Dopant profile extraction by inverse modeling of scanning capacitance microscopy using peak dC/dV

Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004. ◽

10.1109/icsict.2004.1436664 ◽

2005 ◽

Author(s):

Y.D. Hong ◽

J. Yan ◽

K.M. Wong ◽

Y.T. Yeow ◽

W.K. Chim

Keyword(s):

Inverse Modeling ◽

Scanning Capacitance Microscopy ◽

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Quantitative two‐dimensional dopant profile measurement and inverse modeling by scanning capacitance microscopy

Applied Physics Letters ◽

10.1063/1.114207 ◽

1995 ◽

Vol 66 (3) ◽

pp. 344-346 ◽

Author(s):

Y. Huang ◽

C. C. Williams ◽

J. Slinkman

Keyword(s):

Inverse Modeling ◽

Profile Measurement ◽

Two Dimensional ◽

Scanning Capacitance Microscopy ◽

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Modeling mobility degradation in scanning capacitance microscopy for semiconductor dopant profile measurement

10.1117/12.522025 ◽

2004 ◽

Author(s):

Yang D. Hong ◽

Yew T. Yeow

Keyword(s):

Profile Measurement ◽

Scanning Capacitance Microscopy ◽

Mobility Degradation ◽

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Inverse modeling applied to Scanning Capacitance Microscopy for improved spatial resolution and accuracy

The 1998 international conference on characterization and metrology for ULSI technology ◽

10.1063/1.56917 ◽

1998 ◽

Author(s):

J. S. McMurray ◽

C. C. Williams

Keyword(s):

Spatial Resolution ◽

Inverse Modeling ◽

Scanning Capacitance Microscopy

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Dopant profile measurements in ion implanted 6H–SiC by scanning capacitance microscopy

Applied Surface Science ◽

10.1016/s0169-4332(01)00500-1 ◽

2001 ◽

Vol 184 (1-4) ◽

pp. 183-189 ◽

Author(s):

F. Giannazzo ◽

L. Calcagno ◽

F. Roccaforte ◽

P. Musumeci ◽

F. La Via ◽

...

Keyword(s):

Scanning Capacitance Microscopy ◽

Dopant Profile ◽

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Quantitative measurement of two-dimensional dopant profile by cross-sectional scanning capacitance microscopy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.589385 ◽

1997 ◽

Vol 15 (4) ◽

pp. 1011 ◽

Author(s):

J. S. McMurray

Keyword(s):

Quantitative Measurement ◽

Two Dimensional ◽

Cross Sectional ◽

Scanning Capacitance Microscopy ◽

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Modeling study of scanning capacitance microscopy measurement for p-n junction dopant profile extraction

2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) ◽

10.1109/icsict.2001.982075 ◽

2005 ◽

Author(s):

J. Yang ◽

Y.T. Yeow

Keyword(s):

Scanning Capacitance Microscopy ◽

Dopant Profile ◽

Microscopy Measurement ◽

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Measurement of Shallow Dopant Profile Using Scanning Capacitance Microscopy

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.3990 ◽

2004 ◽

Vol 43 (6B) ◽

pp. 3990-3994 ◽

Author(s):

W. Goragot ◽

M. Takai

Keyword(s):

Scanning Capacitance Microscopy ◽

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Measurement of shallow dopant profile using scanning capacitance microscopy

Digest of Papers Microprocesses and Nanotechnology 2003. 2003 International Microprocesses and Nanotechnology Conference ◽

10.1109/imnc.2003.1268768 ◽

2004 ◽

Author(s):

W. Goragot ◽

M. Takai

Keyword(s):

Scanning Capacitance Microscopy ◽

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Accurate transport modeling with 2D dopant profile effect in L/sub eff/ /spl sim/ 20 nm MOSFETs via inverse modeling

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. ◽

10.1109/sispad.2003.1233667 ◽

2003 ◽

Author(s):

T. Tanaka ◽

H. Kanata ◽

Y. Tagawa ◽

S. Satoh ◽

T. Sugii

Keyword(s):

Inverse Modeling ◽

Transport Modeling ◽

Dopant Profile ◽

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Channel dopant profile and Leff extraction of deep submicron MOSFETs by inverse modeling

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) ◽

10.1109/sispad.1996.865261 ◽

2005 ◽

Author(s):

K. Kai ◽

H. Hayashi ◽

S. Kuroda ◽

K. Fukuda ◽

K. Nishi

Keyword(s):

Inverse Modeling ◽

Deep Submicron ◽

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