Investigation of Sensor Performance in Accumulation- and Inversion-Mode Silicon Nanowire pH Sensors

2014 ◽  
Vol 61 (5) ◽  
pp. 1607-1610 ◽  
Author(s):  
Jieun Lee ◽  
Bongsik Choi ◽  
Seonwook Hwang ◽  
Jung Han Lee ◽  
Byung-Gook Park ◽  
...  
2011 ◽  
Vol 1303 ◽  
Author(s):  
Sun Choi ◽  
Albert P. Pisano

ABSTRACTWe report simple and effective methods to develop long-term, stable silicon nanowire-based pH sensors and systematic studies of the performance of the developed sensors. In this work, we fabricate silicon nanowire pH sensors based on top-down fabrication processes such as E-beam lithography and conventional photolithography. In order to improve the stability of the sensor performance, the sensors are coated with a passivation layer (silicon nitride) for effective electrical insulation and ion-blocking. The stability, the pH sensitivity, and the repeatability of the sensor response are critically analyzed with regard to the physics of sensing interface between sample liquid and the sensing surface. The studies verify that the sensor with a passivation layer over critical thickness show long-term, stable sensor response without long-term drift. The studies also show the detection of pH level with silicon nanowire sensors is repeatable only after proper rinsing of sensor surfaces and there exists trade-off between the stability and the pH sensitivity of sensor response.


2019 ◽  
Vol 279 ◽  
pp. 111-121 ◽  
Author(s):  
Kun Zhou ◽  
Zhida Zhao ◽  
Liyang Pan ◽  
Zheyao Wang

2013 ◽  
Vol 684 ◽  
pp. 295-298
Author(s):  
Seung Min Lee ◽  
Hyun Jun Jang ◽  
Jong Tae Park

A comparative study on off-state breakdown characteristics in nanowire JL and IM multiple gate MOSFETs has been performed for different gate bias voltages and fin widths. In order to understand the drain breakdown mechanism with different transistor structures, the device was simulated using the 3-dimensional ATLAS software. The band-to-band tunneling current and the gate-induced-drain-leakage current trigger the off-state breakdown in JL transistor and IM transistor, respectively. From experiment and simulation, the off-state breakdown voltage is lower in JL transistor than in IM transistor. As the gate is biased more negatively, the off-state breakdown voltages are increased in JL and IM transistors.


Author(s):  
Chan-Hoon Park ◽  
Myung-Dong Ko ◽  
Ki-Hyun Kim ◽  
Jae-Ho Hong ◽  
Rock-Hyun Baek ◽  
...  

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