Circular Polarization and Wideband Filtering Function Switching Device based on Metasurface

AbstractA broadband circularly polarized slotted square patch antenna with horizontal meandered strip (HMS) is presented and studied. The HMS feeding technique provides the good impedance matching and broadside symmetrical radiation patterns. A set of cross asymmetrical slots are etched on the radiating patch to realize the circular polarization. An electrically small stub is added on the edge of the antenna for further improvement in performance. Measured 10-dB impedance bandwidth (IBW) and 3-dB axial ratio bandwidth (ARBW) of the proposed antenna are 32.31 % (3.14–4.35 GHz) and 20.91 % (3.34–4.12 GHz), respectively. The gain of the antenna is varied from 3.5 to 4.86dBi within 3-dB ARBW. Measured results matched well with the simulated results.

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Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device

Nanotechnology ◽

10.1088/1361-6528/ab0484 ◽

2019 ◽

Vol 30 (21) ◽

pp. 215201 ◽

Cited By ~ 3

Author(s):

Xuanqi Huang ◽

Runchen Fang ◽

Chen Yang ◽

Kai Fu ◽

Houqiang Fu ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Steep Slope ◽

Switching Device ◽

Gan Hemt ◽

Threshold Switching

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Simple design of efficient broadband multifunctional polarization converter for X-band applications

Scientific Reports ◽

10.1038/s41598-021-81586-w ◽

2021 ◽

Vol 11 (1) ◽

Author(s):

Thi Kim Thu Nguyen ◽

Thi Minh Nguyen ◽

Hong Quang Nguyen ◽

Thanh Nghia Cao ◽

Dac Tuyen Le ◽

...

Keyword(s):

Circular Polarization ◽

Incident Angle ◽

Polarization Conversion ◽

Simple Design ◽

Cross Polarization ◽

Polarization Converter ◽

Frequency Bands ◽

X Band ◽

Cost Efficient ◽

Patch Resonators

AbstractA simple design of a broadband multifunctional polarization converter using an anisotropic metasurface for X-band application is proposed. The proposed polarization converter consists of a periodic array of the two-corner-cut square patch resonators based on the FR-4 substrate that achieves both cross-polarization and linear-to-circular polarization conversions. The simulated results show that the polarization converter displays the linear cross-polarization conversion in the frequency range from 8 to 12 GHz with the polarization conversion efficiency above 90%. The efficiency is kept higher than 80% with wide incident angle up to 45°. Moreover, the proposed design achieves the linear-to-circular polarization conversion at two frequency bands of 7.42–7.6 GHz and 13–13.56 GHz. A prototype of the proposed polarization converter is fabricated and measured, showing a good agreement between the measured and simulated results. The proposed polarization converter exhibits excellent performances such as simple structure, multifunctional property, and large cost-efficient bandwidth and wide incident angle insensitivity in the linear cross polarization conversion, which can be useful for X-band applications. Furthermore, this structure can be extended to design broadband polarization converters in other frequency bands.

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Resistance state evolution under constant electric stress on a MoS2 non-volatile resistive switching device

RSC Advances ◽

10.1039/d0ra05209d ◽

2020 ◽

Vol 10 (69) ◽

pp. 42249-42255

Author(s):

Xiaohan Wu ◽

Ruijing Ge ◽

Yifu Huang ◽

Deji Akinwande ◽

Jack C. Lee

Keyword(s):

Resistive Switching ◽

Constant Voltage ◽

Switching Device ◽

Current Stress ◽

Electric Stress ◽

State Evolution ◽

Conductive Bridge ◽

Resistance State ◽

Switching Devices

Constant voltage and current stress were applied on MoS2 resistive switching devices, showing unique behaviors explained by a modified conductive-bridge-like model.

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Multi-level characteristics of TiOx transparent non-volatile resistive switching device by embedding SiO2 nanoparticles

Scientific Reports ◽

10.1038/s41598-021-89315-z ◽

2021 ◽

Vol 11 (1) ◽

Author(s):

Sera Kwon ◽

Min-Jung Kim ◽

Kwun-Bum Chung

Keyword(s):

Resistive Switching ◽

High Performance ◽

Sio2 Nanoparticles ◽

Visible Range ◽

Resistive State ◽

Switching Device ◽

Structural Density ◽

Multi Level ◽

Switching Characteristics ◽

Switching Devices

AbstractTiOx-based resistive switching devices have recently attracted attention as a promising candidate for next-generation non-volatile memory devices. A number of studies have attempted to increase the structural density of resistive switching devices. The fabrication of a multi-level switching device is a feasible method for increasing the density of the memory cell. Herein, we attempt to obtain a non-volatile multi-level switching memory device that is highly transparent by embedding SiO2 nanoparticles (NPs) into the TiOx matrix (TiOx@SiO2 NPs). The fully transparent resistive switching device is fabricated with an ITO/TiOx@SiO2 NPs/ITO structure on glass substrate, and it shows transmittance over 95% in the visible range. The TiOx@SiO2 NPs device shows outstanding switching characteristics, such as a high on/off ratio, long retention time, good endurance, and distinguishable multi-level switching. To understand multi-level switching characteristics by adjusting the set voltages, we analyze the switching mechanism in each resistive state. This method represents a promising approach for high-performance non-volatile multi-level memory applications.

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