Fabrication of 30-nm-Pitched CoPt Magnetic Dot Arrays Using 30-keV-Electron Beam Lithography and Ion Milling for Patterned Media

2013 ◽  
Vol 534 ◽  
pp. 118-121 ◽  
Author(s):  
Zulfakri bin Mohamad ◽  
Rosalena Irma Alip ◽  
Takuya Komori ◽  
Takashi Akahane ◽  
Hui Zhang ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Ion Milling ◽  
Si Substrate ◽  
Patterned Media ◽  
Fine Pitch ◽  
20 Nm ◽  
Magnetic Dot

CoPt magnetic dot arrays with a fine pitch of 30 nm have been fabricated using electron beam (EB) lithography and ion milling. The possibility to ion-mill CoPt film using EB drawn calixarene resist pattern as a mask has been studied. We formed 30 nm pitch resist dot arrays with a dot diameter of 20 nm using 30-keV-EB lithography with calixarene resist. The resist dot arrays were ion-milled for 4 min using 200-eV Ar ion milling to fabricate CoPt dot arrays on a Si substrate. We fabricated fine pitched CoPt magnetic dot arrays with a diameter of 22-35 nm and a pitch of 30-150 nm. Results show that the ion-milled CoPt dot diameter increased with the dot pitch while the resist dot had a similar diameter of 20 nm.

Coercive Force Enhanced by Nanometer-Sizing of Magnetic Column and Measured by X-Ray Magnetic Circular Dichroism (XMCD)

2012 ◽  
Vol 490-495 ◽  
pp. 292-295 ◽  
Author(s):  
Sumio Hosaka ◽  
Zulfakri bin Mohamad ◽  
Takashi Akahane ◽  
You Yin ◽  
Hiroshi Sakurai ◽  
...  
Keyword(s):  
Electron Beam ◽  
Circular Dichroism ◽  
Coercive Force ◽  
Glass Substrate ◽  
Magnetic Circular Dichroism ◽  
Ion Milling ◽  
Patterned Media ◽  
X Ray ◽  
20 Nm ◽  
Circular Dichroïsm

We have studied the possibility to form fine magnetic column arrays using 30-keV-electron beam (EB) drawing with thin calixarene resist and 200-eV-Ar ion milling, and nanometer-sizing effect of the magnetic column on the corecive force for patterned media. We achieved 20-nm-sized resist dot arrays on PtCo magnetic and thin metals layers on glass substrate. We formed fine magnetic column arrays with a diameter of 39 to 106 nm and a space of about 100 nm using the resist pattern by the 200-eV Ar ion-milling. Using the nano magnetic column arrays, the hysteresis were measured by X-ray magnetic circular dichroism (XMCD) with an energy of 11.57 keV, which corresponds to an energy edge of Pt-L3. It is clarified that a coercive force of the nanometer-sized magnetic column increased as the diameter decreased.

Fabrication of Nanometer Sized Si Dot Arrays Using Ar Ion Milling with Calixarene Resist Dot Arrays

2010 ◽  
Vol 459 ◽  
pp. 116-119 ◽  
Author(s):  
Takuro Tamura ◽  
Yasunari Tanaka ◽  
Takashi Akahane ◽  
You Yin ◽  
Sumio Hosaka
Keyword(s):  
Electron Beam ◽  
Dry Etching ◽  
Ion Milling ◽  
Si Substrate ◽  
Etching Technique ◽  
Nano Scale ◽  
Vertical Milling ◽  
Scale Structures ◽  
20 Nm

In this study, we investigated the possibility of forming the fine Si dot arrays by means of electron beam (EB) lithography and dry etching technique for the future’s devices with nano-scale structures. We examined the properties of Ar ion milling for the fabrication of nanometer sized Si dot arrays on a Si substrate. We have succeeded in forming 40 nm pitched Si dot arrays with a diameter of <20 nm using dot array patterns of the calixarene resist as a mask. We also obtained the Ar ion milling property that there exists the horizontal milling rate as well as the vertical milling rate. We formed Si dot arrays with a dot diameter of about 10 nm using this property. It was clarified that Ar ion milling and EB lithography with calixarene resist has the potential to form Si nano dot arrays for the nano devices.

Fabrication of 25-nm-Pitched CoPt Magnetic Dot Arrays Using 30-keV-Electron Beam Drawing, RIE and Ion-Milling

2013 ◽  
Vol 596 ◽  
pp. 92-96 ◽  
Author(s):  
Zulfakri bin Mohamad ◽  
Miftakhul Huda ◽  
Takuya Komori ◽  
Rosalena Irma Alip ◽  
Hui Zhang ◽  
...  
Keyword(s):  
Electron Beam ◽  
Carbon Film ◽  
Magnetic Layer ◽  
Magnetic Film ◽  
Carbon Layer ◽  
Ion Milling ◽  
Patterned Media ◽  
Hard Mask ◽  
Fine Pattern ◽  
Magnetic Dot

In this study, we have fabricated 25-nm-pitched magnetic dot arrays using electron beam lithography (EBL), reactive ion etching (RIE) and ion-milling. We have used double mask method with calixarene resist and carbon film as a hard mask to transfer fine pattern to CoPt magnetic film. We transferred the calixarene resist dot arrays to carbon layer using O2gas in RIE as a first mask, then transferred the carbon dot arrays to CoPt magnetic layer as a second hard mask using ion-milling. We demonstrated that double mask method is very suitable to fabricate 25-nm-pitched magnetic dot arrays with a dot size of 18 nm and a height of 15 nm for patterned media with 1 Tb/in2.

Estimation of Nanometer-Sized EB Patterning Using Energy Deposition Distribution in Monte Carlo Simulation

2011 ◽  
Vol 497 ◽  
pp. 127-132 ◽  
Author(s):  
Hui Zhang ◽  
Takuro Tamura ◽  
You Yin ◽  
Sumio Hosaka
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Electron Beam ◽  
Energy Distribution ◽  
Electron Energy ◽  
Electron Beam Lithography ◽  
Energy Deposition ◽  
Si Substrate ◽  
Positive Resist

We have studied on theoretical electron energy deposition in thin resist layer on Si substrate for electron beam lithography. We made Monte Carlo simulation to calculate the energy distribution and to consider formation of nanometer sized pattern regarding electron energy, resist thickness and resist type. The energy distribution in 100 nm-thick resist on Si substrate were calculated for small pattern. The calculations show that 4 nm-wide pattern will be formed when resist thickness is less than 30 nm. Furthermore, a negative resist is more suitable than positive resist by the estimation of a shape of the energy distribution.

Fabrication of fine pitch gratings by holography, electron beam lithography and nano-imprint lithography

2007 ◽  
Author(s):  
Darren Goodchild ◽  
Alexei Bogdanov ◽  
Simon Wingar ◽  
Bill Benyon ◽  
Nak Kim ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Imprint Lithography ◽  
Fine Pitch ◽  
Nano Imprint

Measurement of Arrays of Dots Produced by Electron-beam Lithography

2006 ◽  
Vol 961 ◽  
Author(s):  
Philip C. Hoyle ◽  
Ian Laidler
Keyword(s):  
Electron Beam ◽  
Standard Deviation ◽  
Electron Beam Lithography ◽  
Tool Development ◽  
Patterned Media ◽  
Tool Performance ◽  
Scanning Electron

ABSTRACTElectron-beam mastering of templates for patterned media presents a challenge to the toolmaker to simultaneously meet throughput, resolution and placement requirements. Fundamental to tool development is the ability to measure the placement to true grid of shapes as small as 7 nm over the whole substrate. In this article we describe a technique, consisting of acquiring and analyzing scanning electron (SE) micrographs, for measuring the placement errors in lithography similar to that required for patterned media, albeit over a few square microns and without scale and orthogonality components. The method enabled the measurement of placement errors of dots in an array with accuracy down to about 2 nm. The technique was used to benchmark current X-Y tool performance and the smallest 3× standard deviation of placement error was found to be around 4.5 nm. A clearer understanding of the necessary tool improvements was obtained. The use of the technique as basis for measuring errors to true grid over the entire substrate is discussed.

Spot Electron-Beam Lithography as a Novel Method of High Resolution Pattern Nanofabrication

2014 ◽  
Vol 215 ◽  
pp. 459-461
Author(s):  
Alexander S. Samardak ◽  
Margarita V. Anisimova ◽  
Alexey V. Ognev ◽  
Vadim Yu. Samardak ◽  
Liudmila A. Chebotkevich
Keyword(s):  
Electron Beam ◽  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Electron Beam Lithography ◽  
The Novel ◽  
Practical Applications ◽  
Novel Method ◽  
20 Nm ◽  
Scanning Electron

We present a novel method of pattern nanofabrication with high resolution and small shape defects using the traditional electron-beam lithography (EBL) or only a scanning electron microscope (SEM). Our method of Spot EBL is extremely fast, highly scalable on big areas, capable of sub-20 nm resolution and fabrication of polymer patterns with complicated shapes. We show the nanostructure images fabricated by Spot EBL and propose practical applications of the novel method.

Fabrication of Silicon Nanowires by Electron Beam Lithography and Thermal Oxidation Size Reduction Method

2013 ◽  
Vol 832 ◽  
pp. 415-418 ◽  
Author(s):  
Mohammad Nuzaihan Md Nor ◽  
Uda Hashim ◽  
Taib Nazwa ◽  
Tijjani Adam
Keyword(s):  
Electron Beam ◽  
Thermal Oxidation ◽  
Silicon Nanowires ◽  
Electron Beam Lithography ◽  
Reduction Method ◽  
Size Reduction ◽  
Simple Method ◽  
Force Microscopy ◽  
Initial Silicon ◽  
20 Nm

A simple method for the fabrication of silicon nanowires using Electron Beam Lithography (EBL) combined with thermal oxidation size reduction method is presented. EBL is used to define the initial silicon nanowires of dimensions approximately 100 nm. Size-reduction method is employed for reaching true nanoscale of dimensions approximately 20 nm. Dry oxidation of silicon is well investigated process for self-limited size-reduction of silicon nanowires. In this paper, successful size reduction of silicon nanowires is presented and surface topography characterizations using Atomic Force Microscopy (AFM) are reported.

Sign in / Sign up

Export Citation Format

Share Document