Thermoelectric Properties of n-Type 90% Bi2Te3+10%Bi2Se3 Thermoelectric Materials Produced by Melt Spinning Method and Sintering

2007 ◽  
Vol 534-536 ◽  
pp. 161-164 ◽  
Author(s):  
Taek Soo Kim ◽  
Byong Sun Chun
Keyword(s):  
Solid Solutions ◽  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
Melt Spinning ◽  
Bending Strength ◽  
Sintering Temperature ◽  
Thermoelectric Figure Of Merit ◽  
Vacuum Sintering ◽  
Thermoelectric Figure ◽  
Sintering Processes

N-type Bi2Te3-Sb2Te3 solid solutions doped with CdCl2 was prepared by melt spinning, crushing and vacuum sintering processes. Microstructure, bending strength and thermoelectric property were investigated as a function of the doping quantity from 0.03wt.% to 0.10wt.% and sintering temperature from 400oC to 500oC, and finally compared with those of conventionally fabricated alloys. The alloy showed a good structural homogeneity as well as bending strength of 3.88Kgf/mm2. The highest thermoelectric figure of merit was obtained by doping 0.03wt.% and sintering at 500oC.

scholarly journals Термоэлектрические свойства твердых растворов (CuInSe-=SUB=-2-=/SUB=-)-=SUB=-1-x-=/SUB=-(In-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=-)-=SUB=-x-=/SUB=-

2022 ◽  
Vol 56 (1) ◽  
pp. 38
Author(s):  
Ч.И. Абилов ◽  
М.Ш. Гасанова ◽  
Н.Т. Гусейнова ◽  
Э.К. Касумова
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Solid Solutions ◽  
Figure Of Merit ◽  
Charge Carriers ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Mobility Of Charge Carriers ◽  
Temperature Dependences ◽  
Thermoelectric Coefficient

The results of studying the temperature dependences of electrical conductivity, thermoelectric coefficient, Hall mobility of charge carriers, total and electronic thermal conductivity, as well as phonon thermal resistance of alloys of (CuInSe2)1-x(In2Te3)x solid solutions at x=0.005 and 0.0075 are presented. The values ​​of these parameters for certain temperatures were used to calculate the values ​​of the thermoelectric figure of merit of the indicated compositions. It turned out that as the temperature rises, the thermoelectric figure of merit tends to grow strongly, from which it can be concluded that these materials can be used in the manufacture of thermoelements.

Materials With Open Crystal Structure as Prospective Novel Thermoelectrics

1998 ◽  
Vol 545 ◽  
Author(s):  
Ctirad Uher ◽  
Jihui Yang ◽  
Siqing Hu
Keyword(s):  
Crystal Structure ◽  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
Optimal Transport ◽  
Heusler Alloys ◽  
Thermoelectric Figure Of Merit ◽  
Great Flexibility ◽  
Thermoelectric Figure ◽  
Guest Species ◽  
Filled Skutterudites

AbstractA useful approach to identify materials with high thermoelectric figure of merit is to search for solids that offer great flexibility to modify and tailor the structure so as to achieve the optimal transport behavior. Among the most promising novel thermoelectric materials are solids with “open crystal structure”. They may be typified by structures with unfilled cages, crystals with an empty atomic sublattice, and by a network of polyhedral cages enclosing guest species. In this paper we present our latest results concerning transport properties in the above classes of solids. Specifically, we focus on the filled skutterudites, half-Heusler alloys, and clathrates.

Enhancing the average thermoelectric figure of merit of elemental Te by suppressing grain boundary scattering

2020 ◽  
Vol 8 (17) ◽  
pp. 8455-8461 ◽  
Author(s):  
Yehao Wu ◽  
Feng Liu ◽  
Qi Zhang ◽  
Tiejun Zhu ◽  
Kaiyang Xia ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Grain Boundary ◽  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
Thermoelectric Figure Of Merit ◽  
Boundary Scattering ◽  
Thermoelectric Figure ◽  
Grain Boundary Scattering

Suppressed grain boundary scattering contributes to enhanced electrical conductivity and device zT in elemental Te based thermoelectric materials.

scholarly journals First-principles study of thermoelectric properties of Mg2Si–Mg2Pb semiconductor materials

RSC Advances ◽  
2018 ◽  
Vol 8 (31) ◽  
pp. 17168-17175 ◽  
Author(s):  
Tao Fan ◽  
Congwei Xie ◽  
Shiyao Wang ◽  
Artem R. Oganov ◽  
Laifei Cheng
Keyword(s):  
Thermoelectric Properties ◽  
Solid Solutions ◽  
First Principles ◽  
Figure Of Merit ◽  
Semiconductor Materials ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
First Principles Study

Thermoelectric figure of merit of Mg2Si1−xPbx solid solutions as a function of temperature.

Significantly enhanced thermoelectric figure of merit of p-type Mg3Sb2-based Zintl phase compounds via nanostructuring and employing high energy mechanical milling coupled with spark plasma sintering

2015 ◽  
Vol 3 (20) ◽  
pp. 10777-10786 ◽  
Author(s):  
A. Bhardwaj ◽  
N. S. Chauhan ◽  
D. K. Misra
Keyword(s):  
Thermoelectric Materials ◽  
Mechanical Milling ◽  
Figure Of Merit ◽  
High Energy ◽  
Thermoelectric Figure Of Merit ◽  
Zintl Phase ◽  
Thermoelectric Figure ◽  
Plasma Sintering ◽  
Spark Plasma ◽  
P Type

Several nanostructuring methods have been demonstrated to produce a variety of nanostructured materials, and these methods are well recognized as effective paradigms for improving the performance of thermoelectric materials.

Electrical Properties and Figures of Merit for New Chalcogenide-Based Thermoelectric Materials

1997 ◽  
Vol 478 ◽  
Author(s):  
Jon L. Schindler ◽  
Tim P. Hogan ◽  
Paul W. Brazis ◽  
Carl R. Kannewurf ◽  
Duck-Young Chung ◽  
...  
Keyword(s):  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Figures Of Merit ◽  
Lattice Symmetry ◽  
Thermoelectric Refrigeration ◽  
Polychalcogenide Flux ◽  
P Type

AbstractNew Bi-based chalcogenide compounds have been prepared using the polychalcogenide flux technique for crystal growth. These materials exhibit characteristics of good thermoelectric materials. Single crystals of the compound CsBi4Te6 have shown conductivity as high as 2440 S/cm with a p-type thermoelectric power of ≈ +110 μV/K at room temperature. A second compound, β-K2Bi8Se13 shows lower conductivity ≈ 240 S/cm, but a larger n-type thermopower ≈ −200 μV/K. Thermal transport measurements have been performed on hot-pressed pellets of these materials and the results show comparable or lower thermal conductivities than Bi2Te3. This improvement may reflect the reduced lattice symmetry of the new chalcogenide thermoelectrics. The thermoelectric figure of merit for CsBi4Te6 reaches ZT ≈ 0.32 at 260 K and for β-K2Bi8Se13 ZT ≈ 0.32 at room temperature, indicating that these compounds are viable candidates for thermoelectric refrigeration applications.

The Thermoelectric Process

1997 ◽  
Vol 478 ◽  
Author(s):  
C. B. Vining
Keyword(s):  
Thermodynamic Properties ◽  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Thermoelectric Conversion ◽  
New Approaches ◽  
Alternative Approach ◽  
Alternative Approaches

AbstractThe efficiency of thermoelectric technology today is limited by the properties of available thermoelectric materials and a wide variety of new approaches to developing better materials have recently been suggested. The key goal is to find a material with a large ZT, the dimensionless thermoelectric figure of merit. However, if an analogy is drawn between thermoelectric technology and gas-cycle engines then selecting different materials for the thermoelements is analogous to selecting a different working gas for the mechanical engine. And an attempt to improve ZT is analogous to an attempt to improve certain thermodynamic properties of the working-gas. An alternative approach is to focus on the thermoelectric process itself (rather than on ZT), which is analogous to considering alternate cycles such as Stirling vs. Brayton vs. Rankine etc., rather than ‘merely’ considering alternative ‘gases’. Focusing on the process is a radically different approach compared to previous studies focusing on ZT. Aspects of the thermoelectric process and alternative approaches to efficient thermoelectric conversion are discussed.

Melt Spinning Preparation of Bismuth Telluride and Partially Alloying with IV-VI Compounds for Thermoelectric Application

2007 ◽  
Vol 1044 ◽  
Author(s):  
Harald Boettner ◽  
Dirk Ebling ◽  
Alexandre Jacquot ◽  
Uta Kühn ◽  
Jürgen Schmidt ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Melt Spinning ◽  
Thermoelectric Figure Of Merit ◽  
Bulk Materials ◽  
Thermoelectric Figure ◽  
Post Annealing ◽  
Melt Spin ◽  
Melt Spinning Technique ◽  
Thermoelectric Application

AbstractThe melt spinning technique (MST) combined with post annealing processes is evaluated for the development of thermoelectric nanocomposites. The evaluated ones are based on two components almost immiscible in solid state but with crystallographic correlation. One is taken from the V-VI-components system and the other one from the IV-VI-components system. This concept was applied to p-(Bi0,2Sb0,8)2Te3 and to p-[(Bi0,2Sb0,8)2Te3]1-xPbTex composites. MST samples of all types were characterised for some structural and thermoelectric properties. All V-VI materials are clearly textured after MST and show no deterioration concerning the thermoelectric properties even after subsequent annealing processes. Structural analysis of p-[(Bi0,2Sb0,8)2Te3]1-xPbTex composites gave significant hints for oriented precipitates of a IV-VI-rich phase incorporated into the V-VI-rich matrix. The thermoelectric figure of merit of the evaluated composites could be enhanced by suitable annealing procedures of both the quenched bulk materials and the melt spin material.

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