Numerical analysis of temperature and humidity effects on the reliability of high power light emitting diode

2011 ◽  
Author(s):  
Huang Jing ◽  
Pan Kai-lin ◽  
Li Peng ◽  
Wang Shuang-ping
Keyword(s):  
Numerical Analysis ◽  
High Power ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Humidity Effects ◽  
Temperature And Humidity

Temperature and Humidity Dependent Reliability Analysis of RGB LED Chips

2006 ◽  
Author(s):  
Jun-Xian Fu ◽  
Shukri Souri ◽  
James S. Harris
Keyword(s):  
Reliability Analysis ◽  
Printed Circuit Board ◽  
Light Emitting Diode ◽  
Circuit Board ◽  
Light Emitting ◽  
Printed Circuit ◽  
Root Cause ◽  
Micro Cracks ◽  
Temperature And Humidity

Abstract Temperature and humidity dependent reliability analysis was performed based on a case study involving an indicator printed-circuit board with surface-mounted multiple-die red, green and blue light-emitting diode chips. Reported intermittent failures were investigated and the root cause was attributed to a non-optimized reflow process that resulted in micro-cracks and delaminations within the molding resin of the chips.

Phosphor concentration and geometry for high power white light emitting diode

2010 ◽  
Author(s):  
Kyung-Mi Moon ◽  
Se-Hwan An ◽  
Hyung-Kun Kim ◽  
Jung-Hye Chae ◽  
Yong-Jo Park
Keyword(s):  
White Light ◽  
High Power ◽  
Light Emitting Diode ◽  
Light Emitting

High-Power CW Operation of GaInAsP/InP Superluminescent Light-Emitting Diode with Tapered Active Region

2001 ◽  
Vol 40 (Part 2, No. 7A) ◽  
pp. L678-L680 ◽  
Author(s):  
Takeshi Yamatoya ◽  
Shigeaki Sekiguchi ◽  
Fumio Koyama ◽  
Kenichi Iga
Keyword(s):  
Active Region ◽  
High Power ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Cw Operation

Reliability of High-Power Light Emitting Diode Attached With Different Thermal Interface Materials

2010 ◽  
Vol 132 (3) ◽  
Author(s):  
Xin Li ◽  
Xu Chen ◽  
Guo-Quan Lu
Keyword(s):  
High Power ◽  
Heat Dissipation ◽  
Light Emitting Diode ◽  
Temperature Cycling ◽  
Fluorescent Light ◽  
Light Sources ◽  
Light Emitting ◽  
Die Attach ◽  
Nanosilver Paste ◽  
Interconnection Material

As a solid electroluminescent source, white light emitting diode (LED) has entered a practical stage and become an alternative to replace incandescent and fluorescent light sources. However, due to the increasing integration and miniaturization of LED chips, heat flux inside the chip is also increasing, which puts the packaging into the position to meet higher requirements of heat dissipation. In this study, a new interconnection material—nanosilver paste is used for the LED chip packaging to pursue a better optical performance, since high thermal conductivity of this material can help improve the efficiency of heat dissipation for the LED chip. The bonding ability of this new die-attach material is evaluated by their bonding strength. Moreover, high-power LED modules connected with nanosilver paste, Sn3Ag0.5Cu solder, and silver epoxy are aged under hygrothermal aging and temperature cycling tests. The performances of these LED modules are tested at different aging time. The results show that LED modules sintered with nanosilver paste have the best performance and stability.

Phosphor–silicone interaction effects in high power white light emitting diode packages

2017 ◽  
Vol 28 (23) ◽  
pp. 17557-17569 ◽  
Author(s):  
Jiajie Fan ◽  
Mengni Zhang ◽  
Xiao Luo ◽  
Cheng Qian ◽  
Xuejun Fan ◽  
...  
Keyword(s):  
White Light ◽  
High Power ◽  
Light Emitting Diode ◽  
Interaction Effects ◽  
Light Emitting

scholarly journals Thermal performance of heat sink with fluid pockets for high power light emitting diode

2017 ◽  
Vol 14 (4) ◽  
pp. 4846-4862
Author(s):  
Sangmesh ◽  
◽  
Gopalakrishna Keshava Narayana ◽  
Manjunath Shiraganhalli Honnaiah ◽  
Krishna Venkatesh ◽  
...  
Keyword(s):  
Thermal Performance ◽  
High Power ◽  
Heat Sink ◽  
Light Emitting Diode ◽  
Light Emitting

Thermal Analysis of High Power Light Emitting Diodes Package

2011 ◽  
Vol 687 ◽  
pp. 215-221
Author(s):  
Yuan Yuan Han ◽  
Hong Guo ◽  
Xi Min Zhang ◽  
Fa Zhang Yin ◽  
Ke Chu ◽  
...  
Keyword(s):  
Finite Element Method ◽  
High Power ◽  
Thermal Field ◽  
Heat Dissipation ◽  
Light Emitting Diode ◽  
Convective Heat Exchange ◽  
Input Power ◽  
Junction Temperature ◽  
Original Structure ◽  
Light Emitting

With increasing of the input power of the chips in light emitting diode (LED)， the thermal accumulation of LEDs package increases. Therefore solving the heat issue has become a precondition of high power LED application. In this paper, finite element method was used to analyze the thermal field of high power LEDs. The effect of the heatsink structure on the junction temperature was also investigated. The results show that the temperature of the chip is 95.8°C which is the highest, and it meets the requirement. The conductivity of each component affects the thermal resistance. Convective heat exchange is connected with the heat dissipation area. In the original structure of LEDs package the heat convected through the substrate is the highest, accounting for 92.58%. Three heatsinks with fin structure are designed to decrease the junction temperature of the LEDs package.

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