Fabrication of 20 nm deep silicon dioxide channel using electron beam lithography for manipulation of DNA molecules

2012 ◽  
Author(s):  
Maryam Alsadat Rad ◽  
Kamarulazizi Ibrahim
Keyword(s):  
Electron Beam ◽  
Silicon Dioxide ◽  
Electron Beam Lithography ◽  
Dna Molecules ◽  
20 Nm

Spot Electron-Beam Lithography as a Novel Method of High Resolution Pattern Nanofabrication

2014 ◽  
Vol 215 ◽  
pp. 459-461
Author(s):  
Alexander S. Samardak ◽  
Margarita V. Anisimova ◽  
Alexey V. Ognev ◽  
Vadim Yu. Samardak ◽  
Liudmila A. Chebotkevich
Keyword(s):  
Electron Beam ◽  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Electron Beam Lithography ◽  
The Novel ◽  
Practical Applications ◽  
Novel Method ◽  
20 Nm ◽  
Scanning Electron

We present a novel method of pattern nanofabrication with high resolution and small shape defects using the traditional electron-beam lithography (EBL) or only a scanning electron microscope (SEM). Our method of Spot EBL is extremely fast, highly scalable on big areas, capable of sub-20 nm resolution and fabrication of polymer patterns with complicated shapes. We show the nanostructure images fabricated by Spot EBL and propose practical applications of the novel method.

Fabrication of Silicon Nanowires by Electron Beam Lithography and Thermal Oxidation Size Reduction Method

2013 ◽  
Vol 832 ◽  
pp. 415-418 ◽  
Author(s):  
Mohammad Nuzaihan Md Nor ◽  
Uda Hashim ◽  
Taib Nazwa ◽  
Tijjani Adam
Keyword(s):  
Electron Beam ◽  
Thermal Oxidation ◽  
Silicon Nanowires ◽  
Electron Beam Lithography ◽  
Reduction Method ◽  
Size Reduction ◽  
Simple Method ◽  
Force Microscopy ◽  
Initial Silicon ◽  
20 Nm

A simple method for the fabrication of silicon nanowires using Electron Beam Lithography (EBL) combined with thermal oxidation size reduction method is presented. EBL is used to define the initial silicon nanowires of dimensions approximately 100 nm. Size-reduction method is employed for reaching true nanoscale of dimensions approximately 20 nm. Dry oxidation of silicon is well investigated process for self-limited size-reduction of silicon nanowires. In this paper, successful size reduction of silicon nanowires is presented and surface topography characterizations using Atomic Force Microscopy (AFM) are reported.

Toward sub-20 nm hybrid nanofabrication by combining the molecular ruler method and electron beam lithography

2010 ◽  
Vol 21 (49) ◽  
pp. 495304 ◽  
Author(s):  
C B Li ◽  
T Hasegawa ◽  
H Tanaka ◽  
H Miyazaki ◽  
S Odaka ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Molecular Ruler ◽  
20 Nm

Fabrication of 30-nm-Pitched CoPt Magnetic Dot Arrays Using 30-keV-Electron Beam Lithography and Ion Milling for Patterned Media

2013 ◽  
Vol 534 ◽  
pp. 118-121 ◽  
Author(s):  
Zulfakri bin Mohamad ◽  
Rosalena Irma Alip ◽  
Takuya Komori ◽  
Takashi Akahane ◽  
Hui Zhang ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Ion Milling ◽  
Si Substrate ◽  
Patterned Media ◽  
Fine Pitch ◽  
20 Nm ◽  
Magnetic Dot

CoPt magnetic dot arrays with a fine pitch of 30 nm have been fabricated using electron beam (EB) lithography and ion milling. The possibility to ion-mill CoPt film using EB drawn calixarene resist pattern as a mask has been studied. We formed 30 nm pitch resist dot arrays with a dot diameter of 20 nm using 30-keV-EB lithography with calixarene resist. The resist dot arrays were ion-milled for 4 min using 200-eV Ar ion milling to fabricate CoPt dot arrays on a Si substrate. We fabricated fine pitched CoPt magnetic dot arrays with a diameter of 22-35 nm and a pitch of 30-150 nm. Results show that the ion-milled CoPt dot diameter increased with the dot pitch while the resist dot had a similar diameter of 20 nm.

Comparison of Nanosized Pattern of Calixarene and ZEP520 Resists by Using Energy Deposition Distribution

2013 ◽  
Vol 534 ◽  
pp. 107-112
Author(s):  
Hui Zhang ◽  
Takuya Komori ◽  
Zulfakri bin Mohamad ◽  
You Yin ◽  
Sumio Hosaka
Keyword(s):  
Electron Beam ◽  
Energy Density ◽  
Probe Beam ◽  
Electron Beam Lithography ◽  
Capillary Force ◽  
Energy Deposition ◽  
Critical Energy ◽  
Critical Energy Density ◽  
20 Nm ◽  
Positive Resist

We numerically modeled the process of exposure and development of the calixarene negative resist and ZEP520 positive resist in electron beam lithography (EBL) in order to understand the limitation of nanopatterning of these two resists and to improve the resolution of the patterning. From the calculation of energy deposition distribution (EDD) in resist at various beam diameters, it is obvious that the fine probe beam with a diameter of 2 nm and thin resist should be adopted for formation of very fine dots. The simulation of resist development profile indicates that a dot size of 2 nm with a pitch of 20 nm can even be obtained at a higher critical energy density by using calixarene resist, while it cannot form the small pattern by using the ZEP520 resist because of the capillary force.

A novel PMMA/NEB bilayer process for sub-20 nm gold nanoslits by a selective electron beam lithography and dry etch

2017 ◽  
Vol 172 ◽  
pp. 13-18 ◽  
Author(s):  
Xiaqi Huang ◽  
Jinhai Shao ◽  
ChialinTsou ◽  
Sichao Zhang ◽  
Bingrui Lu ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
20 Nm ◽  
Dry Etch
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