Effect of Nonuniformities of Microstructure and Electrical Property of Grain Boundary to the Global Electrical Characteristics

2006 ◽  
Author(s):  
Youping Tu ◽  
Lijian Ding ◽  
Jinliang He ◽  
Jun Hu ◽  
Rong Zeng
Keyword(s):  
Electrical Property ◽  
Grain Boundary ◽  
Electrical Characteristics

The Effects of Cu Dopant on the Microstructure and Non-Ohmic Electrical Properties of ZnO Varistors

2011 ◽  
Vol 343-344 ◽  
pp. 160-165 ◽  
Author(s):  
Ji Wei Fan ◽  
Xiao Peng Li ◽  
Zhen Guo Zhang ◽  
Zhi Qiang Jiao ◽  
Xiang Yang Liu ◽  
...  
Keyword(s):  
Electrical Property ◽  
Electrical Properties ◽  
Grain Boundary ◽  
Grain Growth ◽  
Electrical Characteristics ◽  
Doping Effects ◽  
Zno Varistors ◽  
Doped Zno ◽  
Cu Dopant ◽  
Good Agreement

The doping effects of Cu on the microstructure and non-ohmic electrical properties of ZnO varistors were studied. Addition of Cu2O can enhance the ZnO grain growth during sintering. The SEM and EDS results revealed that the added Cu mainly distributed in the grain boundary and spinel phases of ZnO varistors. The Cu2O addition increased the both of grain and grain boundary resistances. However it decreased the non-ohmic electrical characteristics of ZnO varistors, which is a good agreement with similar findings on Ag2O additions, but contrasts to the reports of good non-ohmic electrical property which found on binary Cu doped ZnO varistors.

Soi Formation by a Line-Source Electron Beam and Electrical Characteristics

1987 ◽  
Vol 107 ◽  
Author(s):  
H. Hada ◽  
H. Okabayashi ◽  
S. Saito ◽  
T. Nakamura ◽  
Y. Kawase
Keyword(s):  
Electron Beam ◽  
Grain Boundary ◽  
Line Source ◽  
Field Effect ◽  
Electrical Characteristics ◽  
Field Effect Mobility ◽  
Boundary Density ◽  
Width Direction ◽  
Good Uniformity

AbstractCrystal quality of SOI and electrical characteristics of p-MOSFETs fabricated in SOI films have been studied. The SOI recrystallization is done by a cw-operated, high-power, line-source and line-shaped electron beam annealing. Single crystal SOI strips, 15~20¼mxa few mm in sized, are formed with a good uniformity on a 4 inch diameter wafer by adopting the step and repeat system in the annealing apparatus. p-MOSFETs with ~90% field effect mobility of the bulk values are fabricated in the SOI films. The electrical characteristics of p-MOSFETs, fabricated in the SOI regions beyond the lateral seeding distance (~15¼m), are found to be independent of the low angle grain boundary density in the MOSFET channel, when the low angle grain boundaries extended toward the channel width direction.

Analysis of Grain-Boundary in SrCoO3–Doped ZnO Varistors and its Electrical Characteristics

2013 ◽  
Vol 582 ◽  
pp. 181-184 ◽  
Author(s):  
Eiichi Koga ◽  
Masayuki Hogiri ◽  
Yoshiko Higashi
Keyword(s):  
Grain Boundary ◽  
Schottky Barrier ◽  
Boundary Region ◽  
Electrical Characteristics ◽  
Electrical Behavior ◽  
Hetero Structure ◽  
Characteristic Behavior ◽  
Zno Varistors ◽  
Doped Zno ◽  
Barrier Model

The grain-boundary and its electrical characteristics in SrCoO3doped ZnO varistors were studied. The grain-boundary around ZnO-grain is probably composed of SrCoO3, and its electrical behavior is clearly different from two conventional types of Bi-and Pr-based ZnO varitors. The non-linearity and characteristic behavior could be explained by considering the n-p-n hetero-structure at the grain boundary. SrCoO3 in the grain-boundary region should play crucial roles of not only the appearance of non-liner property but also the formation of different hetero-structure from double Schottky-barrier model on conventional varistors.

Effect of Si and Ba Addition on ZnO Grain Growth and Electrical Characteristics of Bi-Based ZnO Varistors

2013 ◽  
Vol 566 ◽  
pp. 219-222 ◽  
Author(s):  
Atsuko Kubota ◽  
Ai Fukumori ◽  
Yuuki Sato ◽  
Shinzo Yoshikado
Keyword(s):  
Grain Boundary ◽  
Grain Growth ◽  
Electrical Characteristics ◽  
Electrical Degradation ◽  
Zno Varistors

With the goal of fabricating varistors with low varistor voltages, we investigated the effects of adding Ba and Si to BiCoMn-added ZnO varistors on the varistor voltage and the resistance to electrical degradation. Ba2Mn3O8, which reduces the resistance to electrical degradation, was not formed at the grain boundary when Si was added. The resistance to electrical degradation was considerably improved by adding 0.10.15 mol% Si relative to samples to which small amounts of Sb had been added. The varistor voltage increased monotonically with increasing amount of added Si; it was approximately 36 V/mm for 0.1 mol% Si.

Thermodynamic and electrical characteristics of the twisted grain boundary phases of 4-n-dodecyloxy-4′-(cholesteryloxycarbonyl-1-butyloxy) chalcone

2010 ◽  
Vol 83 (12) ◽  
pp. 1049-1058 ◽  
Author(s):  
Vinay S. Pandey ◽  
R. Dhar ◽  
Awadhesh Kr. Singh ◽  
A.S. Achalkumar ◽  
C.V. Yelamaggad
Keyword(s):  
Grain Boundary ◽  
Electrical Characteristics

Effect of La2O3 on the Microstructure and Electrical Properties of (Ti,Sn)O2 Varistor Ceramics

2010 ◽  
Vol 152-153 ◽  
pp. 1391-1394
Author(s):  
Mao Hua Wang ◽  
Gang Li ◽  
Chao Yao
Keyword(s):  
Electrical Properties ◽  
Grain Boundary ◽  
Experimental Evidence ◽  
Low Voltage ◽  
Nonlinear Coefficient ◽  
Electrical Characteristics ◽  
Electrical Behavior ◽  
Optimal Doping ◽  
Nonlinear Properties ◽  
Ceramic Sintering

(Ti,Sn)O2 varistors doped with different amount of La2O3 were obtained by ceramic sintering processing at 1250 . The effect of La2O3 on the microstructure and nonlinear electrical behavior of the (Ti,Sn)O2 ceramics were investigated. The ceramics have nonlinear coefficients of α=6.2–8.5. Experimental evidence shows that small quantities of La2O3 improve the nonlinear properties of the samples significantly. It was found that an optimal doping composition of 1.0mol% La2O3 leads to a low breakdown voltage of 18.1V/mm, a high nonlinear coefficient of 8.5, which is consistent with the highest and narrowest grain boundary barriers of the ceramics.In view of these electrical characteristics, the (Ti,Sn)O2 varistors with 1.0mol% La2O3 ceramic is a viable candidate for low voltage varistor devices. The characteristics of the ceramics can be explained by the effect of the substitution of La3+ for Ti4+ or Sn4+.

Sign in / Sign up

Export Citation Format

Share Document