Cryogenic temperature dependence and modelling of RF-noise parameters of carbon doped InP/InGaAs HBT

Author(s):  
M. Agethen ◽  
S. Schuller ◽  
P. Velling ◽  
W. Brockerhoff ◽  
F.-J. Tegude
1996 ◽  
Vol 421 ◽  
Author(s):  
Wim Geerts ◽  
J.D. MacKenzie ◽  
C.R. Abernathy ◽  
S.J Pearton ◽  
Thomas Schmiedel

AbstractThe temperature dependence of the Hall voltage and resistivity of highly carbon doped GaN were measured. From the sign of the Hall voltage, the material appears to be p-type. Charge transport takes place in an impurity band and the valence band. The effective activation energy as estimated from the maximum in the temperature versus Hall voltage relation is 10–30 meV.


Author(s):  
Koichiro Okamoto ◽  
Takahisa Tanaka ◽  
Makoto Miyamura ◽  
Hiroki Ishikuro ◽  
Ken Uchida ◽  
...  

Abstract A nonvolatile resistive switching of NanoBridgeTM (NB) at 4 K has been demonstrated for realizing the quantum-classical interface (QCI), in which the challenging of reset operation at cryogenic temperature is successfully achieved. The set voltage of the NB is increased with decreasing temperature, saturated around 150 K and to be 2.55 V at 4 K. The on-state resistances tuned at 1k-5kΩ show small temperature dependence down to 4 K due to high residual resistivity. The increased reset current of the NB at 4 K is compensated by the process optimization with thermal engineering and the increased Idsat of the select transistor at 4 K, resulting in the stable switching. The low-power QCI featuring NBs is a strong candidate for controlling a large number of qubits at cryogenic temperature.


Author(s):  
Tomoko Mizutani ◽  
Kiyoshi Takeuchi ◽  
Takuya Saraya ◽  
Hiroshi Oka ◽  
Takahiro MORI ◽  
...  

Abstract Threshold voltage variability of bulk MOSFETs was measured at room temperature and cryogenic temperature and compared. It is found that the temperature dependences of threshold voltage defined by extrapolation (VTHEX) and threshold voltage defined by constant current (VTHC) show different behaviors and the percolation path in the channel, which is caused by potential valley due to random dopant fluctuations, weakens the temperature dependence of VTHC.


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