S-parameters optimization in both segmented and unsegmented insulated TSV

2016 ◽  
Author(s):  
Juma Mary Atieno ◽  
Xuliang Zhang ◽  
He Song Bai
Keyword(s):  
Parameters Optimization ◽  
S Parameters

Marginal RF Gain Investigation and Root Cause Determination

2013 ◽  
Author(s):  
Keith Harber ◽  
Steve Brockett
Keyword(s):  
Radio Frequency ◽  
Failure Analysis ◽  
Power Amplifier ◽  
Physical Analysis ◽  
Root Cause ◽  
S Parameter ◽  
Mode Of Operation ◽  
S Parameters

Abstract This paper outlines the failure analysis of a Radio Frequency only (RF-only) failure on a complex Multimode Multiband Power Amplifier (MMPA) module, where slightly lower gain was observed in one mode of operation. 2 port S-parameter information was collected and utilized to help localize the circuitry causing the issue. A slight DC electrical difference was observed, and simulation was utilized to confirm that difference was causing the observed S-parameters. Physical analysis uncovered a very visible cause for the RF-only failure.

Development of Backside Scanning Capacitance Microscopy Technique for Advanced SOI Microprocessors

2006 ◽  
Author(s):  
Vinod Narang ◽  
P. Muthu ◽  
J.M. Chin ◽  
Vanissa Lim
Keyword(s):  
Plasma Etching ◽  
Data Interpretation ◽  
Parameters Optimization ◽  
Scanning Capacitance Microscopy ◽  
Microscopy Technique ◽  
Thermal Oxide ◽  
Specific Analysis ◽  
Thin Oxide ◽  
P Type ◽  
Uv Ozone

Abstract Implant related issues are hard to detect with conventional techniques for advanced devices manufactured with deep sub-micron technology. This has led to introduction of site-specific analysis techniques. This paper presents the scanning capacitance microscopy (SCM) technique developed from backside of SOI devices for packaged products. The challenge from backside method includes sample preparation methodology to obtain a thin oxide layer of high quality, SCM parameters optimization and data interpretation. Optimization of plasma etching of buried oxide followed by a new method of growing thin oxide using UV/ozone is also presented. This oxidation method overcomes the limitations imposed due to packaged unit not being able to heat to high temperature for growing thermal oxide. Backside SCM successfully profiled both the n and p type dopants in both cache and core transistors.

Research on High-Speed Cutting of Cr12MoV Hardened Steel - A Review

2020 ◽  
Vol 15 ◽  
Author(s):  
Fei Sun ◽  
Guohe Li ◽  
Qi Zhang ◽  
Meng Liu
Keyword(s):  
High Speed ◽  
Cutting Temperature ◽  
High Hardness ◽  
High Strength ◽  
Hardened Steel ◽  
Parameters Optimization ◽  
Future Research ◽  
High Speed Machining ◽  
Machined Surface ◽  
Stamping Die

: Cr12MoV hardened steel is widely used in the manufacturing of stamping die because of its high strength, high hardness, and good wear resistance. As a kind of mainstream cutting technology, high-speed machining has been applied in the machining of Cr12MoV hardened steel. Based on the review of a large number of literature, the development of high-speed machining of Cr12MoV hardened steel was summarized, including the research status of the saw-tooth chip, cutting force, cutting temperature, tool wear, machined surface quality, and parameters optimization. The problems that exist in the current research were discussed and the directions of future research were pointed out. It can promote the development of high-speed machining of Cr12MoV hardened steel.

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