Modeling of boron, phosphorus, and arsenic implants into single-crystal silicon over a wide energy range (few keV to several MeV)

2002 ◽  
Author(s):  
S.J. Morris ◽  
B. Obradovic ◽  
S.-H. Yang ◽  
A.F. Tasch
Keyword(s):  
Energy Range ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Wide Energy Range ◽  
Crystal Silicon ◽  
Wide Energy

OPTICAL REFLECTIVITY STUDY ON THE SINGLE CRYSTALLINE (La1−xSrx)2CuO4

1988 ◽  
Vol 01 (09n10) ◽  
pp. 353-361 ◽  
Author(s):  
S. TAJIMA ◽  
S. UCHIDA ◽  
H. ISHII ◽  
H. TAKAGI ◽  
S. TANAKA ◽  
...  
Keyword(s):  
Infrared Spectrum ◽  
Energy Range ◽  
Single Crystal ◽  
Phonon Spectrum ◽  
Wide Energy Range ◽  
Phonon Modes ◽  
Single Crystalline ◽  
Optical Reflectivity ◽  
Reflectivity Spectra ◽  
Wide Energy

The optical reflectivity spectra were measured for single crystalline La2CuO4 and La1.8Sr0.2CuO4 over a wide energy range from 12meV to 3eV. Comparing the phonon spectrum of single crystal with that of polycrystal, the observed four phonon modes can be classified into the two—the vibrations parallel and perpendicular to the c-axis. The infrared spectrum of La1.8Sr0.2CuO4 shows the normal Drude-type behavior without any extra excitation.

Hafnium-related Photoluminescence in Single Crystal Silicon

2005 ◽  
Vol 866 ◽  
Author(s):  
R. Sachdeva ◽  
A. A. Istratov ◽  
Wei Shan ◽  
P. N. K. Deenapanray ◽  
E.R. Weber
Keyword(s):  
Hydrostatic Pressure ◽  
Energy Range ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Sample Temperature ◽  
Pressure Measurements ◽  
Temperature Dependent ◽  
Photoluminescence Band ◽  
Crystal Silicon ◽  
Cooling Conditions

AbstractA new photoluminescence (PL) band in the energy range of 700 meV to 950 meV associated with hafnium implanted in silicon is reported. A shift in the position of photoluminescence peaks observed on the samples implanted with two different isotopes of Hf confirms the Hfrelated origin of the observed photoluminescence band. Activation of the Hf-optical centers requires a 1000°C anneal step. The intensity of the PL lines depends on the cooling conditions. The spectrum consists of five peaks in the rapidly quenched sample as opposed to twenty one in the slowly cooled sample. Temperature dependent PL measurements and hydrostatic pressure measurements were performed to identify their nature.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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