Performance comparisons of tunneling field-effect transistors made of InSb, Carbon, and GaSb-InAs broken gap heterostructures
2018 ◽
Vol 95
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pp. 51-58
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2014 ◽
Vol 61
(6)
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pp. 1907-1913
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2021 ◽
Vol 21
(8)
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pp. 4310-4314