Weighted electrode configuration for electromechanical coupling enhancement in a new class of micromachined Lithium Niobate laterally vibrating resonators

Author(s):  
Songbin Gong ◽  
Gianluca Piazza
2021 ◽  
pp. 1-1
Author(s):  
Jinbo Wu ◽  
Shibin Zhang ◽  
Hongyan Zhou ◽  
Pengcheng Zheng ◽  
Liping Zhanga ◽  
...  

2021 ◽  
Vol 8 ◽  
Author(s):  
Rui Ma ◽  
Weiguo Liu ◽  
Xueping Sun ◽  
Shun Zhou

This paper studied the manufacturing process of Piezoelectric-on-Silicon (POS) substrate which integrates 128° Y–X Lithium niobate thin film and silicon wafer using Smart-Cut technology. The blistering and exfoliation processes of the He as-implanted LN crystal under different annealing temperatures are observed by the in-situ method. Unlike the conventional polishing process, the stripping mechanism of the Lithium niobate thin film is changed by controlling annealing temperature, which can improve the surface morphology of the peeling lithium niobate thin film. We prepared the 128° Y–X POS substrate with high single-crystal Lithium niobate thin film and surface roughness of 3.91 nm through Benzocyclobutene bonding. After simulating the surface acoustic wave (SAW) characteristics of the POS substrate, the results demonstrate that the Benzocyclobutene layer not only performs as a bonding layer but also can couple more vibrations into the LN thin film. The electromechanical coupling coefficient of the POS substrate is up to 7.59% in the Rayleigh mode when hLN/λ is 0.3 and hBCB/λ is 0.1. Therefore, as a high-performance substrate material, the POS substrate has proved to be an efficient method to miniaturize and integrate the SAW sensor.


Sensors ◽  
2020 ◽  
Vol 21 (1) ◽  
pp. 149
Author(s):  
Savannah R. Eisner ◽  
Cailin A. Chapin ◽  
Ruochen Lu ◽  
Yansong Yang ◽  
Songbin Gong ◽  
...  

This paper reports the high-temperature characteristics of a laterally vibrating piezoelectric lithium niobate (LiNbO3; LN) MEMS resonator array up to 500 °C in air. After a high-temperature burn-in treatment, device quality factor (Q) was enhanced to 508 and the resonance shifted to a lower frequency and remained stable up to 500 °C. During subsequent in situ high-temperature testing, the resonant frequencies of two coupled shear horizontal (SH0) modes in the array were 87.36 MHz and 87.21 MHz at 25 °C and 84.56 MHz and 84.39 MHz at 500 °C, correspondingly, representing a −3% shift in frequency over the temperature range. Upon cooling to room temperature, the resonant frequency returned to 87.36 MHz, demonstrating the recoverability of device performance. The first- and second-order temperature coefficient of frequency (TCF) were found to be −95.27 ppm/°C and 57.5 ppb/°C2 for resonant mode A, and −95.43 ppm/°C and 55.8 ppb/°C2 for resonant mode B, respectively. The temperature-dependent quality factor and electromechanical coupling coefficient (kt2) were extracted and are reported. Device Q decreased to 334 and total kt2 increased to 12.40% after high-temperature exposure. This work supports the use of piezoelectric LN as a material platform for harsh environment radio-frequency (RF) resonant sensors (e.g., temperature and infrared) incorporated with high coupling acoustic readout.


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