Analytical modeling of threshold voltage of a double gate junction less field effect transistor

2013 2nd International Conference on Advances in Electrical Engineering (ICAEE) ◽

10.1109/icaee.2013.6750315 ◽

2013 ◽

Author(s):

Ayed Al Sayem ◽

Yeasir Arafat ◽

Md. Mushfiqur Rahman

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Analytical Modeling ◽

Field Effect Transistor ◽

Double Gate ◽

Effect Transistor

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Analytical Modeling of Surface Potential and Threshold Voltage for Junctionless Double Gate Vertical Slit Field Effect Transistor

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2017.2176 ◽

2017 ◽

Vol 12 (9) ◽

pp. 1001-1007

Author(s):

Tarun Chaudhary ◽

Gargi Khanna

Keyword(s):

Surface Potential ◽

Threshold Voltage ◽

Field Effect ◽

Analytical Modeling ◽

Field Effect Transistor ◽

Double Gate ◽

Vertical Slit ◽

Effect Transistor

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Threshold voltage modeling under size quantization for ultra-thin silicon double-gate metal-oxide-semiconductor field-effect transistor

Journal of Applied Physics ◽

10.1063/1.4737779 ◽

2012 ◽

Vol 112 (2) ◽

pp. 024513 ◽

Author(s):

Aditya Sankar Medury ◽

K. N. Bhat ◽

Navakanta Bhat

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Size Quantization ◽

Effect Transistor ◽

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Threshold voltage modeling and performance comparison of a novel linearly graded binary metal alloy gate junctionless double gate metal oxide semiconductor field effect transistor

Indian Journal of Physics ◽

10.1007/s12648-014-0584-5 ◽

2014 ◽

Vol 89 (6) ◽

pp. 593-598

Author(s):

S. Sarkhel ◽

B. Manna ◽

S. K. Sarkar

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Performance Comparison ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor ◽

And Performance

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A Pseudo Two-Dimensional Threshold Voltage Model for Low-Power Semiconductor Device PNIN Double-Gate-Tunneling Field Effect Transistor

Journal of Computational and Theoretical Nanoscience ◽

10.1166/jctn.2016.5438 ◽

2016 ◽

Vol 13 (8) ◽

pp. 5454-5457

Author(s):

Hao Zhao-Ming ◽

Li Yu-Chen

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Semiconductor Device ◽

Double Gate ◽

Two Dimensional ◽

Power Semiconductor Device ◽

Power Semiconductor ◽

Effect Transistor ◽

Threshold Voltage Model

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Impact of Strain on Drain Current and Threshold Voltage of Nanoscale Double Gate Tunnel Field Effect Transistor: Theoretical Investigation and Analysis

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.064503 ◽

2009 ◽

Vol 48 (6) ◽

pp. 064503 ◽

Author(s):

Sneh Saurabh ◽

M. Jagadesh Kumar

Keyword(s):

Theoretical Investigation ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Drain Current ◽

Double Gate ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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Analytical modeling and simulation of dual material double gate all around tunnel field effect transistor using MATLAB

2017 International Conference on Innovations in Information, Embedded and Communication Systems (ICIIECS) ◽

10.1109/iciiecs.2017.8276039 ◽

2017 ◽

Author(s):

R Helen Ramya Bharathi ◽

P. Karthikeyan

Keyword(s):

Modeling And Simulation ◽

Field Effect ◽

Analytical Modeling ◽

Field Effect Transistor ◽

Double Gate ◽

Effect Transistor ◽

Tunnel Field Effect Transistor ◽

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Potential-based threshold voltage and subthreshold swing models for junctionless double-gate metal-oxide-semiconductor field-effect transistor with dual-material gate

International Journal of Numerical Modelling Electronic Networks Devices and Fields ◽

10.1002/jnm.2067 ◽

2015 ◽

Vol 29 (2) ◽

pp. 230-242 ◽

Author(s):

Ping Wang ◽

Yiqi Zhuang ◽

Cong Li ◽

Yuqi Liu ◽

Zhi Jiang

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Subthreshold Swing ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor ◽

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Empirical Quantitative Modeling of Threshold Voltage of Sub-50-nm Double-Gate Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.3074 ◽

2006 ◽

Vol 45 (4B) ◽

pp. 3074-3078 ◽

Author(s):

Yuki Tahara ◽

Yasuhisa Omura

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Quantitative Modeling ◽

Double Gate ◽

Effect Transistor

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Analytical Threshold Voltage Model for Double-Gate Schottky Source/Drain Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.8311 ◽

2008 ◽

Vol 47 (11) ◽

pp. 8311-8316 ◽

Author(s):

Ryo Tanabe ◽

Kunihiro Suzuki

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor ◽

Threshold Voltage Model

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Junctionless Tunnel Field Effect Transistor with Nonuniform Doping

International Journal of Nanoscience ◽

10.1142/s0219581x14500252 ◽

2015 ◽

Vol 14 (03) ◽

pp. 1450025 ◽

Author(s):

Yogesh Goswami ◽

Pranav Asthana ◽

Shibir Basak ◽

Bahniman Ghosh

Keyword(s):

Gallium Arsenide ◽

Indium Arsenide ◽

Threshold Voltage ◽

Indium Antimonide ◽

Field Effect ◽

Field Effect Transistor ◽

Double Gate ◽

Short Channel ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

In this paper, the dc performance of a double gate Junctionless Tunnel Field Effect Transistor (DG-JLTFET) has been further enhanced with the implementation of double sided nonuniform Gaussian doping in the channel. The device has been simulated for different channel materials such as Si and various III-V compounds like Gallium Arsenide, Aluminium Indium Arsenide and Aluminium Indium Antimonide. It is shown that Gaussian doped channel Junctionless Tunnel Field Effect Transistor purveys higher ION/IOFF ratio, lower threshold voltage and sub-threshold slope and also offers better short channel performance as compared to JLTFET with uniformly doped channel.

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