Low-distortion GaAs-based field effect transistors with InGaP channel layer for high-voltage operation

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H. Takahashi ◽  
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High Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
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Nanomembrane β-Ga2O3 high-voltage field effect transistors

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Huili Grace Xing ◽  
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Vol 80 (7) ◽  
pp. 69-85 ◽  
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Vitaly Z. Zubialevich ◽  
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High Voltage ◽  
Simulation Study ◽  
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Gan Nanowire
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