The effects of doping, gate length, and gate dielectric on inverse subthreshold slope and on/off current ratio of a top gate silicon nanowire transistor

2008 ◽  
Author(s):  
Sishir Bhowmick ◽  
Khairul Alam ◽  
Quazi Deen Mohd Khosru
Keyword(s):  
Gate Dielectric ◽  
Silicon Nanowire ◽  
Gate Length ◽  
Subthreshold Slope ◽  
Current Ratio ◽  
Nanowire Transistor

scholarly journals Sub-Threshold Slope and ON/OFF Current variation in Nano-Scale MOSFETs

2019 ◽  
Author(s):  
Raja N Mir
Keyword(s):  
Three Dimensional ◽  
Device Performance ◽  
Gate Length ◽  
Subthreshold Slope ◽  
Current Ratio ◽  
Nano Scale ◽  
Current Variation ◽  
Mos Device ◽  
Three Dimensional Simulations

The Multi Gate transistors (MGT) have been used to improve the transistor device performance at the nanometer scales. MGTs alleviate many problems in the planar devices due to tighter control of the gate on the channel. In this paper the change in the Fin Architecture and Gate Length of the MOS device, is correlated with the Subthreshold Slope (SS) and ON/OFF current ratio. The study is done by conducting experiments and three-dimensional simulations.

scholarly journals Design and Simulation of Silicon Nanowire Tunnel Field Effect Transistor

2021 ◽  
Author(s):  
Parveen Kumar ◽  
Balwinder Raj
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Oxide Thickness ◽  
Doping Profile ◽  
Subthreshold Slope ◽  
Current Ratio ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
Nanowire Structure

This paper analyses the different parameters of tunnel field-effect transistor (TFET) based on silicon Nanowire in vertical nature by using a Gaussian doping profile. The device has been designed using an n-channel P+-I-N+ structure for tunneling junction of TFET with gate-all-around (GAA) Nanowire structure. The gate length has been taken as 100 nm using silicon Nanowire to obtain the various parameters such as ON-current (ION), OFF-current (IOFF), current ratio, and Subthreshold slope (SS) by applying different values of work function at the gate, the radius of Nanowire and oxide thickness of the device. The simulations are performed on Silvaco TCAD which gives a better parametric analysis over conventional tunnel field-effect transistor.

scholarly journals Characterization of high mobility inverted coplanar Zinc Nitride Thin-film Transistors

2018 ◽  
Vol 65 (1) ◽  
pp. 10 ◽  
Author(s):  
Miguel Angel Dominguez Jimenez ◽  
Jose Pau ◽  
Ovier Obregon ◽  
Anayantzi Luna ◽  
Andres Redondo
Keyword(s):  
Room Temperature ◽  
Gate Dielectric ◽  
High Mobility ◽  
Subthreshold Slope ◽  
Current Ratio ◽  
Mos Capacitors ◽  
Dielectric Characteristics ◽  
Zinc Nitride ◽  
Capacitance Voltage

In this work, high mobility TFTs based on zinc nitride (Zn3N2) sputtered at room temperature using spin-on glass (SOG) as gate dielectric are presented. The inverted coplanar structure is used for the Zn3N2 TFTs. The devices exhibit an on/off-current ratio of 106 and a subthreshold slope of 0.88 V/decade. The extracted field-effect mobility was 15.8 cm2/Vs which is among the highest reported for Zn3N2 TFTs. In addition, n-type MOS capacitors were fabricated and characterized by capacitance – voltage and capacitance – frequency measurements to evaluate the dielectric characteristics of the SOG film.      

scholarly journals Biologically sensitive field-effect transistors: from ISFETs to NanoFETs

2016 ◽  
Vol 60 (1) ◽  
pp. 81-90 ◽  
Author(s):  
Vivek Pachauri ◽  
Sven Ingebrandt
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Label Free ◽  
Biomolecular Detection ◽  
New Device ◽  
Label Free Detection ◽  
History Of

Biologically sensitive field-effect transistors (BioFETs) are one of the most abundant classes of electronic sensors for biomolecular detection. Most of the time these sensors are realized as classical ion-sensitive field-effect transistors (ISFETs) having non-metallized gate dielectrics facing an electrolyte solution. In ISFETs, a semiconductor material is used as the active transducer element covered by a gate dielectric layer which is electronically sensitive to the (bio-)chemical changes that occur on its surface. This review will provide a brief overview of the history of ISFET biosensors with general operation concepts and sensing mechanisms. We also discuss silicon nanowire-based ISFETs (SiNW FETs) as the modern nanoscale version of classical ISFETs, as well as strategies to functionalize them with biologically sensitive layers. We include in our discussion other ISFET types based on nanomaterials such as carbon nanotubes, metal oxides and so on. The latest examples of highly sensitive label-free detection of deoxyribonucleic acid (DNA) molecules using SiNW FETs and single-cell recordings for drug screening and other applications of ISFETs will be highlighted. Finally, we suggest new device platforms and newly developed, miniaturized read-out tools with multichannel potentiometric and impedimetric measurement capabilities for future biomedical applications.

scholarly journals Amorphous Hafnium-Indium-Zinc Oxide Semiconductor Thin Film Transistors

2012 ◽  
Vol 2012 ◽  
pp. 1-4 ◽  
Author(s):  
Sheng-Po Chang ◽  
San-Syong Shih
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Oxide Semiconductor ◽  
Subthreshold Slope ◽  
Field Effect Mobility ◽  
Excellent Performance ◽  
Current Ratio ◽  
Indium Zinc Oxide ◽  
Sputtering Power

We reported on the performance and electrical properties of co-sputtering-processed amorphous hafnium-indium-zinc oxide (α-HfIZO) thin film transistors (TFTs). Co-sputtering-processedα-HfIZO thin films have shown an amorphous phase in nature. We could modulate the In, Hf, and Zn components by changing the co-sputtering power. Additionally, the chemical composition ofα-HfIZO had a significant effect on reliability, hysteresis, field-effect mobility (μFE), carrier concentration, and subthreshold swing (S) of the device. Our results indicated that we could successfully and easily fabricateα-HfIZO TFTs with excellent performance by the co-sputtering process. Co-sputtering-processedα-HfIZO TFTs were fabricated with an on/off current ratio of~106, higher mobility, and a subthreshold slope as steep as 0.55 V/dec.

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