Kink effect characterization in AlGaN/GaN HEMTs by DC and drain current transient measurements

ABSTRACTThe current transient was studied on AlGaN/GaN HEMTs for RF power amplifiers under different temperatures. The current transient measurements include two different approaches. One is to measure the current transient from off-state (without bias) to a quiescent point (Q-point). Different transient behaviors were observed while switching to different Q-points. Another one is to measure the current transient from different currents to the Q-point of VDS = 28 V and ID = 100 mA/mm. The different currents before switching to Q-point of VDS = 28 V and ID = 100 mA/mm show the different transient characteristics. Most of the current transient demonstrates temperature independence in this study.

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Effect of Self-Heating on the Drain Current Transient Response in AlGaN/GaN HEMTs

IEEE Electron Device Letters ◽

10.1109/led.2014.2300856 ◽

2014 ◽

Vol 35 (3) ◽

pp. 345-347 ◽

Cited By ~ 17

Author(s):

Yamin Zhang ◽

Shiwei Feng ◽

Hui Zhu ◽

Chunsheng Guo ◽

Bing Deng ◽

...

Keyword(s):

Transient Response ◽

Drain Current ◽

Current Transient ◽

Self Heating ◽

Gan Hemts

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Two-dimensional simulation of the drain-current transient effect in GaAs MESFETs

Solid-State Electronics ◽

10.1016/0038-1101(91)90170-4 ◽

1991 ◽

Vol 34 (4) ◽

pp. 397-401 ◽

Cited By ~ 13

Author(s):

S.H. Lo ◽

C.P. Lee

Keyword(s):

Drain Current ◽

Current Transient ◽

Two Dimensional ◽

Transient Effect ◽

Dimensional Simulation

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Determination of AlGaN/GaN HEMT Reliability Using Optical Pumping as a Characterization Method

MRS Proceedings ◽

10.1557/opl.2012.1138 ◽

2012 ◽

Vol 1432 ◽

Author(s):

D. Cheney ◽

R. Deist ◽

B. Gila ◽

F. Ren ◽

P. Whiting ◽

...

Keyword(s):

Band Gap ◽

Optical Pumping ◽

Drain Current ◽

Stress Tests ◽

Optically Pumped ◽

Gan Hemt ◽

Load Line ◽

Gan Hemts ◽

Dc Stress

ABSTRACTBy pumping AlGaN/GaN HEMTs with below band-gap light we observe changes in drain current that correspond to the trapping and detrapping of carriers within the band-gap. These changes in drain current are indicators of trap density, since the energy from a specific wavelength of light pumps traps whose activation energies are less than or equal to that of the light source.AlGaN/GaN HEMTs on SiC with dual submicron gates with widths of 125nm, 140nm, or 170nm, are DC-stressed under three different conditions along a load line: VGS=0, VDS=5 (on-state), VGS=-2, VDS=9.2 and, VGS=-6, VDS=25 (off-state). The stress tests are interrupted at 20% degradation and the optically pumped comparisons to the baseline are measured.This paper describes the optical pumping technique and results from experiments of AlGaN/GaN HEMTs under the three DC stress biases along a load line.

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An analytical model for the current voltage characteristics of GaN-capped AlGaN/GaN and AlInN/GaN HEMTs including thermal and self-heating effects

International Journal of Electrical and Computer Engineering (IJECE) ◽

10.11591/ijece.v10i2.pp1791-1804 ◽

2020 ◽

Vol 10 (2) ◽

pp. 1791

Author(s):

A. Bellakhdar ◽

A. Telia ◽

J. L. Coutaz

Keyword(s):

Analytical Model ◽

Drain Current ◽

High Electron Mobility Transistors ◽

Published Data ◽

High Electron ◽

Self Heating ◽

Heating Effects ◽

Cap Layer ◽

Gan Hemts ◽

Sheet Density

We present an analytical model for the I-V characteristics of AlGaN/GaN and AlInN/GaN high electron mobility transistors (HEMT). Our study focuses on the influence of a GaN capping layer, and of thermal and self-heating effects. Spontaneous and piezoelectric polarizations at Al (Ga,In)N/GaN and GaN/Al(Ga,In)N interfaces have been incorporated in the analysis. Our model permits to fit several published data. Our results indicate that the GaN cap layer reduces the sheet density of the two-dimensional electron gas (2DEG), leading to a decrease of the drain current, and that n+-doped GaN cap layer provides a higher sheet density than undoped one. In n+GaN/AlInN/GaN HEMTs, the sheet carrier concentration is higher than in n+GaN/AlGaN/GaN HEMTs, due to the higher spontaneous polarization charge and conduction band discontinuity at the substrate/barrier layer interface.

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