Collimated aerosol beam deposition: sub 5-μm resolution of printed actives and passives

2008 ◽  
Author(s):  
D.L. Schulz ◽  
J.M. Hoey ◽  
D. Thompson ◽  
O.F. Swenson ◽  
S. Han ◽  
...  
Keyword(s):  
Beam Deposition

Electron energy loss spectroscopy of diamond-like carbon thin films

1992 ◽  
Vol 50 (2) ◽  
pp. 1272-1273
Author(s):  
J. Kulik ◽  
Y. Lifshitz ◽  
G.D. Lempert ◽  
S. Rotter ◽  
J.W. Rabalais ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Loss ◽  
Electron Energy ◽  
Ion Beam ◽  
Diamond Like Carbon ◽  
Ion Beam Deposition ◽  
Chemistry Research ◽  
Carbon Thin Films ◽  
Electron Energy Loss ◽  
Beam Deposition

Carbon thin films with diamond-like properties have generated significant interest in condensed matter science in recent years. Their extreme hardness combined with insulating electronic characteristics and high thermal conductivity make them attractive for a variety of uses including abrasion resistant coatings and applications in electronic devices. Understanding the growth and structure of such films is therefore of technological interest as well as a goal of basic physics and chemistry research. Recent investigations have demonstrated the usefulness of energetic ion beam deposition in the preparation of such films. We have begun an electron microscopy investigation into the microstructure and electron energy loss spectra of diamond like carbon thin films prepared by energetic ion beam deposition.The carbon films were deposited using the MEIRA ion beam facility at the Soreq Nuclear Research Center in Yavne, Israel. Mass selected C+ beams in the range 50 to 300 eV were directed onto Si {100} which had been etched with HF prior to deposition.

Carbon Film Deposition On Silicon Using Low Energy Ion Beams

1991 ◽  
Vol 223 ◽  
Author(s):  
Qin Fuguang ◽  
Yao Zhenyu ◽  
Ren Zhizhang ◽  
S.-T. Lee ◽  
I. Bello ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Carbon Film ◽  
Carbon Films ◽  
Film Deposition ◽  
Ion Energy ◽  
Transmission Electron ◽  
Higher Temperature ◽  
Post Implantation ◽  
Beam Deposition

ABSTRACTDirect ion beam deposition of carbon films on silicon in the ion energy range of 15–500eV and temperature range of 25–800°C has been studied using mass selected C+ ions under ultrahigh vacuum. The films were characterized with X-ray photoelectron spectroscopy, Raman spectroscopy, and transmission electron microscopy and diffraction analysis. Films deposited at room temperature consist mainly of amorphous carbon. Deposition at a higher temperature, or post-implantation annealing leads to formation of microcrystalline graphite. A deposition temperature above 800°C favors the formation of microcrystalline graphite with a preferred orientation in the (0001) direction. No evidence of diamond formation was observed in these films.

Electron beam deposition of ZrO2ZnO films

1996 ◽  
Vol 290-291 ◽  
pp. 80-83 ◽  
Author(s):  
S.B. Qadri ◽  
E.F. Skelton ◽  
P. Lubitz ◽  
N.V. Nguyen ◽  
H.R. Khan
Keyword(s):  
Electron Beam ◽  
Zno Films ◽  
Electron Beam Deposition ◽  
Beam Deposition

Molecular beam deposition of high quality silicon oxide dielectric films

1995 ◽  
Vol 148 (4) ◽  
pp. 336-344 ◽  
Author(s):  
Naresh Chand ◽  
J.E. Johnson ◽  
J.W. Osenbach ◽  
W.C. Liang ◽  
L.C. Feldman ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Silicon Oxide ◽  
Dielectric Films ◽  
High Quality ◽  
Molecular Beam Deposition ◽  
Beam Deposition

Ionic Conductivities of Doped CeO2 Thin Films as Related to Their Microstructure

1995 ◽  
Vol 411 ◽  
Author(s):  
Chunyan Tian ◽  
Siu-Wai Chan
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Ionic Conductivities ◽  
Dielectric Constants ◽  
Grain Structure ◽  
X Ray Diffraction ◽  
Fine Grain ◽  
Brick Layer Model ◽  
Columnar Grain ◽  
Beam Deposition

ABSTRACTThin films of 4% Y2O3 doped CeO2/Pd film/(001)LaA103 with a very low pinhole density were successfully prepared using electron-beam deposition technique. The microstructure of the films was characterized by x-ray diffraction and the electrical properties were studied as a function of temperature with AC impedance spectroscopy. A brick layer model was adopted to correlate the electrical properties to the microstructure of the films, which can be simplified as either a series or a parallel equivalent circuit associated with either a fine grain or a columnar grain structure, respectively. The conductivities of the films fell between the conductivities derived from the two circuit models, suggesting that the films are of a mixed fine grain and columnar grain structure. The measured dielectric constants of the films were found smaller than that of the bulk.

scholarly journals Electron-beam deposition of metals for mask repair

2003 ◽  
Vol 9 (S02) ◽  
pp. 984-985
Author(s):  
Young Choi ◽  
David C Joy
Keyword(s):  
Electron Beam ◽  
Electron Beam Deposition ◽  
Beam Deposition

Adjustable, (super)hydrophobicity by e-beam deposition of nanostructured PTFE on textured silicon surfaces

2015 ◽  
Vol 51 (3) ◽  
pp. 1316-1323 ◽  
Author(s):  
A. F. Michels ◽  
P. A. Soave ◽  
J. Nardi ◽  
P. L. G. Jardim ◽  
S. R. Teixeira ◽  
...  
Keyword(s):  
Silicon Surfaces ◽  
Beam Deposition

scholarly journals Optical characterization of photosensitive AMTIR-1 chalcogenide thin layers deposited by electron beam deposition

2016 ◽  
Vol 442 ◽  
pp. 22-28 ◽  
Author(s):  
Alexandre Joërg ◽  
Fabien Lemarchand ◽  
Mengxue Zhang ◽  
Michel Lequime ◽  
Julien Lumeau
Keyword(s):  
Electron Beam ◽  
Optical Characterization ◽  
Thin Layers ◽  
Electron Beam Deposition ◽  
Beam Deposition
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