelectronic Devices ◽  
Multilayer Films ◽  
Temperature Oxide ◽  
Transparent Conductive Electrodes

Experimental Studies of New GaAs Metal/Insulator/p-n+Switches Using Low Temperature Oxide

2002 ◽  
Vol 25 (3) ◽  
pp. 233-237
Author(s):  
K. F. Yarn
Keyword(s):  
Low Temperature ◽  
Negative Differential Resistance ◽  
Doping Concentration ◽  
Experimental Studies ◽  
Differential Resistance ◽  
Switching Behavior ◽  
Metal Insulator ◽  
Turn On ◽  
Temperature Oxide ◽  
Phase Chemical

First observation of switching behavior is reported in GaAs metal-insulator-p-n+structure, where the thin insulator is grown at low temperature by a liquid phase chemical-enhanced oxide (LPECO) with a thickness of 100 Å. A significant S-shaped negative differential resistance (NDR) is shown to occur that originates from the regenerative feedback in a tunnel metal/insulator/semiconductor (MIS) interface andp-n+junction. The influence of epitaxial doping concentration on the switching and holding voltages is investigated. The switching voltages are found to be decreased when increasing the epitaxial doping concentration, while the holding voltages are almost kept constant. A high turn-off/turn-on resistance ratio up to105has been obtained.

scholarly journals Low-temperature-processed metal oxide electron transport layers for efficient planar perovskite solar cells

Rare Metals ◽  
2021 ◽  
Author(s):  
Jia-Xing Song ◽  
Xin-Xing Yin ◽  
Zai-Fang Li ◽  
Yao-Wen Li
Keyword(s):  
Solar Cells ◽  
Electron Transport ◽  
Low Temperature ◽  
Metal Oxide ◽  
Low Cost ◽  
Perovskite Solar Cells ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Future Research ◽  
Low Temperature Preparation

Abstract As a promising photovoltaic technology, perovskite solar cells (pero-SCs) have developed rapidly over the past few years and the highest power conversion efficiency is beyond 25%. Nowadays, the planar structure is universally popular in pero-SCs due to the simple processing technology and low-temperature preparation. Electron transport layer (ETL) is verified to play a vital role in the device performance of planar pero-SCs. Particularly, the metal oxide (MO) ETL with low-cost, superb versatility, and excellent optoelectronic properties has been widely studied. This review mainly focuses on recent developments in the use of low-temperature-processed MO ETLs for planar pero-SCs. The optical and electronic properties of widely used MO materials of TiO2, ZnO, and SnO2, as well as the optimizations of these MO ETLs are briefly introduced. The commonly used methods for depositing MO ETLs are also discussed. Then, the applications of different MO ETLs on pero-SCs are reviewed. Finally, the challenge and future research of MO-based ETLs toward practical application of efficient planar pero-SCs are proposed. Graphical abstract

Oxide nanopowders from the low-temperature processing of metal oxide sols and their application as gas-sensing materials

2006 ◽  
Vol 118 (1-2) ◽  
pp. 105-109 ◽  
Author(s):  
Mauro Epifani ◽  
Elisabetta Comini ◽  
Raül Díaz ◽  
Jordi Arbiol ◽  
Pietro Siciliano ◽  
...  
Keyword(s):  
Low Temperature ◽  
Metal Oxide ◽  
Gas Sensing ◽  
Low Temperature Processing

scholarly journals Graphene-Based Semiconductor Heterostructures for Photodetectors

Micromachines ◽  
2018 ◽  
Vol 9 (7) ◽  
pp. 350 ◽  
Author(s):  
Dong Shin ◽  
Suk-Ho Choi
Keyword(s):  
Optical Properties ◽  
High Performance ◽  
Optoelectronic Devices ◽  
Semiconductor Heterostructures ◽  
Device Physics ◽  
Electrical And Optical Properties ◽  
Design Performance ◽  
Future Challenges ◽  
Transparent Conductive Electrodes

Graphene transparent conductive electrodes are highly attractive for photodetector (PD) applications due to their excellent electrical and optical properties. The emergence of graphene/semiconductor hybrid heterostructures provides a platform useful for fabricating high-performance optoelectronic devices, thereby overcoming the inherent limitations of graphene. Here, we review the studies of PDs based on graphene/semiconductor hybrid heterostructures, including device physics/design, performance, and process technologies for the optimization of PDs. In the last section, existing technologies and future challenges for PD applications of graphene/semiconductor hybrid heterostructures are discussed.

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