Comparative study of triangular-shaped silicon nanowire transistors

2014 ◽  
Author(s):  
Yi-Bo Zhang ◽  
Lei Sun ◽  
Hao Xu ◽  
Jing-Wen Han ◽  
Yi Wang ◽  
...  
Keyword(s):  
Comparative Study ◽  
Silicon Nanowire ◽  
Nanowire Transistors

Comparative Study of $\hbox{1}/f$ Noise Degradation Caused by Fowler–Nordheim Tunneling Stress in Silicon Nanowire Transistors and FinFETs

2010 ◽  
Vol 57 (10) ◽  
pp. 2774-2779 ◽  
Author(s):  
Chengqing Wei ◽  
Yong-Zhong Xiong ◽  
Xing Zhou ◽  
Navab Singh ◽  
Xiao-Jun Yuan ◽  
...  
Keyword(s):  
Comparative Study ◽  
Silicon Nanowire ◽  
Nanowire Transistors ◽  
Nordheim Tunneling

Comparative Study of Silicon Nanowire Transistors with Triangular-Shaped Cross Sections

2014 ◽  
Author(s):  
Y.B. Zhang ◽  
L. Sun ◽  
H. Xu ◽  
Y.Q. Xia ◽  
J.W. Han ◽  
...  
Keyword(s):  
Comparative Study ◽  
Cross Sections ◽  
Silicon Nanowire ◽  
Nanowire Transistors

Comparative study of silicon nanowire transistors with triangular-shaped cross sections

2015 ◽  
Vol 54 (4S) ◽  
pp. 04DN01 ◽  
Author(s):  
Yi-Bo Zhang ◽  
Lei Sun ◽  
Hao Xu ◽  
Jing-Wen Han ◽  
Yi Wang ◽  
...  
Keyword(s):  
Comparative Study ◽  
Cross Sections ◽  
Silicon Nanowire ◽  
Nanowire Transistors

Steep Switching Characteristics of Partially Gated p+–n+–i–n+ Silicon-Nanowire Transistors

2021 ◽  
Vol 21 (8) ◽  
pp. 4330-4335
Author(s):  
Jaemin Son ◽  
Doohyeok Lim ◽  
Sangsig Kim
Keyword(s):  
Field Effect ◽  
Impact Ionization ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Operation Mode ◽  
Feedback Loops ◽  
Charge Carriers ◽  
Electrical Characteristics ◽  
Nanowire Transistors ◽  
Switching Characteristics

In this study, we examine the electrical characteristics of p+–n+–i–n+ silicon-nanowire field-effect transistors with partially gated channels. The silicon-nanowire field-effect transistors operate with barrier height modulation through positive feedback loops of charge carriers triggered by impact ionization. Our field-effect transistors exhibit outstanding switching characteristics, with an on current of ˜10−4 A, an on/off current ratio of ˜106, and a point subthreshold swing of ˜23 mV/dec. Moreover, the devices inhibit ambipolar characteristics because of the use of the partially gated structure and feature the p-channel operation mode.

Influence of discrete dopant on quantum transport in silicon nanowire transistors

2012 ◽  
Vol 70 ◽  
pp. 92-100 ◽  
Author(s):  
Nima Dehdashti Akhavan ◽  
Isabelle Ferain ◽  
Ran Yu ◽  
Pedram Razavi ◽  
Jean-Pierre Colinge
Keyword(s):  
Quantum Transport ◽  
Silicon Nanowire ◽  
Nanowire Transistors
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