High thermoelectric figure of merit and thermopower in layered perovskite oxides

Nb-content dependence of the thermoelectric figure of merit, ZT of SrTiO3 at high-temperature (1000 K) is clarified using heavily Nb-doped SrTiO3 epitaxial films, which were grown on (100)-face of LaAlO3 single crystal substrates by a pulsed-laser deposition. Carrier concentration, Hall mobility, Seebeck coefficient, and thermal conductivity of Nb-doped SrTiO3 epitaxial films were experimentally evaluated at 1000 K with an aid of theoretical analysis. ZT reached 0.37 (20%-Nb-doped SrTiO3 epitaxial film) at 1000 K, which is the largest value among n-type oxide semiconductors ever reported.

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Extraordinary thermoelectric performance of NaBaBi with degenerate and highly non-parabolic bands compared to LiBaSb and Bi2Te3

Sustainable Energy & Fuels ◽

10.1039/d0se01817a ◽

2021 ◽

Author(s):

Enamul Haque

Keyword(s):

Fermi Level ◽

Figure Of Merit ◽

Thermoelectric Performance ◽

Thermoelectric Figure Of Merit ◽

Thermoelectric Figure

This article reports the extraordinary thermoelectric figure of merit (ZT) of NaBaBi: degenerate bands, instead of the valley degeneracy of Bi2Te3, highly non-parabolic bands, and low DOS near the Fermi level of NaBaBi lead to an extraordinary ZTisotropic ≈ 1.60 at 350 K.

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Influence of multi-sintering on the thermoelectric properties of Bi2Sr2Co2Oy ceramics

Modern Physics Letters B ◽

10.1142/s0217984920500190 ◽

2019 ◽

Vol 34 (02) ◽

pp. 2050019 ◽

Cited By ~ 2

Author(s):

Y. Zhang ◽

M. M. Fan ◽

C. C. Ruan ◽

Y. W. Zhang ◽

X.-J. Li ◽

...

Keyword(s):

Thermal Conductivity ◽

Thermoelectric Properties ◽

Figure Of Merit ◽

Phonon Scattering ◽

Sintered Sample ◽

Thermoelectric Figure Of Merit ◽

Thermoelectric Figure ◽

The Third ◽

Ceramic Samples ◽

Optimum Formula

[Formula: see text] ceramic samples have a structure similar to phonon glass electronic crystals, and their thermoelectric properties can be effectively adjusted through repeated grinding and sintering. The results show that multi-sintering can make their grain refined and increase their grain boundary, which will effectively increase density and phonon scattering. Finally, multi-sintering can reduce the resistivity and thermal conductivity, thus obviously improve thermoelectric figure of merit [Formula: see text] of [Formula: see text]. The optimum [Formula: see text] value of 0.26 is achieved at 923 K by the third sintered sample.

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A strategy for boosting the thermoelectric performance of famatinite Cu3SbS4

Physical Chemistry Chemical Physics ◽

10.1039/c9cp06233e ◽

2020 ◽

Vol 22 (4) ◽

pp. 2081-2086 ◽

Cited By ~ 3

Author(s):

Taiki Tanishita ◽

Koichiro Suekuni ◽

Hirotaka Nishiate ◽

Chul-Ho Lee ◽

Michitaka Ohtaki

Keyword(s):

Figure Of Merit ◽

Thermoelectric Performance ◽

Thermoelectric Figure Of Merit ◽

Thermoelectric Figure ◽

Co Substitution

Co-substitution of Ge and P for Sb in Cu3SbS4 famatinite boosted dimensionless thermoelectric figure of merit.

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Thermoelectric Properties of n-Type 90% Bi2Te3+10%Bi2Se3 Thermoelectric Materials Produced by Melt Spinning Method and Sintering

Materials Science Forum ◽

10.4028/www.scientific.net/msf.534-536.161 ◽

2007 ◽

Vol 534-536 ◽

pp. 161-164 ◽

Cited By ~ 3

Author(s):

Taek Soo Kim ◽

Byong Sun Chun

Keyword(s):

Solid Solutions ◽

Thermoelectric Materials ◽

Figure Of Merit ◽

Melt Spinning ◽

Bending Strength ◽

Sintering Temperature ◽

Thermoelectric Figure Of Merit ◽

Vacuum Sintering ◽

Thermoelectric Figure ◽

Sintering Processes

N-type Bi2Te3-Sb2Te3 solid solutions doped with CdCl2 was prepared by melt spinning, crushing and vacuum sintering processes. Microstructure, bending strength and thermoelectric property were investigated as a function of the doping quantity from 0.03wt.% to 0.10wt.% and sintering temperature from 400oC to 500oC, and finally compared with those of conventionally fabricated alloys. The alloy showed a good structural homogeneity as well as bending strength of 3.88Kgf/mm2. The highest thermoelectric figure of merit was obtained by doping 0.03wt.% and sintering at 500oC.

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Effects of Ce filling fraction and Fe content on the thermoelectric properties of Co-rich CeyFexCo4−xSb12

Journal of Materials Research ◽

10.1557/jmr.2001.0109 ◽

2001 ◽

Vol 16 (3) ◽

pp. 837-843 ◽

Cited By ~ 66

Author(s):

Xinfeng Tang ◽

Lidong Chen ◽

Takashi Goto ◽

Toshio Hirai

Keyword(s):

Thermal Conductivity ◽

Thermoelectric Properties ◽

Figure Of Merit ◽

Single Phase ◽

Lattice Thermal Conductivity ◽

Hole Concentration ◽

Thermoelectric Figure Of Merit ◽

Thermoelectric Figure ◽

Filling Fraction ◽

Fe Content

Single-phase filled skutterudite compounds, CeyFexCo4−xSb12 (x = 0 to 3.0, y = 0 to 0.74), were synthesized by a melting method. The effects of Fe content and Ce filling fraction on the thermoelectric properties of CeyFexCo4−xSb12 were investigated. The lattice thermal conductivity of Ce-saturated CeyFexCo4−xSb12, y being at the maximum corresponding to x, decreased with increasing Fe content (x) and reached its minimum at about x = 1.5. When x was 1.5, lattice thermal conductivity decreased with increasing Ce filling fraction till y = 0.3 and then began to increase after reaching the minimum at y = 0.3. Hole concentration and electrical conductivity of Cey Fe1.5Co2.5Sb12 decreased with increasing Ce filling fraction. The Seebeck coefficient increased with increasing Ce filling fraction. The greatest dimensionless thermoelectric figure of merit T value of 1.1 was obtained at 750 K for the composition of Ce0.28Fe1.52Co2.48Sb12.

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High-Thermoelectric Figure of Merit Realized in p-Type Half-Heusler Compounds: ZrCoSnxSb1-x

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.l673 ◽

2007 ◽

Vol 46 (No. 27) ◽

pp. L673-L675 ◽

Cited By ~ 58

Author(s):

Takeyuki Sekimoto ◽

Ken Kurosaki ◽

Hiroaki Muta ◽

Shinsuke Yamanaka

Keyword(s):

Figure Of Merit ◽

Thermoelectric Figure Of Merit ◽

Heusler Compounds ◽

Thermoelectric Figure ◽

P Type

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Strain effect analysis on the thermoelectric figure of merit inn-type Si/Ge nanocomposites

Journal of Applied Physics ◽

10.1063/1.3693307 ◽

2012 ◽

Vol 111 (5) ◽

pp. 054318 ◽

Cited By ~ 7

Author(s):

Y. Xu ◽

G. Li

Keyword(s):

Figure Of Merit ◽

Strain Effect ◽

Thermoelectric Figure Of Merit ◽

Thermoelectric Figure ◽

Effect Analysis

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Thermoelectric Properties of Semiconducting Intermetallic Compounds: FeGa3and RuGa3

MRS Proceedings ◽

10.1557/proc-793-s8.38 ◽

2003 ◽

Vol 793 ◽

Author(s):

Y. Amagai ◽

A. Yamamoto ◽

C. H. Lee ◽

H. Takazawa ◽

T. Noguchi ◽

...

Keyword(s):

Thermal Conductivity ◽

Electrical Resistivity ◽

High Temperature ◽

Seebeck Coefficient ◽

Transport Properties ◽

Figure Of Merit ◽

Room Temperature ◽

Thermoelectric Figure Of Merit ◽

Thermoelectric Figure ◽

High Seebeck Coefficient

ABSTRACTWe report transport properties of polycrystalline TMGa3(TM = Fe and Ru) compounds in the temperature range 313K<T<973K. These compounds exhibit semiconductorlike behavior with relatively high Seebeck coefficient, electrical resistivity, and Hall carrier concentrations at room temperature in the range of 1017- 1018cm−3. Seebeck coefficient measurements reveal that FeGa3isn-type material, while the Seebeck coefficient of RuGa3changes signs rapidly from large positive values to large negative values around 450K. The thermal conductivity of these compounds is estimated to be 3.5Wm−1K−1at room temperature and decreased to 2.5Wm−1K−1for FeGa3and 2.0Wm−1K−1for RuGa3at high temperature. The resulting thermoelectric figure of merit,ZT, at 945K for RuGa3reaches 0.18.

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