Effect of one dimensional quantum structures on the thermoelectric figure of merit

Author(s):  
A. Casian ◽  
I. Sur ◽  
A. Sandu ◽  
H. Scherrer ◽  
S. Scherrer
1998 ◽  
Vol 545 ◽  
Author(s):  
X. Sun ◽  
Z. Zhang ◽  
G. Dresselhaus ◽  
M. S. Dresselhaus ◽  
J. Y. Ying ◽  
...  

AbstractBismuth as a semimetal is not a good thermoelectric material in bulk form because of the approximate cancellation between the electron and hole contributions. However, quantum confinement can be introduced by making Bi nanowires to move the lowest conduction subband edge up and the highest valence subband edge down to get a one-dimensional (1D) semiconductor at some critical wire diameter dc. A theoretical model based on the basic band structure of bulk Bi is developed to predict the dependence of these quantities on wire diameter and on the crystalline orientation of the bismuth nanowires. Numerical modeling is performed for trigonal, binary and bisectrix crystal orientations. By carefully tailoring the Bi wire diameter and carrier concentration, substantial enhancement in the thermoelectric figure of merit is expected for small nanowire diameters.


Author(s):  
Yushen Liu ◽  
Jinfu Feng ◽  
Xuefeng Wang

Based on first-principles methods, the authors of this paper investigate spin thermoelectric effects of one-dimensional spin-based devices consisting of zigzag-edged graphene nanoribbons (ZGNRs), carbon chains and graphene nanoflake. It is found that the spin-down transmission function is suppressed to zero, while the spin-up transmission function is about 0.25. Therefore, an ideal half-metallic property is achieved. In addition, the phonon thermal conductance is obviously smaller than the electronic thermal conductance. Meantime, the spin Seebeck effects are obviously enhanced at the low-temperature regime (about 80K), resulting in the fact that spin thermoelectric figure of merit can reach about 40. Moreover, the spin thermoelectric figure of merit is always larger than the corresponding charge thermoelectric figure of merit. Therefore, the study shows that they can be used to prepare the ideal thermospin devices.


Author(s):  
Enamul Haque

This article reports the extraordinary thermoelectric figure of merit (ZT) of NaBaBi: degenerate bands, instead of the valley degeneracy of Bi2Te3, highly non-parabolic bands, and low DOS near the Fermi level of NaBaBi lead to an extraordinary ZTisotropic ≈ 1.60 at 350 K.


2019 ◽  
Vol 34 (02) ◽  
pp. 2050019 ◽  
Author(s):  
Y. Zhang ◽  
M. M. Fan ◽  
C. C. Ruan ◽  
Y. W. Zhang ◽  
X.-J. Li ◽  
...  

[Formula: see text] ceramic samples have a structure similar to phonon glass electronic crystals, and their thermoelectric properties can be effectively adjusted through repeated grinding and sintering. The results show that multi-sintering can make their grain refined and increase their grain boundary, which will effectively increase density and phonon scattering. Finally, multi-sintering can reduce the resistivity and thermal conductivity, thus obviously improve thermoelectric figure of merit [Formula: see text] of [Formula: see text]. The optimum [Formula: see text] value of 0.26 is achieved at 923 K by the third sintered sample.


2020 ◽  
Vol 22 (4) ◽  
pp. 2081-2086 ◽  
Author(s):  
Taiki Tanishita ◽  
Koichiro Suekuni ◽  
Hirotaka Nishiate ◽  
Chul-Ho Lee ◽  
Michitaka Ohtaki

Co-substitution of Ge and P for Sb in Cu3SbS4 famatinite boosted dimensionless thermoelectric figure of merit.


2007 ◽  
Vol 534-536 ◽  
pp. 161-164 ◽  
Author(s):  
Taek Soo Kim ◽  
Byong Sun Chun

N-type Bi2Te3-Sb2Te3 solid solutions doped with CdCl2 was prepared by melt spinning, crushing and vacuum sintering processes. Microstructure, bending strength and thermoelectric property were investigated as a function of the doping quantity from 0.03wt.% to 0.10wt.% and sintering temperature from 400oC to 500oC, and finally compared with those of conventionally fabricated alloys. The alloy showed a good structural homogeneity as well as bending strength of 3.88Kgf/mm2. The highest thermoelectric figure of merit was obtained by doping 0.03wt.% and sintering at 500oC.


2001 ◽  
Vol 16 (3) ◽  
pp. 837-843 ◽  
Author(s):  
Xinfeng Tang ◽  
Lidong Chen ◽  
Takashi Goto ◽  
Toshio Hirai

Single-phase filled skutterudite compounds, CeyFexCo4−xSb12 (x = 0 to 3.0, y = 0 to 0.74), were synthesized by a melting method. The effects of Fe content and Ce filling fraction on the thermoelectric properties of CeyFexCo4−xSb12 were investigated. The lattice thermal conductivity of Ce-saturated CeyFexCo4−xSb12, y being at the maximum corresponding to x, decreased with increasing Fe content (x) and reached its minimum at about x = 1.5. When x was 1.5, lattice thermal conductivity decreased with increasing Ce filling fraction till y = 0.3 and then began to increase after reaching the minimum at y = 0.3. Hole concentration and electrical conductivity of Cey Fe1.5Co2.5Sb12 decreased with increasing Ce filling fraction. The Seebeck coefficient increased with increasing Ce filling fraction. The greatest dimensionless thermoelectric figure of merit T value of 1.1 was obtained at 750 K for the composition of Ce0.28Fe1.52Co2.48Sb12.


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