scholarly journals Integrated grating coupler/power splitter for on-chip optical power distribution

2014 ◽  
Author(s):  
Thijs Spuesens ◽  
Shibnath Pathak ◽  
Michael Vanslembrouck ◽  
Pieter Dumon ◽  
Wim Bogaerts
Keyword(s):  
Power Distribution ◽  
Optical Power ◽  
Grating Coupler ◽  
Power Splitter ◽  
On Chip

scholarly journals Design of a Four-Branch Optical Power Splitter Based on Gallium-Nitride Using Rectangular Waveguide Coupling for Telecommunication Links

2019 ◽  
Vol 2019 ◽  
pp. 1-9
Author(s):  
Retno W. Purnamaningsih ◽  
Nji R. Poespawati ◽  
Elhadj Dogheche
Keyword(s):  
Gallium Nitride ◽  
Power Distribution ◽  
Optical Power ◽  
Power Input ◽  
Input Power ◽  
Propagation Length ◽  
Power Splitter ◽  
Excess Loss ◽  
Total Input ◽  
Rectangular Waveguides

This paper reports design of a simple four-branch optical power splitter using five parallel rectangular waveguides coupling in a gallium-nitride (GaN) semiconductor/sapphire for telecommunication links. The optimisation was conducted using the 3D FD-BPM method for long wavelength optical communication. The result shows that, at propagation length of 925 μm, the optical power input was successfully split into four uniform output beams, each with 24% of total input power. It is also shown that the relative output power distribution is almost stable through the C-band range. At the operating wavelength of 1.55 μm, the proposed power splitter has an excess loss lower than 0.2 dB. This study demonstrates the opportunity to develop optical interconnections from UV-Visible to near IR wavelengths.

scholarly journals Tailorable and Broadband On-Chip Optical Power Splitter

2019 ◽  
Vol 9 (20) ◽  
pp. 4239 ◽  
Author(s):  
Hyeongpin Kim ◽  
Heedeuk Shin
Keyword(s):  
Integrated Circuits ◽  
Insertion Loss ◽  
Optical Power ◽  
Power Splitting ◽  
Power Ratio ◽  
Power Splitter ◽  
Splitting Ratio ◽  
Low Insertion Loss ◽  
On Chip ◽  
Tapered Waveguides

An on-chip optical power splitter is a key component of photonic signal processing and quantum integrated circuits and requires compactness, wideband, low insertion loss, and variable splitting ratio. However, designing an on-chip splitter with both customizable splitting ratio and wavelength independence is a big challenge. Here, we propose a tailorable and broadband optical power splitter over 100 nm with low insertion loss less than 0.3%, as well as a compact footprint, based on 1×2 interleaved tapered waveguides. The proposed scheme can design the output power ratio of transverse electric modes, lithographically, and a selection equation of a power splitting ratio is extracted to obtain the desired power ratio. Our splitter scheme is close to an impeccable on-chip optical power splitter for classical and quantum integrated photonic circuits.

scholarly journals Grating Couplers With an Integrated Power Splitter for High-Intensity Optical Power Distribution

2016 ◽  
Vol 28 (11) ◽  
pp. 1173-1176 ◽  
Author(s):  
T. Spuesens ◽  
S. Pathak ◽  
M. Vanslembrouck ◽  
P. Dumon ◽  
W. Bogaerts
Keyword(s):  
Power Distribution ◽  
High Intensity ◽  
Optical Power ◽  
Grating Couplers ◽  
Power Splitter

Use of various keratometry data (ring and zone) in trifocal IOL calculation

2021 ◽  
pp. 53-56
Author(s):  
A.D. Loginova ◽  
◽  
S.V. Shukhaev ◽  
S.S. Kudlakhmedov ◽  
E.V. Boiko ◽  
...  
Keyword(s):  
Power Distribution ◽  
Optical Power ◽  
Iol Implantation ◽  
Universal Formula ◽  
Significant Difference ◽  
Trifocal Iol ◽  
Iol Calculation ◽  
Km Value ◽  
Tomographic Data ◽  
Corneal Refractive Power

Purpose. To compare the results of trifocal IOL calculation using various corneal tomographic data (ring and zone). Methods. This retrospective study involved 46 patients (46 eyes), underwent cataract surgery with trifocal IOL implantation (AcrySof IQ PanOptix). The calculation was performed using Tomey OA-2000 according to 2 formulas (Barrett II Universal, Olsen). Keratometry values included Km (the average of two main meridians of a cornea) provided by Pentacam HR Power Distribution Apex map, which describes total corneal refractive power (TCRP) with diameter of 3.0, 4.0 and 5.0 mm on a ring and zone. Mean (MAE) and median (MedAE) predicted postoperative refraction errors were assessed after surgery. Results. Mean Km value on 3 mm zone and ring was: 42.75±1,46 D and 42,91±1,43 D, respectively (p<0,0001). Mean Km on 4 mm zone and ring was: 42.6±1.5 D and 43.3 ± 1.5 D, respectively (p <0.005). Mean Km value on 5 mm zone and ring was: 43,09±1,5 D and 43,55±1,48 D, respectively (p<0,0001). Calculations using the Barrett II Universal formula revealed significant difference between MAE and MedAE of the predicted postoperative refraction on 5mm zone and ring (p=0.045). When using the Olsen formula in the calculations, significant difference was revealed using the Km data with a diameter of 3 mm and 5 mm (p=0.001 и p=0.009, respectively). The calculation on 3 mm ring was more accurate than for 3 mm zone. With a 5 mm diameter, the calculation is more accurate according to the zone data. Conclusion. Mean Km value on Power Distribution Apex map according to ring is significantly greater then according to zone. 1) The calculation of the trifocal IOL based on the TCRP zone data is reliably more accurate than the ring data according to both formulas (Barrett II Universal and Olsen) with a diameter of 5 mm. 2) According to the Olsen formula with a diameter of 3 mm, the calculation of the optical power of trifocal IOL based on TCRP ring data is more accurate. Key words: IOL calculation, Trifocal IOL, corneal topography

High Temperature High Current Gain IC Compatible 4H-SiC Phototransistor

2019 ◽  
Vol 963 ◽  
pp. 832-836 ◽  
Author(s):  
Shuo Ben Hou ◽  
Per Erik Hellström ◽  
Carl Mikael Zetterling ◽  
Mikael Östling
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Room Temperature ◽  
Uv Light ◽  
Optical Power ◽  
Current Gain ◽  
High Current ◽  
Promising Candidate ◽  
Forward Current ◽  
On Chip

This paper presents our in-house fabricated 4H-SiC n-p-n phototransistors. The wafer mapping of the phototransistor on two wafers shows a mean maximum forward current gain (βFmax) of 100 at 25 °C. The phototransistor with the highest βFmax of 113 has been characterized from room temperature to 500 °C. βFmax drops to 51 at 400 °C and remains the same at 500 °C. The photocurrent gain of the phototransistor is 3.9 at 25 °C and increases to 14 at 500 °C under the 365 nm UV light with the optical power of 0.31 mW. The processing of the phototransistor is same to our 4H-SiC-based bipolar integrated circuits, so it is a promising candidate for 4H-SiC opto-electronics on-chip integration.

Influence of depth of intermediate layer on optical power distribution in W-type optical fibers

2012 ◽  
Vol 51 (20) ◽  
pp. 4896 ◽  
Author(s):  
Ana Simović ◽  
Alexandar Djordjevich ◽  
Svetislav Savović
Keyword(s):  
Optical Fibers ◽  
Power Distribution ◽  
Intermediate Layer ◽  
Optical Power
Sign in / Sign up

Export Citation Format

Share Document