A study of subband structure and transport of two-dimensional holes in strained-Si p-MOSFETs using full-band modeling

Author(s):  
H. Nakatsuji ◽  
Y. Kamakura ◽  
K. Taniguchi
2003 ◽  
Vol 2 (2-4) ◽  
pp. 109-112 ◽  
Author(s):  
Hiroshi Nakatsuji ◽  
Yoshinari Kamakura ◽  
Kenji Taniguchi

1998 ◽  
Vol 58 (15) ◽  
pp. 9941-9948 ◽  
Author(s):  
R. Oberhuber ◽  
G. Zandler ◽  
P. Vogl

2021 ◽  
pp. 2150170
Author(s):  
Hui Yang ◽  
Guo-Hong Yun ◽  
Yong-Jun Cao

Two-dimensional (2D) magnonic crystal (MC) with an asymmetric complex basis is proposed in this paper, and its band structures are calculated in the whole area of the first Brillouin zone (BZ). This kind of MCs is composed of two different atoms in the unit cell, and the symmetry of the unit cell is broken due to changes in the position of the second atom, so the irreducible part of the BZ is no longer the small area [Formula: see text] for square lattice, and it must be expanded to the whole first BZ. Only by investigating the whole first BZ, can we get the true full band-gap for this kind of MCs.


1986 ◽  
Vol 134 (2) ◽  
pp. K149-K153 ◽  
Author(s):  
G. Gobsch ◽  
J.-P. Zöllner ◽  
G. Paasch

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