Comparison of Nanosized Pattern of Calixarene and ZEP520 Resists by Using Energy Deposition Distribution

2013 ◽  
Vol 534 ◽  
pp. 107-112
Author(s):  
Hui Zhang ◽  
Takuya Komori ◽  
Zulfakri bin Mohamad ◽  
You Yin ◽  
Sumio Hosaka
Keyword(s):  
Electron Beam ◽  
Energy Density ◽  
Probe Beam ◽  
Electron Beam Lithography ◽  
Capillary Force ◽  
Energy Deposition ◽  
Critical Energy ◽  
Critical Energy Density ◽  
20 Nm ◽  
Positive Resist

We numerically modeled the process of exposure and development of the calixarene negative resist and ZEP520 positive resist in electron beam lithography (EBL) in order to understand the limitation of nanopatterning of these two resists and to improve the resolution of the patterning. From the calculation of energy deposition distribution (EDD) in resist at various beam diameters, it is obvious that the fine probe beam with a diameter of 2 nm and thin resist should be adopted for formation of very fine dots. The simulation of resist development profile indicates that a dot size of 2 nm with a pitch of 20 nm can even be obtained at a higher critical energy density by using calixarene resist, while it cannot form the small pattern by using the ZEP520 resist because of the capillary force.

Estimation of Nanometer-Sized EB Patterning Using Energy Deposition Distribution in Monte Carlo Simulation

2011 ◽  
Vol 497 ◽  
pp. 127-132 ◽  
Author(s):  
Hui Zhang ◽  
Takuro Tamura ◽  
You Yin ◽  
Sumio Hosaka
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Electron Beam ◽  
Energy Distribution ◽  
Electron Energy ◽  
Electron Beam Lithography ◽  
Energy Deposition ◽  
Si Substrate ◽  
Positive Resist

We have studied on theoretical electron energy deposition in thin resist layer on Si substrate for electron beam lithography. We made Monte Carlo simulation to calculate the energy distribution and to consider formation of nanometer sized pattern regarding electron energy, resist thickness and resist type. The energy distribution in 100 nm-thick resist on Si substrate were calculated for small pattern. The calculations show that 4 nm-wide pattern will be formed when resist thickness is less than 30 nm. Furthermore, a negative resist is more suitable than positive resist by the estimation of a shape of the energy distribution.

Predictive of Electron Beam Focus Position by Metal Powder Temperature

2012 ◽  
Vol 217-219 ◽  
pp. 1779-1785
Author(s):  
Yun Xia Chen ◽  
Guo Hua Li ◽  
Xiao Jing Wang
Keyword(s):  
Electron Beam ◽  
Energy Density ◽  
Metal Powder ◽  
Molten Pool ◽  
Focal Spot ◽  
Interactive Effect ◽  
Critical Energy ◽  
Mechanical Analysis ◽  
Focus Position ◽  
Critical Energy Density

The equipment for measuring electron beam (EB) focus in electron beam produced by the effect of extremum temperature of powder molten pool caused by the interactive effect of electron beam with metal powder is described. The principle of operation of apparatus and examples of EB characteristics are presented. During electron beam processing, the mechanical analysis of metal powder molten pool temperature following focusing current are studied. As a result, the transferring point of critical energy density described by the peak of metal powder pool temperature can be obtained. Based on the temperature characteristics of critical energy density, the measuring concept of dynamic focal spot of electron beam is put forward in the paper. The method of measuring dynamic focal spot of electron beam will provide a new possibility for 3D scanning prototyping through changing focus position of EB.

Lithography below 100 nm

1983 ◽  
Vol 41 ◽  
pp. 96-99
Author(s):  
L. D. Jackel
Keyword(s):  
Spatial Distribution ◽  
Electron Beam ◽  
Electron Scattering ◽  
Electron Beam Lithography ◽  
Substrate Material ◽  
Local Electron ◽  
Electron Dose ◽  
Positive Resist ◽  
Exposure Process

Most production electron beam lithography systems can pattern minimum features a few tenths of a micron across. Linewidth in these systems is usually limited by the quality of the exposing beam and by electron scattering in the resist and substrate. By using a smaller spot along with exposure techniques that minimize scattering and its effects, laboratory e-beam lithography systems can now make features hundredths of a micron wide on standard substrate material. This talk will outline sane of these high- resolution e-beam lithography techniques.We first consider parameters of the exposure process that limit resolution in organic resists. For concreteness suppose that we have a “positive” resist in which exposing electrons break bonds in the resist molecules thus increasing the exposed resist's solubility in a developer. Ihe attainable resolution is obviously limited by the overall width of the exposing beam, but the spatial distribution of the beam intensity, the beam “profile” , also contributes to the resolution. Depending on the local electron dose, more or less resist bonds are broken resulting in slower or faster dissolution in the developer.

Spot Electron-Beam Lithography as a Novel Method of High Resolution Pattern Nanofabrication

2014 ◽  
Vol 215 ◽  
pp. 459-461
Author(s):  
Alexander S. Samardak ◽  
Margarita V. Anisimova ◽  
Alexey V. Ognev ◽  
Vadim Yu. Samardak ◽  
Liudmila A. Chebotkevich
Keyword(s):  
Electron Beam ◽  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Electron Beam Lithography ◽  
The Novel ◽  
Practical Applications ◽  
Novel Method ◽  
20 Nm ◽  
Scanning Electron

We present a novel method of pattern nanofabrication with high resolution and small shape defects using the traditional electron-beam lithography (EBL) or only a scanning electron microscope (SEM). Our method of Spot EBL is extremely fast, highly scalable on big areas, capable of sub-20 nm resolution and fabrication of polymer patterns with complicated shapes. We show the nanostructure images fabricated by Spot EBL and propose practical applications of the novel method.

Three-Dimensional Electron Energy Deposition Modeling of Cathodoluminescence Emission near Threading Dislocations in GaN and Electron-Beam Lithography Exposure Parameters for a PMMA Resist

2012 ◽  
Vol 18 (6) ◽  
pp. 1220-1228 ◽  
Author(s):  
Hendrix Demers ◽  
Nicolas Poirier-Demers ◽  
Matthew R. Phillips ◽  
Niels de Jonge ◽  
Dominique Drouin
Keyword(s):  
Electron Beam ◽  
Electron Energy ◽  
Electron Beam Lithography ◽  
Energy Deposition ◽  
Signal To Noise Ratio ◽  
Three Dimensional ◽  
Incident Electron ◽  
Incident Electron Energy ◽  
Threading Dislocations ◽  
Deposited Energy

AbstractThe Monte Carlo software CASINO has been expanded with new modules for the simulation of complex beam scanning patterns, for the simulation of cathodoluminescence (CL), and for the calculation of electron energy deposition in subregions of a three-dimensional (3D) volume. Two examples are presented of the application of these new capabilities of CASINO. First, the CL emission near threading dislocations in gallium nitride (GaN) was modeled. The CL emission simulation of threading dislocations in GaN demonstrated that a better signal-to-noise ratio was obtained with lower incident electron energy than with higher energy. Second, the capability to simulate the distribution of the deposited energy in 3D was used to determine exposure parameters for polymethylmethacrylate resist using electron-beam lithography (EBL). The energy deposition dose in the resist was compared for two different multibeam EBL schemes by changing the incident electron energy.

Electron-beam lithography of isolated trenches with chemically amplified positive resist

2002 ◽  
Author(s):  
Andrew R. Eckert ◽  
Richard J. Bojko ◽  
Harold Gentile ◽  
Robert Harris ◽  
Jay Jayashankar ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Chemically Amplified ◽  
Positive Resist

Fabrication of Silicon Nanowires by Electron Beam Lithography and Thermal Oxidation Size Reduction Method

2013 ◽  
Vol 832 ◽  
pp. 415-418 ◽  
Author(s):  
Mohammad Nuzaihan Md Nor ◽  
Uda Hashim ◽  
Taib Nazwa ◽  
Tijjani Adam
Keyword(s):  
Electron Beam ◽  
Thermal Oxidation ◽  
Silicon Nanowires ◽  
Electron Beam Lithography ◽  
Reduction Method ◽  
Size Reduction ◽  
Simple Method ◽  
Force Microscopy ◽  
Initial Silicon ◽  
20 Nm

A simple method for the fabrication of silicon nanowires using Electron Beam Lithography (EBL) combined with thermal oxidation size reduction method is presented. EBL is used to define the initial silicon nanowires of dimensions approximately 100 nm. Size-reduction method is employed for reaching true nanoscale of dimensions approximately 20 nm. Dry oxidation of silicon is well investigated process for self-limited size-reduction of silicon nanowires. In this paper, successful size reduction of silicon nanowires is presented and surface topography characterizations using Atomic Force Microscopy (AFM) are reported.

scholarly journals Initial Energy Density of √ s = 7 and 8 TeV p+p Collisions at the LHC

2016 ◽  
Author(s):  
Mate Csanad ◽  
Tamas Csorgo ◽  
Ze-Fang Jiang ◽  
Chun-Bin Yang
Keyword(s):  
Energy Density ◽  
Critical Energy ◽  
High Energy ◽  
Initial Energy ◽  
High Multiplicity ◽  
Initial Energy Density ◽  
Critical Energy Density ◽  
High Energy Collisions ◽  
8 Tev ◽  
Natural Description

Accelerating, exact, explicit and simple solutions of relativistic hydrodynamics allow for a simple and natural description of highly relativistic p+p collisions. These solutions yield a finite rapidity distribution, thus they lead to an advanced estimate of the initial energy density of high energy collisions. We show that such an advanced estimate yields an initial energy density in $\sqrt{s}=7$ and 8 TeV p+p collisions at LHC around or above the critical energy density from lattice QCD, and a corresponding initial temperature above the critical temperature from QCD and the Hagedorn temperature. This suggests that the collision energy of the LHC corresponds to a large enough initial energy density to create a non-hadronic perfect fluid even in pp collisions. %We also show, that several times the %critical energy density may have been reached in high multiplicity events, hinting at a non-hadronic medium created in %high multiplicity $\sqrt{s}=7$ and 8 TeV p+p collisions.

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